The invention discloses an MEMS (Micro Electro
Mechanical System)
infrared sensor based on film bulk acoustic
resonator and a preparation method of the MEMS
infrared sensor. The MEMS
infrared sensor sequentially comprises a
metal block, a piezoelectric oscillation
pile and an
acoustic wave reflection layer, wherein the piezoelectric oscillation
pile and the
metal block are sequentially deposited on the
acoustic wave reflection layer; the piezoelectric oscillation
pile comprises a bottom
electrode, a piezoelectric layer and an upper
electrode which are sequentially deposited on the
acoustic wave reflection layer; the upper
electrode is arranged on the surface of the infrared sensor and called as an
infrared window film; the material of the
infrared window film is a conductive film with infrared
transmittance rate, so that infrared light irradiates the piezoelectric layer by transmitting the upper electrode; the acoustic wave reflection layer comprises a substrate, a support layer and an
air cavity; the support layer is deposited on the substrate; the
air cavity is formed between the substrate and the support layer; the piezoelectric oscillation pile is deposited on the support layer. The MEMS infrared sensor is small in size, low in production cost and simple in preparation process; the MEMS infrared sensor can be repeatedly used and is capable being produced in batches and integrating arrays, low in production cost, easily compatible with external circuits, free of
refrigeration and sensitive to the overall infrared
wave band.