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Image sensor and formation method thereof

An image sensor and device layer technology, applied in the field of semiconductor technology, to achieve the effects of simplified process steps, high quality and high process control accuracy

Inactive Publication Date: 2019-01-29
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In some embodiments of the present invention, the above steps occur in the sequence described, and the method for forming the image sensor is particularly suitable for back-illuminated image sensors, and the device structure only needs to be fabricated layer by layer from bottom to top without requiring many The wafer is flipped once, the preparation process is simple and efficient, and the problem of image smearing is effectively solved

Method used

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  • Image sensor and formation method thereof

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Embodiment Construction

[0019] Below, while referring to the attached Figure 1 Preferred embodiments of the present invention will be roughly described. In addition, the embodiments of the present invention are not limited to the following embodiments, and various embodiments within the scope of the technical idea of ​​the present invention can be adopted.

[0020] It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer. A layer may be on, adjacent to, connected to, or coupled to other elements or layers, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. layer. It will be understood that, although the terms first, second, third etc. may b...

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Abstract

The invention provides a formation method of an image sensor. The wiring of photodiodes is connected with a diode structure, and the diode structure is controlled through an external circuit so as totimely export photon-generated carriers in the photodiodes, thereby solving a problem of image tailing. The formation method of the image sensor comprises the steps of providing three or more vertically stacked photodiodes; forming a diode structure coupled to one of the photodiodes, wherein the diode structure includes first doping regions which are arranged adjacent to each other in a vertical direction and second doping regions with the doping type being opposite to that of the first doping regions, and the photodiodes are coupled to the first doping regions; and forming a metal interconnection structure coupled to the second doping regions.

Description

technical field [0001] The invention relates to the field of semiconductor technology, and more specifically, the invention relates to an image sensor and a forming method. Background technique [0002] In the image sensor, when light is projected into the photosensitive element, part of the photons will be reflected by the semiconductor material, and the remaining photons will be absorbed by the photosensitive layer in the photosensitive element and excite electron-hole pairs to generate photogenerated carriers, thus completing the photoelectric process. The process of conversion. The wavelengths of different colors of light are different, and the probability of photons being absorbed by the photosensitive layer is different, and the absorption depth is also different: the wavelength of blue light is shorter, the probability of blue light photons being absorbed by the photosensitive layer is higher, and the incident depth is shallower; the wavelength of red light is longer....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14636H01L27/1464H01L27/14647H01L27/14683
Inventor 吴明吴孝哲林宗贤吴龙江熊建锋杨基磊
Owner HUAIAN IMAGING DEVICE MFGR CORP
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