42 results about "Phase width" patented technology

The electrode lengths of a plurality of electrodes linearly arranged in an acceleration cavity are proportional to the velocity of a traveling ion beam. Further, the electrode length is so designated that, in each half of a predetermined cycle in the ion beam direction of travel, the absolute value of a difference, relative to a length that is proportional to the beam traveling velocity is equal to or greater than a value corresponding to the phase width of the traveling ion beam, is provided for electrodes that do not exceed three units and that are fewer than electrodes allotted to half the predetermined cycle.

To generate a reconstructed image which is suited to characteristics of a site (especially a bilaterally symmetric site) and with which an appropriate image diagnosis is possible, a computation device (202): computes a back projection phase width (F1) at a rotational center (S102); computes a distance (R1) between the rotational center location which is a reference location and a pixel to be reconstructed (S103); according to the distance (R1) between the rotational center location and the pixel to be reconstructed, sets a function (f1) which changes the back projection phase width (S104); computes a back projection phase width (F2) in the pixel to be reconstructed, substituting a value of the distance (R1) between the rotational center location which is the reference location and a pixel to be reconstructed in the function (f1) which changes the back projection phase width (S105); computes a view weighting, on the basis of the back projection phase width (F2) in the post-correction pixel to be reconstructed and a slope width (gamma) of a view weighting function (S106); and reconstructs a CT image, using the view weighting (S107).

A method is provided for designing an altPSM mask including a substrate. The method includes the following steps. Provide a circuit layout. Identify critical elements of the circuit layout. Provide a cutoff layout dimension. Identify critical segments of the circuit layout which are critical elements with a sub-cutoff dimension less than the cutoff dimension. Create basic phase shapes associated with the critical segments. Remove layout violations from the phase shapes. Determine whether the widths of phase shapes associated with a critical segment have unequal narrower and wider widths. If YES, then widen each narrower phase shape to match the width of wider phase shape associated with the critical segment and repeat the steps starting with removal of layout violations until the test answer is NO. When the test answer is NO, provide a layout pattern to an output.

A multi-phase voltage regulator module connects to a central processing unit and is able to operate in one of a high-load mode and a low-load mode. The multi-phase voltage regulator module comprises: a pulse-width-modulation controller generating a plurality of phase-width-modulation signals; and, a plurality of phase circuits, each of which receives a corresponding one of the phase-width-modulation signals and generates a corresponding output current to the central processing unit; wherein a first portion of the phase circuits are activated when the multi-phase voltage regulator module is operated in the low-load mode at a first time, and, a second portion of the phase circuits are activated when the multi-phase voltage regulator module is operated in the low-load mode at a second time, the first portion being non-identical to the second portion.

Disclosed here is a cyclotron having a beam phase selector capable of controlling phase widths of beams and improving beam permeability for increasing beam current. The cyclotron contains an acceleration voltage applying section and a beam blocking section, at least any one of the two sections has a movable structure. While a particle is passing across a gap between dee electrodes, the acceleration voltage applying section applies RF acceleration voltage to the particle, and further applies RF acceleration voltage having a phase different from the phase of previously applied RF acceleration voltage. The beam blocking section blocks undesired particles. Preferably, the acceleration voltage applying section at least has an electrode having an opening in a direction of the core of the cyclotron. Also preferably, operations on phase-width control can be performed outside the cyclotron, with vacuum condition in the cyclotron maintained.

To generate a reconstructed image suitable to characteristics of a bilaterally symmetric site and possible to an appropriate image diagnosis, a computation device: computes a back projection phase width at a rotational center and distance between the rotational center location which is a reference location and a pixel to be reconstructed; according to the distance between the rotational center location and the pixel to be reconstructed, sets a function (f1) changing the back projection phase width; computes a back projection phase width in the pixel to be reconstructed, substituting a value of the distance between the rotational center location and a pixel to be reconstructed in the function (f1); computes a view weighting, on the basis of the back projection phase width in the post-correction pixel to be reconstructed and a slope width of a view weighting function; and reconstructs a CT image, using the view weighting.

A synchronization detecting circuit detects a synchronous signal from a reproduced signal of a recording medium in which a random shift method is employed. A window generator in the synchronization detecting circuit generates a third window having as a central phase one predicted phase in a second predicted coordinate that is obtained by replicating a first predicted coordinate indicating a predicted phase of each synchronous signal that repeatedly appears in the reproduced signal and having a phase width equivalent to twice a random shift width when the synchronous signal is not detected using a first window after the synchronous signal is detected using a second window by a synchronization detector.

A fast analysis method of steady-state fields performs arithmetic processing over plural time steps, performs transient analysis on the basis of an equation having a time derivative term, obtains a physical quantity of an analysis object, and includes the steps of reading input data including a time average width necessary to perform time averaging on the physical quantity, a phase width of a fundamental wave corresponding to the time average width, or a time step width necessary to perform the time averaging, and finite element modeling data of the analysis object by the arithmetic device; obtaining a time-averaged physical quantity using the time average width, the phase width of the fundamental wave, or the time step width by the arithmetic device; and obtaining a steady-state field of the physical quantity through a correction of the physical quantity using the time average quantity by the arithmetic device.

A synchronization detecting circuit detects a synchronous signal from a reproduced signal of a recording medium in which a random shift method is employed. A window generator in the synchronization detecting circuit generates a third window having as a central phase one predicted phase in a second predicted coordinate that is obtained by replicating a first predicted coordinate indicating a predicted phase of each synchronous signal that repeatedly appears in the reproduced signal and having a phase width equivalent to twice a random shift width when the synchronous signal is not detected using a first window after the synchronous signal is detected using a second window by a synchronization detector.

Disclosed is a rectifier circuit device that, by chopping a semiconductor switch (104), shorts or opens the output terminal of a single-phase AC power source (1) via a reactance, rectifying the AC voltage supplied by the single-phase AC power source (1) via the reactance (102) into a DC voltage and supplying said DC voltage to a load. A control device (100) in said rectifier circuit device: controls the chopping of the semiconductor switch (104) so as to make a detected current waveform match a target current waveform; controls the amplitude of the target current waveform so as to make a detected DC voltage match a prescribed target DC voltage; and controls said prescribed target DC voltage so as to make either the width of a chopping motion phase, which is when the semiconductor switch (104) is in a chopping motion state, or the width of a chopping rest phase, which is when the semiconductor switch (104) is in a chopping rest state, match a prescribed phase width.

The invention discloses computer-generated holograms, which are formed by arranging phase microstructural units repeatedly on a thin plain film. The computer-generated holograms are characterized in that: each phase microstructural unit contains four platforms which are arranged sequentially from bottom to top; each platform forms a phase; the width of each phase platform, namely the phase width,is 1 / 4 of the total width of each phase microstructural unit; the lowest platform is taken as a zero phase, and the phase heights of the other three high platforms are d1, d2 and d3 respectively, wherein d3-d2 is equal to d1. The computer-generated holograms of which the energy of 0 stage and the energy of 1 stage are equal are obtained, so the computer-generated holograms can be applied on occasions when light splitting devices of which different energy levels have equal energy are needed for testing off-axis convex aspheric surfaces and the like.

In order to realize a rectifier circuit device capable of attaining both reduction of power-supply harmonics and reduction of circuit losses, AC-voltage phase detection means 201, AC electric-current detection means 103 and DC-voltage detection means 110 are provided, and chopping is performed on a semiconductor switch 104 in such a way as to follow a desired electric-current waveform. A DC voltage is adjusted such that a phase at which the chopping is halted comes to be a desired phase. Also, when the phase width within which the chopping is continued is less than a set value, the DC voltage is adjusted preferentially such that the phase width within which the chopping is continued comes to be the set value. A target electric-current waveform has a combination of a monotonous increase and a constant value within the former half the period of an AC power supply and, also, has a value of zero in an interval within the latter half thereof.

A signal processing circuit detects the alteration point of the impulse of the input signal, and sets the phase point which has departed for a prescribed phase width relative to the detected alternation point of the impulse of the input signal. Thereby the sampling to the impulse-shaped input signal can be accurately executed.

The invention discloses a method of judging morphology of an interfacial phase of a micro-nano nonuniform material and belongs to micro-nano mechanics test methods. When an indentation depth is less than a scratch depth, an indentation can be avoided reaching the interfacial phase, experimental precision is improved, and micro-scale mechanical properties under no influence of peripheral effect areacquired; the nonuniform material is cut and polished to obtain a test surface suitable for nano indentation experiment; an optical microscope of a nano indenter is used to locate a rectangular areaincluding the interfacial phase in a certain range; a right-angle coordinate system containing all scratch paths is established, coordinates of acquisition points on the scratch paths are imported into origin, start and end points of the interfacial phase are connected via lines, and morphology of the interfacial phase in the rectangular area is obtained; the results are imported into SPSS (statistic package for social science) to perform data analysis so as to obtain change law of the morphology of the interfacial phase of the micro-nano nonuniform material. The method enables interfacial phase width of a typical area at certain depth to be effectively judged during nano indentation experiment on a micro-nano material.