Micro-bridge structure infrared detector

Abstract

The invention relates to a micro-bridge structure infrared detector, a CMOS measurement circuit system and a CMOS infrared sensing structure in the micro-bridge structure infrared detector are both prepared by using a CMOS process, the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process, and a columnar structure in the micro-bridge structure infrared detector is a hollow columnar structure. The columnar structure at least comprises an electrode layer, and each of the absorption plate and the beam structure at least comprises a first dielectric layer, an electrode layer and a second dielectric layer; and the infrared detector with the micro-bridge structure further comprises a metamaterial structure and/or a polarization structure. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield, poor in consistency and the like are solved, the absorption rate of the infrared detector of the micro-bridge structure to incident infrared electromagnetic waves is improved, the performance of the infrared detector of the micro-bridge structure is optimized, and the difficulty of optical design of the infrared detector with the micro-bridge structure is reduced.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector with a microbridge structure. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector with microbridge structure adopts the combination of measurement circuit and infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure is ...

AI Technical Summary

Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides a micro-bridge structure infrared detector, which solves the problem of traditional MEMS process infrared detectors. Problems such as low performance, low pixel size, low yield and poor consistency have improved the absorption rate of the micro-bridge structure infrared detector to the incident infrared electromagnetic wave, optimized the performance of the micro-bridge structure infrared detector, and reduced the micro-bridge structure infrared The Difficulty of Detector Optical Design

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