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Preparation method of infrared micro-bridge detector with multilayer structure and infrared micro-bridge detector

A multi-layer structure and detector technology, applied in the field of infrared detection, can solve the problems of low performance, low pixel scale, and poor consistency of infrared microbridge detectors, and achieve the effects of circuit adjustment performance, small chip area, and small size

Pending Publication Date: 2021-11-12
BEIJING NORTH GAOYE TECH CO LTD
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Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present invention provides a preparation method of a multi-layer structure infrared micro-bridge detector and an infrared micro-bridge detector, which solves the performance problems of traditional MEMS technology infrared micro-bridge detectors. Low, low pixel size, low yield and poor uniformity, optimized the performance of infrared micro-bridge detectors

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  • Preparation method of infrared micro-bridge detector with multilayer structure and infrared micro-bridge detector
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  • Preparation method of infrared micro-bridge detector with multilayer structure and infrared micro-bridge detector

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[0060] The above objects, features, and advantages of the present invention will be more clearly understood, and the scheme of the present invention will be further described below. It should be noted that the features of the present invention in the embodiments and embodiments of the present invention can be combined with one another in the case of an incapacity.

[0061] Many of the specific details are set forth in the following description to facilitate appreciation of the present invention, but the present invention can also be embodied in the embodiments different from the description thereof; Not all embodiments.

[0062] figure 1 A process of preparation method of a multilayer structure infrared micro-bridge detector according to an embodiment of the present invention. The preparation method of multilayer structural infrared micro-bridge detectors can be applied to applications that need to be prepared on the infrared micro-bridge detector. like figure 1 As shown, the pre...

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Abstract

The invention relates to a preparation method of an infrared micro-bridge detector with a multilayer structure and the infrared micro-bridge detector. The preparation method comprises the following steps: preparing a CMOS (Complementary Metal Oxide Semiconductor) measurement circuit system and a CMOS infrared sensing structure by adopting a CMOS process; the step of preparing the CMOS infrared sensing structure comprises the substeps of preparing a first metal interconnection layer on top-layer metal of a CMOS measurement circuit system by adopting an RDL process or taking the top-layer metal of the CMOS measurement circuit system as the first metal interconnection layer; preparing a first interconnection column by adopting a through hole process and a CMP planarization process; depositing a second metal interconnection layer above the first interconnection column to form a beam structure; preparing a second interconnection column by adopting a through hole process and a CMP planarization process; and depositing a third metal interconnection layer and a second dielectric layer to form the absorption plate. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared micro-bridge detector are solved, and the performance of the infrared micro-bridge detector is optimized.

Description

Technical field [0001] The present invention relates to the field of infrared detection, particularly to a method for producing a multilayer structure microbridge infrared detectors and infrared microbridge detector. Background technique [0002] The field of market surveillance, and auxiliary car market, home market, the smart phone applications and manufacturing markets have a strong demand for uncooled high-performance chip, and the chip is good or bad performance, price and performance of products have a certain consistency requirements, the potential annual demand is expected to more than one hundred million chips, and the current scheme and the infrastructure can not meet market demand. [0003] Currently microbridge infrared detector using the measurement circuit, and a combination of infrared sensor structure, the measuring circuit using CMOS manufacturing process (Complementary Metal-Oxide-Semiconductor, complementary metal oxide semiconductor), and the infrared sensing ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/20G01J1/42H01L27/146B81C1/00
CPCG01J5/20G01J1/42H01L27/14669B81C1/00015G01J2005/202
Inventor 翟光杰武佩潘辉翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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