Electrolyte thin film (AgI)x(AgPO3)1-x based on amorphous solid and its preparing method
A solid electrolyte and thin film technology, applied in the field of microelectronic materials, can solve the problems of poor reliability, inability to achieve fast reading and writing, and not yet widely used
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0039] Embodiment 1. Preparation of amorphous solid electrolyte film (AgI) 0.5 (AgPO 3 ) 0.5 , where AgI and AgPO 3 The molar ratio of the substances is 1:1;
Embodiment 2
[0040] Embodiment 2. Amorphous solid electrolyte film (AgI) 0.5 (AgPO 3 ) 0.5 The preparation method, its preparation steps are as follows:
[0041] a) (AgI) 0.5 (AgPO 3 ) 0.5 Glass target 4 is made of AgI, AgNO 3 , (NH 4 ) 2 HPO 4 Prepared by powder smelting; the stoichiometric ratio of the above powders (33.3mol%AgI, 33.3mol%AgNO 3 and 33.3mol% (NH 4 ) 2 HPO 4 ) mixture; pour the melt into the copper mold, cool and solidify to form (AgI) 0.5 (AgPO 3 ) 0.5 Glass target 4;
[0042] b) Will (AgI) 0.5 (AgPO 3 ) 0.5 The glass target 4 is fixed in the pulse laser deposition film forming system (such as figure 1 shown), the substrate 1 is fixed on the substrate table 8, and they are all placed in the growth chamber 6 of the pulsed laser deposition film-making system;
[0043] c) Use a vacuum pump to evacuate the growth chamber 6 to 1.0×10 through the interface valve 7 of the mechanical pump and the molecular pump -3 Below Pa;
Embodiment 3
[0046] Example 3. Using an amorphous solid electrolyte (AgI) 0.5 (AgPO 3 ) 0.5 The preparation method of the non-volatile phase-change memory element, its preparation steps are as follows:
[0047] 1) deposit non-reactive electrode film 10 with magnetron sputtering method on silicon wafer substrate 9, its material is platinum, and the thickness of non-reactive electrode film 10 is 200 nanometers;
[0048] 2) Utilize the radio frequency magnetron sputtering method to deposit a layer of insulating layer 11 on the non-reactive electrode film 10, the material of the insulating layer is silicon dioxide, and its thickness is 150 nanometers;
[0049] 3) Cover the substrate with a metal mask plate engraved with holes with a diameter of 0.4 mm, and process micro-holes with a diameter of 1000 nanometers in the insulating layer 11 by using the focused particle beam etching method to expose the lower non-reactive electrode film 10;
[0050] 4) Put the substrate covered with the mask i...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com