Infrared detector and pixel based on CMOS process and preparation method thereof

Abstract

The invention relates to an infrared detector pixel based on a CMOS process and a preparation method thereof, and the infrared detector pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure on the CMOS measurement circuit system which are prepared by adopting a full CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures which are located on the CMOS measurement circuit system, the columnar structures are located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; the CMOS infrared sensing structure further comprises a medium protection layer and an etching barrier layer which are located on the reflecting layer. The dielectric protection layer surrounds the side surface of the columnar structure, and the etching barrier layer at least covers the corner angle position of the dielectric protection layer. The problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved. Besides, the structural stability of the infrared detector is improved.

Description

Technical field [0001] The present disclosure relates to the field of infrared detection techniques, and more particularly to an infrared detector and a pixel, a preparation method based on a CMOS process. Background technique [0002] Monitor the market, car assistance market, home market, intelligent manufacturing market, and mobile applications have strong demand for non-refrigerated high-performance chips, and the performance of chip performance, consistency, and product price have certain The requirements are expected to have a potential demand for hundreds of millions of chips per year, and the current process programs and architectures cannot meet market demand. [0003] At present, the infrared detector uses the combination of measuring circuits and infrared sensing structures, and the measuring circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, complementary metal oxide semiconductor) process, and the infrared sensing structure uses MEMS (Micro-Electro...

AI Technical Summary

Problems solved by technology

[0011] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector and pixel based on CMOS technology, and a preparation method, which solves the problem of low performance and low pixel scale of traditional MEMS technology infrared detectors. Low yield rate and other issues, while improving the structural stability of the infrared detector

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