Infrared detector based on CMOS process

An infrared detector and process technology, applied in the field of infrared detection, can solve the problems of low pixel scale, low yield rate, and low performance of infrared detectors, and achieve the effects of small chip area, high yield rate, and reduced process difficulty

Active Publication Date: 2021-11-30
BEIJING NORTH GAOYE TECH CO LTD
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Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector based on CMOS technology to solve the problems of low performance, low pixel scale, and low yield rate of traditional MEMS technology infrared detectors. The performance of the infrared detector

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  • Infrared detector based on CMOS process
  • Infrared detector based on CMOS process
  • Infrared detector based on CMOS process

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Embodiment Construction

[0050] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0051] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0052] figure 1 It is a schematic diagram of a three-dimensional structure of an infrared detector provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of an infrared detector provided by an embodiment of the present disclosure. combine ...

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Abstract

The invention relates to an infrared detector based on a CMOS process, a CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS manufacturing process of the CMOS infrared sensing structure comprises a metal interconnection process, a through hole process and an RDL process, the CMOS infrared sensing structure comprises at least two metal interconnection layers, at least two dielectric layers and a plurality of interconnection through holes, the dielectric layers at least comprise a sacrificial layer and a heat-sensitive dielectric layer, and the heat-sensitive dielectric layer comprises a heat-sensitive material of which the resistance temperature coefficient is greater than a set value; the CMOS infrared sensing structure comprises a resonant cavity formed by a reflecting layer and a heat-sensitive dielectric layer, a suspended micro-bridge structure for controlling heat transfer and a columnar structure with electric connection and supporting functions. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield and the like are solved, and the performance of the infrared detector is optimized.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure is prepared by MEMS (M...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/44
CPCG01J1/44Y02P70/50
Inventor 翟光杰武佩潘辉翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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