Radio frequency complementary metal oxide semiconductor (RFCMOS) RF correlation noise model

A correlation and noise technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve problems such as lack of fitting accuracy, difficulty and inconvenience in RF circuit design, and achieve the effect of improving the degree of simulation

Active Publication Date: 2012-06-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] BSIM4 and subsequent versions add another noise source at the source as a correction on the basis of BSIM3, but it does not get good fitting accuracy; the lack of noise model of BSIM model brings difficul

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radio frequency complementary metal oxide semiconductor (RFCMOS) RF correlation noise model
  • Radio frequency complementary metal oxide semiconductor (RFCMOS) RF correlation noise model
  • Radio frequency complementary metal oxide semiconductor (RFCMOS) RF correlation noise model

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] like figure 2 As shown, is a schematic diagram of a model of RFCMOS radio frequency correlated noise according to an embodiment of the present invention. In the model of the RFCMOS radio frequency correlation noise in the embodiment of the present invention, a noise source circuit is added on the basis of the MOS transistor circuit in the BSIM model.

[0024] The MOS transistor circuit in the BSIM model includes an intrinsic MOS transistor 1, a gate parasitic resistance 8a, a source parasitic resistance 9a, a drain parasitic resistance 10a, a source substrate parasitic diode 13a, a drain substrate parasitic diode 14a and multiple The substrate network parasitic resistance composed of the substrate parasitic resistance 15a. The source 2 is connected to the node S, the drain 3 is connected to the node D, the gate 4 is connected to the node G, and the substrate electrode is connected to the node B. The gate of the intrinsic MOS transistor 1 is connected to the node Gi1,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a radio frequency complementary metal oxide semiconductor (RFCMOS) RF correlation noise model; a noise source circuit is additionally arranged based on a metal oxide semiconductor (MOS) transistor circuit in a berkeley short-channel Igfet model (BSIM); and the noise source circuit comprises a grid induction noise current source, a grid leakage current shot-noise current source, a grid parasitic resistor thermal noise voltage source, a source electrode parasitic resistor thermal noise voltage source, a drain electrode parasitic resistor thermal noise voltage source, a channel thermal noise current source, a source electrode substrate parasitic diode shot-noise current source, a drain electrode substrate parasitic diode shot-noise current source and a substrate network parasitic resistor thermal noise voltage source. The RFCMOS RF correlation noise model comprises the grid induction noise and the correlation between the grid induction noise and channel noise, thus better conforming to the physics and improving the simulation degree of RF noise.

Description

technical field [0001] The invention relates to a model of RFCMOS radio frequency correlation noise. Background technique [0002] BSIM (Berkeley Short channel Insulated gate field effect transistor Model) model is an industry-standard MOS transistor model, but its radio frequency noise model has shortcomings. BSIM3 and previous versions only consider the channel noise model. The gate-induced noise is ignored, and this noise is especially important at high frequencies, because the thermal noise of the channel of the MOS transistor will be coupled to the gate through the capacitance between the gate and the source at high frequencies to form a gate Induced noise, this noise will have a great impact on the noise figure of the device at high frequencies, especially at frequencies above the GHz level, such as figure 1 As shown, the curve 101 is the curve of the high-frequency frequency and the best noise figure of the RFCMOS device without the BSIM noise model of the gate-induc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F17/50
Inventor 黄景丰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap