49results about How to "Effective stress" patented technology

Provided is a semiconductor device manufacturing method by which sufficient stress can be applied to a channel region within allowable ranges of concentrations of Ge and C in a mixed crystal layer. A semiconductor device is also provided. A dummy gate electrode 3 is formed on a Si substrate 1. Then, a recess region 7 is formed by recess etching by using the dummy gate electrode 3 as a mask. Next, on the surface of the recess region 7, a mixed crystal layer 8 composed of a SiGe layer is epitaxially grown. Subsequently, an interlayer insulating film 12 is formed on the mixed crystal layer 8 to cover the dummy gate electrode 3, and the interlayer insulating film 12 is removed until the surface of the dummy gate electrode 3 is exposed. A recess 13 is formed on the interlayer insulating film 12 to expose the Si substrate 1 by removing the dummy gate electrode 3. Then, a gate electrode 15 is formed in the recess 13 by having a gate insulating film 14 in between.

An electrode capable of effectively dispersing or relieving the stress generated in association with expansion and contraction of an active material is provided. The electrode is produced by forming an active material layer on a predetermined current collector. This current collector includes a base and a plurality of projections formed so as to extend outwardly from a surface of the base. The cross section of the projections in a thickness direction of the current collector has a tapered shape in which a width in a direction parallel to the surface of the base narrows from the surface of the base along an extending direction of the projections.

By forming a non-oxidizable liner in an isolation trench and selectively modifying the liner within the isolation trench, the stress characteristics of the isolation trench may be adjusted. In one embodiment, a high compressive stress may be obtained by treating the liner with an ion bombardment and subsequently exposing the device to an oxidizing ambient at elevated temperatures, thereby incorporating silicon dioxide into the non-oxidizable material. Hence, an increased compressive stress may be generated within the non-oxidizable layer.

The invention discloses a preparation method for a high-density interposer for microelectronic system-in-package. The preparation method comprises the following steps of: 1, preparing a drectionally growing carbon nanotube bundle array, wherein the diameter of each carbon nanotube bundle is 0.5 to 30 microns, the gap of the carbon nanotube bundle is 0.8 to 100 microns, and the carbon nanotube bundle is 40 to 500 microns long; 2, depositing metal tungsten on the surface of the drectionally growing carbon nanotube bundle so as to form a conductor array; 3, melting borosilicate glass and compounding the melted borosilicate glass with the conductor array so as to form a compound body; and 4, grinding the upper surface and the lower surface of the formed compound body so as to expose the end of the carbon nanotube bundle deposited with the metal tungsten, and obtaining the high-density interposer for the system-in-package. The material adopted by the preparation method has low thermal expansivity and the process method is low in time consumption, so the prepared high-density interposer has the advantages of high density, high reliability and low cost.

The invention discloses a method for packaging a glass-silicon wafer-grade chiponboard (COB) of a light emitting diode (LED). The method comprises the following steps: 1, etching a silicon micro slot array with the micro slots communicated with each other through micro channels, and placing a proper amount of heat outgas agent in the micro slots; 2, performing anodic bonding on the Si wafer with patterns and the heat outgas agent and borosilicate glass wafer in air or in vacuum to form a sealed cavity; 3, heating and preserving heat to form a spherical glass micro cavity, cooling the cavity to normal temperature, annealing and removing silicon to obtain a wafer-grade glass micro cavity; 4, preparing a lead substrate; 5, mounting a chip and leading a wire; 6, carrying out wafer-grade bonding; and 7, filling silica gel to realize the wafer-grade packaging of the LED. By achieving the integration with the wafer-grade LED reflecting cup, the method reduces heat resistance and cost.

A semiconductor device includes a semiconductor substrate, a plurality of integrated circuit devices on the semiconductor substrate, and a seal ring structure surrounding each one of the integrated circuit devices. The seal ring structure includes a plurality of interlayer dielectric layers and a plurality of hollow through-hole structures disposed within each of the interlayer dielectric layers. Each of the hollow through-hole structure within an interlayer dielectric layer includes a through-hole disposed within one of the interlayer dielectric layers, a diffusion barrier layer formed at the bottom, sidewalls and the top of the through-hole, and a seed layer disposed on the diffusion barrier layer. The diffusion barrier layer and the seed layer cover the top of the through-hole so that the through-hole has a void to form the hollow through-hole structure.

In a color cathode ray tube, by optimizing an outer radios of curvature, an inner radius of curvature on a corner portion, a thickness of a long side, a thickness of a short side, a thickness of the corner portion, the total length of the panel, the total length of the funnel body and the total length of a yoke portion of the funnel determining a section shape of the yoke portion of the funnel, a stress concentrated on the yoke portion can be lowered. In addition, according to the increase of an inner radius of curvature of the corner portion of the yoke portion, a crash phenomenon of an electron beam is decreased, and an impact resistance and productivity improvement in fabrication process can be secured by lowering a high stress occurrence on the funnel in vacuum.

This cowl top cover has a cover body section and a vertical wall section which extends vertically from the front end of the cover body section. The vertical wall section is provided with a vertical wall body, an opening which is formed in the vertical wall body, and a cover section has a cover-side bending promotion section which extends in the width direction of the vehicle and which promotes the bending and deformation of the cover section to one side of the length direction of the vehicle. As a result of this configuration, the cowl top cover can consistently exhibit a sufficient impact absorption function when subjected to an impact.

The invention relates to the field of tunnel defect rectification technology structures, in particular to a tunnel bottom structure and a construction method capable of eliminating uplifts of invertedarches of a tunnel in an area with high ground pressure. The structure comprises the inverted arches and an over-break back-filling layer; multiple sets of pressure releasing holes are formed in theinterior of the over-break back-filling layer in the transverse direction of the tunnel at intervals in a drilled mode, and each set of the pressure releasing holes comprises the multiple pressure releasing holes which are arranged in the longitudinal direction of the tunnel at intervals; the lower ends of the pressure releasing holes stretch into surrounding rock under the tunnel bottom; multipledrainage ditches arranged in the transverse direction of the tunnel at intervals are formed in the inverted arches, a set of steel pipes are arranged in each drainage ditch, the steel pipes are filled with gravel, and the steel pipes, the over-break back-filling layer and pores in the pressure releasing holes are communicated. According to the tunnel bottom structure, arrangement is orderly, theconstruction process is convenient, fast and compact, and the economical and environmentally-friendly effects are significant; when uplift destruction of the inverted arches generated due to the action of vertically-upward high compression stress needs to be prevented, by means of the method, ground stress can be effectively released, and underground water with high water levels can be effectivelydrained, so that potential safety hazards of late operation of the tunnel are eliminated, and the effect of fundamentally preventing the uplifts of the inverted arches is achieved.

The present invention relates to a mass loading method and system. The mass loading method and system applies the mass to load on a structural model. The method comprises: intensively preprocessing the mass to obtain multiple discrete mass points; carrying out finite element modeling on the structural model to obtain multiple structural nodes; establishing a sub-regional matching relation between the multiple discrete mass points and the multiple structural nodes; and using a three-dimensional interpolation function to carry out sub-regional interpolation, thereby realizing that the mass is uniformly loaded on the structural model. The mass loading method and system of the present invention exert the following beneficial technical effects that: the mass is enabled to distribute on the structural nodes of the structural model as uniform as possible, and the physical behavior can be truly reflected.

The invention discloses a double-layer solid wood composite floor and a manufacturing method thereof. The double-layer solid wood composite floor comprises a solid wood face layer (1) with wood grains extending in the length direction of the solid wood face layer; a plurality of small long-strip-shaped battens (2) which are arranged side by side are glued under the solid wood face layer (1); and wood grains of the small long-strip-shaped battens (2) extend in the length direction of the small long-strip-shaped battens (2). The wood grain direction of the small long-strip-shaped battens (2) is perpendicular to the wood grain direction of the solid wood face layer (1), and the length of the small long-strip-shaped battens (2) is equal to the width of the solid wood face layer (1). Gaps are reserved between the adjacent small long-strip-shaped battens (2). According to the double-layer solid wood composite floor and the manufacturing method thereof, the use amount of high-quality solid wood can be reduced effectively, wood resources are saved, and simultaneously high structural strength and whole stability are achieved.

The invention relates to a halogen-free flame-retardant thermal-contraction material and a method for preparing the same, and belongs to the technical field of intelligent materials. The halogen-freeflame-retardant thermal-contraction material and the method have the advantages that an appropriate quantity of ethylene-1-octene copolymers are added into ethylene-vinyl acetate copolymers, equivalently, flexible chains are introduced, accordingly, the toughness and the processability of the halogen-free flame-retardant thermal-contraction material can be improved, and the irradiation dose can beappropriately reduced; the ethylene-vinyl acetate copolymers are combined with maleic anhydride grafted polyethylene, surface hydrophilic groups are easy to act on the surfaces of particles of flameretardants and can be wound around the particles, and accordingly dispersion of the particles in polymer matrixes can be promoted, hydrophobic groups are wound on polymer base materials by the aid ofVan der Waals force or are physically wound on the polymer base materials, accordingly, the polymer matrixes and the ultrafine particles of the flame retardants are connected with one another and are'bridged' with one another, and the interfacial bonding strength can be improved; perfect interfacial tension can be applied to the inorganic flame retardants and the polymer matrixes under 'bridged'effects, accordingly, stress and strain can be effectively transmitted and distributed between two phases by composite material systems, and the performance of composite systems can be improved.

Disclosed is a flexible substrate, comprising a first organic layer, a first inorganic layer, a second organic layer and a second inorganic layer. The first inorganic layer is located on the first organic layer. The first inorganic layer comprises first strips which are spaced. The first strip comprises a first middle part and two first side parts. The second organic layer covers the first inorganic layer. The second inorganic layer is located on one side of the second organic layer remote from the first organic layer. The second inorganic layer comprises second strips which are spaced. The second strip comprises a second middle part and two second side parts. An extension direction of the second strips is the same as an extension direction of the first strips, the second organic layer is partially interposed between two first strips and between two second strips which are adjacent.