Radio frequency complementary metal oxide semiconductor (RFCMOS) RF correlation noise model

Abstract

The invention discloses a radio frequency complementary metal oxide semiconductor (RFCMOS) RF correlation noise model; a noise source circuit is additionally arranged based on a metal oxide semiconductor (MOS) transistor circuit in a berkeley short-channel Igfet model (BSIM); and the noise source circuit comprises a grid induction noise current source, a grid leakage current shot-noise current source, a grid parasitic resistor thermal noise voltage source, a source electrode parasitic resistor thermal noise voltage source, a drain electrode parasitic resistor thermal noise voltage source, a channel thermal noise current source, a source electrode substrate parasitic diode shot-noise current source, a drain electrode substrate parasitic diode shot-noise current source and a substrate network parasitic resistor thermal noise voltage source. The RFCMOS RF correlation noise model comprises the grid induction noise and the correlation between the grid induction noise and channel noise, thus better conforming to the physics and improving the simulation degree of RF noise.

Description

technical field [0001] The invention relates to a model of RFCMOS radio frequency correlation noise. Background technique [0002] BSIM (Berkeley Short channel Insulated gate field effect transistor Model) model is an industry-standard MOS transistor model, but its radio frequency noise model has shortcomings. BSIM3 and previous versions only consider the channel noise model. The gate-induced noise is ignored, and this noise is especially important at high frequencies, because the thermal noise of the channel of the MOS transistor will be coupled to the gate through the capacitance between the gate and the source at high frequencies to form a gate Induced noise, this noise will have a great impact on the noise figure of the device at high frequencies, especially at frequencies above the GHz level, such as figure 1 As shown, the curve 101 is the curve of the high-frequency frequency and the best noise figure of the RFCMOS device without the BSIM noise model of the gate-induc...

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Problems solved by technology

[0003] BSIM4 and subsequent versions add another noise source at the source as a correction on the basis of BSIM3, but it does not get good fitting accuracy; the lack of noise model of BSIM model brings difficulties to the design of RF circuits Especially in the design of RF circuit transceivers with very high noise figure requirements, requirements and demands are put forward for high-precision RFCMOS RF noise models

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