Preparation method of CMOS infrared detector with solid column and infrared detector

Abstract

The invention relates to a preparation method of a CMOS infrared detector with a solid column and the infrared detector. The preparation method comprises the following steps of preparing a CMOS measurement circuit system and a CMOS infrared sensing structure by adopting a CMOS process, wherein the preparation of the CMOS infrared sensing structure comprises the substeps of preparing a first metal interconnection layer on top-layer metal of a CMOS measurement circuit system by adopting an RDL process or taking the top-layer metal of the CMOS measurement circuit system as the first metal interconnection layer; preparing a first interconnection column by adopting a through hole process and a CMP planarization process; depositing a second metal interconnection layer above the first interconnection column to form a beam structure; depositing a third metal interconnection layer to form a second interconnection column; and depositing a fourth metal interconnection layer and a second dielectric layer to form the absorption plate. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared detector are solved, and the performance of the infrared detector is optimized.

Description

technical field [0001] The invention relates to the technical field of infrared detection, in particular to a preparation method of a CMOS infrared detector with a solid column and the infrared detector. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared...

AI Technical Summary

Problems solved by technology

[0010] In order to solve the above technical problems or at least partly solve the above technical problems, the present invention provides a method for preparing a CMOS infrared detector with a solid column and an infrared detector , Solve the problems of low performance, low pixel size, low yield and poor consistency of traditional MEMS process infrared detectors, and optimize the performance of infrared detectors

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