33 results about "Substrate network" patented technology

Provided are polymer compositions made by a process comprising: (a) providing a first reactive composition containing: (i) a polymerization initiator that is capable, upon a first activation, of forming two or more free radical groups, at least one of which is further activatable by subsequent activation; (ii) one or more ethylenically unsaturated compounds; and (iii) a crosslinker; (b) subjecting the first reactive composition to a first activation step such that the first reactive composition polymerizes therein to form a crosslinked substrate network containing a covalently bound activatable free radical initiator; (c) contacting the crosslinked substrate network with a grafting composition containing one or more ethylenically unsaturated compounds, wherein the contacting is conducted under conditions such that the grafting composition penetrates into the crosslinked substrate network; and (d) activating the covalently bound activatable free radical initiator at one or more selective regions of the crosslinked substrate network such that the grafting composition polymerizes with the crosslinked substrate network at the selective regions.

Techniques are described for implementing secure communications between edge devices providing cloud computing services in an edge environment. A computing cluster can include a plurality of cloud-computing edge devices. The computing cluster can implement a distributed control plane for performing operations related to managing cloud infrastructure resources within the computing cluster. The cloud-computing edge devices can be connected to an intra-node switch to form a substrate network. The data related to control plane operations may be transmitted over the substrate from one edge device to another, such that control plane operations can be performed at any suitable edge device in the cluster. The edge devices can use an encryption protocol to encrypt the data transmitted over the substrate network via the intra-node switch.

The application discloses a three-dimensional structural sulfur-copper compound / carbon fiber composite material, its preparation method and application. The composite material includes: a conductive matrix network mainly formed by carbon fibers; and sulfur-copper compound nanosheets coated on the surface of the carbon fibers. The preparation method comprises: dissolving the copper source and the carbon source in an organic solvent to form a uniform spinning solution; treating the spinning solution with an electrospinning method to obtain a spinning material; sequentially pre-oxidizing the spinning material and Carbonization treatment to obtain a three-dimensional composite material precursor; mixing and reacting the precursor with a sulfur source solution to obtain the composite material. The three-dimensional structure sulfur-copper compound / carbon fiber composite material of the present application has the advantages of large specific surface area, large active material loading capacity, and excellent electrical conductivity. It can be used to construct supercapacitors with large capacity, and the preparation process is simple and easy to control, and the production efficiency is high. Low cost, conducive to large-scale implementation.

The invention provides a high-strength composite material used for special cables and a preparation method thereof. In the invention, high-performance engineering-use polyether ether ketone, polyethylene and polyimide are employed as basic polymer materials. Hyperbranched polyurethane is used for modifying molybdenum trioxide and magnesium oxide filling materials and an ethylene-vinyl acetate copolymer is used for modifying silicon nitride and zirconium oxide crystal whiskers, thereby improving binding force between inorganic filling materials and organic substrates. Meanwhile, the hyperbranched polymer penetrates the organic substrate network, thereby improving total strength. The composite material ensures high-temperature resistance, fire-proofing performance and the like and reduces defect generation rate between organic and inorganic interfaces. Compared with special cable materials with non-modified filling materials, the composite material improves strength by more than 33%, thereby effectively improving the durability and reliability of the special cables in use.

The invention provides a virtual network mapping method based on a principle of proximity. In the method, when a substrate network node is selected in node mapping, not only is available resource taken into account, but also whether the principle of proximity is satisfied is taken into account, namely whether link connection exists between the substrate network node and the substrate network node which is successful in mapping; and in addition, a mechanism that a node is lined up according to the remaining resource in the virtual network node mapping and a mechanism that a link is lined up according to the bandwidth before the virtual network link mapping are introduced into the method. The virtual network mapping method based on the principle of proximity provided by the invention is suitable for the networks which are already used or are going to use a network virtualization technology to perform network segregation, resource management scheduling or customized service providing, such as an experiment network, an operator network. The virtual network mapping method based on the principle of proximity has the characteristics of low complexity of link mapping, high utilization ratio of the substrate network resource, high success ratio of the virtual request mapping, and the like.

The invention provides a MOS transistor radio-frequency circuit simulation macro model and a parameter extraction method thereof. The simulation macro model comprises a MOS transistor simulation model, a gate resistor RG connected between a transistor gate node and a circuit grate node in series, a capacitor Cjun.s and a resistor Rjun.s and a capacitor Cjun.d and a resistor Rjun.d respectively indicating the a source electrode and a substrate, as well as the junction capacitance and parasitic resistance therebetween, and two resistor Rbulk and Rwell respectively indicating bulk resistance and trap resistance of the transistor. The four resistors Rjun.s, Rjun.d, Rbulk and Rwell are connected at one point, and indicate the parasitic resistance introduced by the substrate with a T-shaped structure. The invention also provides a method for extracting parameters of each element of a substrate network structure in the macro model using the equivalent circuit Y-parameter analytic method. The invention simulation macro model is suitable for frequency up to 20GHz, improves model accuracy of the MOS transistor in 20GHz high frequency domain, and expands the frequency application range of CMOS circuit EDA design.