72results about How to "High region" patented technology

A semiconductor light emitting element includes an conductive oxide film containing at least one element selected from the group consisting of zinc, indium, tin, and magnesium that is electrically connected to the semiconductor layer. The conductive oxide film includes a plurality of voids in the vicinity of the interface with the semiconductor layer.

An illumination-component extractor (illumination component extraction section) extracts an illumination component Log from a picked-up image (original image) picked up an image sensor having a photoelectric conversion characteristic which comprises a linear characteristic region and a logarithmic characteristic region. A reflectance component determiner (subtraction section) extracts a reflectance component Log(R1). A compressor (illumination component compression section) subjects at least the illumination component Log of the logarithmic characteristic region to DR compression. Image production mean (image production section) produces a new image (synthetic image) based on the DR-compress illumination component and the reflectance component.

Disclosed is a system, method, and program for mapping logical addresses to physical sectors on a storage device including at least one storage medium surface. A determination is made of logical addresses that are specified to be stored in a high throughput region on one storage medium surface. At least two read/write heads operate on the storage medium surface including the high throughput region to increase performance of access operations in the high throughput region. A mapping is generated of the determined logical addresses to the high throughput region. The logical addresses mapped to the high throughput region are capable of being non-contiguous.

A case for an HVAC system has at least two molded shells joined together along a parting line to enclose a heat exchanger chamber, a blower chamber, and a diffuser section. The diffuser section includes a floor, a ceiling, an outer wall, and an inner wall around a longitudinal axis. The walls provide an airflow path through the diffuser between the blower and heat exchanger chamber, and the airflow path makes a substantially right angle turn into the heat exchanger chamber which results in a tendency to create a high flow region at the outer wall because of centrifugal effects. The outer wall is shaped to form a wall guide partially projecting into the airflow path in the diffuser, wherein the wall guide has an upstream encroaching surface and a downstream retreating surface so that a portion of the guided air is directed from the outer wall toward the inner wall. At least one of the floor or the ceiling includes a vane projecting into and deflecting the guided air in the airflow path, wherein the vane has an upstream end proximate to the wall guide and a downstream end extending toward the heat exchanger chamber for initiating a portion of the substantially right angle turn for a portion of the airflow.

A reflection-type exposure mask includes a multilayer reflective film in a main surface and serving as a high reflective region to an exposure light, and an absorber pattern on the multilayer reflective film and serving as a low reflective region to the exposure light, wherein a phase difference between reflection lights of the exposure light from the multilayer reflective film and the absorber pattern is in a range of 180°±10°, and the absorber pattern includes first and second linear patterns having longitudinal directions intersecting at right angles, contrast values of optical images of the first and second linear patterns formed on a wafer is to be 0.6 or more when one of the longitudinal directions of the first and second patterns agree with an incident direction of the exposure light to the main surface viewed from above the main surface.

A hydrogen sensor includes a solid electrolyte made of a barium cerium oxide, and a first electrode and a second electrode that are formed on the surface of the solid electrolyte. The first and the second electrodes are made of a material having a catalytic effect with respect to an oxidation reaction of hydrogen and are made of the same material. Thus, the hydrogen sensor can be inexpensive and has good hydrogen selectivity and responsiveness to detection, and thus it is possible to measure hydrogen in a high concentration region.

An object is to provide a novel manufacturing method of a semiconductor substrate containing silicon carbide, and another object is to provide a semiconductor device using silicon carbide. A semiconductor substrate is manufactured through the steps of: adding ions to a silicon carbide substrate to form an embrittlement region in the silicon carbide substrate; bonding the silicon carbide substrate to a base substrate with insulating layers interposed therebetween; heating the silicon carbide substrate and separating the silicon carbide substrate at the embrittlement region to form a silicon carbide layer over the base substrate with the insulating layers interposed between therebetween; and performing heat treatment on the silicon carbide layer at a temperature of 1000° C. to 1300° C. to reduce defects of the silicon carbide layer. A semiconductor device is manufactured using the semiconductor substrate formed as described above.

A MOS transistor having a recessed channel region is provided. A MOS transistor includes a source region and a drain region disposed in an active region of a semiconductor substrate and spaced apart from each other. A gate trench structure is disposed in the active region between the source and drain regions. A gate electrode is disposed in the gate trench structure. A gate dielectric layer is interposed between the gate trench structure and the gate electrode. A semiconductor region is disposed between the gate trench structure and the gate dielectric layer. The semiconductor region is formed of a different material from the active region. A method of fabricating the MOS transistor having a recessed channel region is also provided.

Provided is a hot-forged 6xxx-series aluminum alloy having excellent corrosion resistance and still having both high strength and good ductility. A forged 6xxx-series aluminum alloy having a specific chemical composition after solution treatment is further subjected to warm working to introduce dislocations into the forged aluminum alloy microstructure. This allows the forged aluminum alloy after artificial aging to have a microstructure which has a high dislocation density, includes a large proportion of small angle grain boundaries, and has a high average number density of precipitates. Thus, the resulting forged aluminum alloy has a 0.2% yield strength of 400 MPa or more and an elongation of 10% or more and combines properties necessary for suspension parts.

The invention discloses a RF coaxial connector, which includes a socket and an adapter. The socket includes an outer conductor and a center conductor. The adapter includes a plug capable of being inserted into the socket. The adapter also includes an outer conductor and a center conductor that can be in contact with the outer conductor and the center conductor of the socket, respectively. A dumbbell-shaped first insulating body is disposed inside the plug of the adapter and filled between the outer conductor and the center conductor of the adapter. The first insulating body has a middle portion narrower than two end portions thereof such that an annular gap is formed between the middle portion of the first insulating body and the outer conductor of the adapter, thereby forming different impedance regions at the connection regions of the plug and the socket. Therefore, a high impedance region and a low impedance region can compensate each other so as to decrease the adverse effect of the high impedance region on the connector performance and improve electrical and RF performance of the product. Compared with the prior art, the connector of the present invention allows a larger axial offset.

A flat metal particle-containing composition including flat metal particles and a heterocyclic ring compound, wherein the heterocyclic ring compound has a silver interaction potential EAg which is lower than −1 mV.