46results about How to "High process control precision" patented technology

An automatic temperature-control and rolling-control device for a reversible type rolling mill belongs to the field of metallurgy and comprises a temperature sensor, a displacement sensor, a pressure sensor, an industrial control computer, an analogue value input card, a digital quantity input card and a digital quantity output card, wherein the output of the temperature sensor, the output of the displacement sensor and the output of the pressure sensor are all connected with the input of the analogue value input card; the output of the analogue value input card is connected with the input of the industrial control computer; the output of the industrial control computer is connected with the input of the digital quantity output card; the output of the digital quantity output card is connected with a control system of the rolling mill; the output of a pass signal processor of the rolling mill is connected with the input of the digital quantity input card; the output of the digital quantity input card is connected with the input of the industrial control computer. According to the invention, the control precision of the technology that the rolling mill performs the temperature control and rolling control to steel plates is improved, and the automation of the temperature control and rolling control of the steel plates is realized.

The invention relates to an infrared focal plane detector, a CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared focal plane detector are both prepared by using a CMOS process, in the infrared focal plane detector, a first columnar structure is located between a reflecting layer and a beam structure, a second columnar structure is located between an absorption plate and the beam structure, the first columnar structure and the second columnar structure are solid columnar structures, and the infrared focal plane detector further comprises a metamaterial structure and / or a polarization structure. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared focal plane detector are solved, the structural stability of the infrared focal plane detector is improved, the area of the absorption plate is increased, the infrared detection sensitivity of the infrared focal plane detector is improved, the absorption rate of the infrared focal plane detector to incident infrared electromagnetic waves is improved, the performance of the infrared focal plane detector is optimized, and the difficulty of optical design of the infrared focal plane detector is reduced.

The present invention relates to a CMOS infrared microbridge detector. A CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared micro-bridge detector are both prepared by using a CMOS process, in the infrared micro-bridge detector, a first columnar structure is located between a reflecting layer and a beam structure, a second columnar structure is located between an absorption plate and the beam structure, the first columnar structure and the second columnar structure are hollow columnar structures, the absorption plate and the beam structure comprise electrode layers and at least two dielectric layers, and the first columnar structure and the second columnar structure at least comprise electrode layers. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared focal plane detector are solved, the thermal conductance of the first columnar structure and the second columnar structure is reduced, the area of the absorption plate is increased, and the infrared detection sensitivity of the infrared micro-bridge detector is improved.

The invention relates to an uncooled tuning type infrared detector, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS infrared sensing structure is directly prepared on the CMOS measuring circuit system, and at least one patterned metal interconnection layer is arranged between a reflecting layer and a suspended micro-bridge structure. The patterned metal interconnection layer and the reflecting layer are electrically insulated, and the patterned metal interconnection layer is used for adjusting a resonance mode of the infrared detector. According to the detector, problems of low performance, low pixel scale, low yield, poor consistency and the like of a traditional MEMS process infrared detector are solved, the infrared absorption rate of the infrared detector is effectively improved, the infrared absorption spectrum of the infrared detector is widened, and the infrared absorption spectrum of the infrared detector is increased.

The invention discloses an industrial conductive material and a preparation method thereof. The industrial conductive material is prepared by the following main materials according to weight ratio: 4.5-6 parts of electric calcined anthracite, 2-4 parts of calcined petroleum coke, 1.2-1.5 parts of resin modified bitumen, 0.03-0.06 parts of attapulgite, 0.03-0.12 parts of thorium dioxide, and 1.8-2.0 parts of intermediate-temperature coal bitumen powder. The industrial conductive material according to the invention has advantages of high industrial control precision, high strength, high resistivity, high heat conductivity, high sintering performance, high thermal shock resistance, high oxidation resistance, simple manufacture process and relatively low production cost.

The invention relates to an infrared detector mirror image pixel and an infrared detector based on a CMOS process, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure, the CMOS measurement circuit system and the CMOS infrared sensing structure are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, the reflecting layer, the infrared conversion structure and the columnar structures are located on the CMOS measurement circuit system, the columnar structures are located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; and the reflecting plate arranged on the same layer as the supporting base is etched. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

The invention relates to a method and a device for controlling the winding length of a motor stator coil type coil, belonging to the technical field of motors. The method for controlling the winding length of a motor stator coil type coil comprises the following steps: firstly, sequentially hoisting copper disc leads on a lead bracket; fixedly collecting the copper leads together in parallel by acollector and adjusting the tension of the leads; fixing a winding die on a winding machine, retaining 1-3 mm of copper lead rebound at the end parts of lead noses by the winding die and controlling the speed of the winding machine to wind the coil. The winding die fixed on the winding machine of the device for controlling the winding length of the motor stator coil type coil has an adjustable structure, and a die core is arranged between an inner blocking plate and an outer blocking plate; an inner die core is designed into two sections; the inner die core at the lead end is fixed on the outer blocking plate, and the inner die core subsection at the other end and the outer blocking plate are made into a structure with a guide rail. The invention has the advantages of simple and convenient process, high control precision and production efficiency, good coil winding quality, simple die structure, and the like.

The invention relates to a single-layer infrared focal plane detector, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared focal plane detector are both prepared by using a CMOS process, and the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process. The columnar structure in the CMOS infrared sensing structure comprises at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure, the sacrificial layer is used for enabling the CMOS infrared sensing structure to form a hollow structure, the material for forming the sacrificial layer comprises at least one of silicon, germanium or germanium-silicon, the sacrificial layer is corroded by adopting an etching gas and adopting a post-CMOS process. The etching gas comprises at least one of xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride and chlorofluorohydrocarbon. According to the technical scheme, the problems that a traditional MEMS technology infrared focal plane detector is low in performance, low in pixel scale, low in yield, poor in consistency and the like are solved.

The invention relates to an infrared detector based on a CMOS process, a CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS manufacturing process of the CMOS infrared sensing structure comprises a metal interconnection process, a through hole process and an RDL process, the CMOS infrared sensing structure comprises at least two metal interconnection layers, at least two dielectric layers and a plurality of interconnection through holes, the dielectric layers at least comprise a sacrificial layer and a heat-sensitive dielectric layer, and the heat-sensitive dielectric layer comprises a heat-sensitive material of which the resistance temperature coefficient is greater than a set value; the CMOS infrared sensing structure comprises a resonant cavity formed by a reflecting layer and a heat-sensitive dielectric layer, a suspended micro-bridge structure for controlling heat transfer and a columnar structure with electric connection and supporting functions. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield and the like are solved, and the performance of the infrared detector is optimized.

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, and the infrared detector pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure on the CMOS measurement circuit system which are prepared through a full CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure, a plurality of columnar structures, a dielectric protection layer and an etching barrier layer, wherein the dielectric protection layer and the etching barrier layer are located on the reflecting layer. The columnar structures comprise at least two layers of stand columns which are arranged in an overlapped mode and located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; each layer of stand columns can be at least one of solid metal columns, non-metal solid columns or hollow columns; the dielectric protection layer surrounds the side surface of the columnar structures, and the etching barrier layer at least covers the corner angle position of the dielectric protection layer. Therefore, the problems of low performance, low pixel scale, low yield and the like of a traditional MEMS process infrared detector are solved; and the detection sensitivity and the structural stability are improved.

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, and the pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure on the CMOS measurement circuit system which are prepared by adopting a full CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, and the columnar structures are located between the reflecting layer and the infrared conversion structure; the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; the infrared conversion structure comprises an absorption plate and a beam structure, and the absorption plate is electrically connected with the columnar structures through the beam structure; the columnar structures comprise at least two layers of stand columns, and each layer of stand columns can be at least one of solid metal columns, non-metal solid columns or hollow columns. The pixel further comprises a reinforcing structure which is used for enhancing the connection stability between the columnar structures and the infrared conversion structure. The problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved. The sensitivity is high and the stability is good.

The invention aims at providing a servo pressurizing spot welding system. The system comprises a welding controller, welding tongs and a connecting cable, wherein the welding controller is connected to the welding tongs through the connecting cable, and the welding controller comprises a welding main control panel, a welding driving board, a motor control board, a motor driver, a programming / display interface and an external I / O bus communication module; the welding tongs comprise a transformer, an electrode arm, a servo motor and a welding tongs body bracket; the connecting cable comprises a welding power wire, a welder control wire and a motor signal / power wire. The servo pressurizing spot welding system has the beneficial effects that the function of controlling the welding pressure can be achieved on the basis of a traditional welding controller, and the dependence of an current technology on robot servo control can be removed, so that the applicable scope of servo welding can be expanded, and the servo pressure control of manual welding tongs and automatic welding tongs can be achieved.

The disclosure relates to an infrared detector mirror image element and an infrared detector based on CMOS technology. The mirror image element includes: CMOS measurement circuit system and CMOS infrared sensing structure are both prepared by CMOS technology, and directly prepared above the CMOS measurement circuit system CMOS infrared sensing structure; the infrared conversion structure is electrically connected to the CMOS measurement circuit system through the columnar structure and the supporting base; the infrared conversion structure includes an absorption plate and a beam structure located on the same layer, and the absorption plate converts the infrared signal into an electrical signal and passes through the beam structure It is electrically connected with the columnar structure; the absorption plate includes a metal structure on one side close to or away from the CMOS measurement circuit system, and at least part of the reflection plate is located in the orthographic projection of the metal structure. Through the technical proposal of the present disclosure, the problems of low performance, low pixel scale and low yield rate of infrared detectors in traditional MEMS technology are solved.

The invention relates to an infrared detector mirror image pixel and an infrared detector based on a CMOS process, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure which are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a first columnar structure, and the infrared conversion structure is electrically connected with the CMOS measuring circuit system through the first columnar structure and the supporting base; the beam structure is located on the side, close to the CMOS measurement circuit system, of the absorption plate, the absorption plate comprises a metal structure close to or away from the side, close to or away from the CMOS measurement circuit system, of the CMOS measurement circuit system, and at least part of the reflection plate is located in the orthographic projection of the metal structure. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.