The invention discloses a copper alloy wire used for semiconductor devices. The copper alloy wire comprises, by weight, 20 to 40% of manganese, 20 to 30% of zinc, or 20 to 30% of zinc and manganese, and the balance copper. According to the copper alloy wire, relatively cheap manganese and / or zinc is added into copper base material according to the weight ratio so as to improve copper wire physico-chemical properties relating to wire bonding technology, wire melting point is reduced, wire oxidation resistance and corrosion resistance are improved, wire thermal softening degree at a working temperature is increased, and wire material cost is reduced; and in addition, oxidation resistance of the copper alloy wire is increased, so that reducing protective gas is not necessary in wire bonding processes, using of nitrogen is enough, and accidents are avoided.