83 results about "Metal amides" patented technology

This invention relates to an improved process for producing ternary metal silicon nitride films by the cyclic deposition of the precursors. The improvement resides in the use of a metal amide and a silicon source having both NH and SiH functionality as the precursors leading to the formation of such metal-SiN films. The precursors are applied sequentially via cyclic deposition onto the surface of a substrate. Exemplary silicon sources are monoalkylamino silanes and hydrazinosilanes represented by the formulas: (R1NH)nSiR2mH4-n-m (n=1,2; m=0,1,2; n+m=<3); and (R32N—NH)xSiR4yH4-x-y (x=1,2; y=0,1,2; x+y=<3) wherein in the above formula R1-4 are same or different and independently selected from the group consisting of alkyl, vinyl, allyl, phenyl, cyclic alkyl, fluoroalkyl, silylalkyls.

Compounds, and oligomers of the compounds, are synthesized with cyclic amine ligands attached to a metal atom. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. The films have very uniform thickness and high step coverage in narrow holes.

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors.

The present invention relates to a method for forming a metal silicon nitride film according to a cyclic film deposition under plasma atmosphere with a metal amide, a silicon precursor, and a nitrogen source gas as precursors. The deposition method for forming a metal silicon nitride film on a substrate comprises steps of: pulsing a metal amide precursor; purging away the unreacted metal amide; introducing nitrogen source gas into reaction chamber under plasma atmosphere; purging away the unreacted nitrogen source gas; pulsing a silicon precursor; purging away the unreacted silicon precursor; introducing nitrogen source gas into reaction chamber under plasma atmosphere; and purging away the unreacted nitrogen source gas.

The invention discloses an amino aryloxy rare earth metal complex. The technical scheme adopted by the invention is as follows: the amino aryloxy rare earth metal complex is an o-methoxyphnol amino aryloxy rare earth metal amide whose general formula is {[NO]LnN(TMS)2}2, wherein Ln is one respectively selected from the group of lanthanum, neodymium, samarium, ytterbium and yttrium; [NO] is o-OCH<3>-C6H4NCH2(3-R1-5-R2-C6H2-2-O), wherein R1 and R2 is one selected from the group of methyl and t butyl; The amino aryloxy rare earth metal complex has the advantages of convenient synthesis and high productivity. And the amino aryloxy rare earth metal complex can catalyze the polymerization of lactide as a monocomponent catalyst under mild condition to obtain a high molecular weight polymer. The rare earth metal complex has the advantages of convenient synthesis and high catalytic activity.

The present invention describes a metal precursor solution and metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from -diketonates, -ketoiminates, -diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors.

A process for the preparation of a Group 4 metal amide complex comprising a monovalent or divalent Lewis base ligand the steps of the process comprising contacting a Group 4 metal amide with a neutral source of a monovalent or divalent, Lewis base ligand group and a solid Lewis acid scavenging agent under amine elimination conditions to form a Group 4 metal amide complex containing at least one less amide group per metal moiety than the initial Group 4 metal amide.

A catalyst composition for the preparation of oligomeric and / or polymer derivatives of olefin monomers, said composition comprising a Group 6 metal amide complex, a Group 1, 2, 12, 13, or 14 metal hydrocarbyl composition or compound, and a solid support comprising aluminum phosphate.

Methods for the deposition via chemical vapor deposition or atomic layer deposition of metal containing films, such as, for example, metal silicate or metal silicon oxynitride films are described herein. In one embodiment, the method for depositing a metal-containing film comprises the steps of introducing into a reaction chamber, a metal amide precursor, a silicon-containing precursor, and an oxygen source wherein each precursor is introduced after introducing a purge gas.

A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02(R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of:wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.

The invention discloses Salalen-type rare-earth metal amide as well as a preparation method and catalytic application thereof. The general formula of the amid is (Salalen)Ln(NR2)(THF). The Salalen-type rare-earth metal amide disclosed by the invention is simple in synthesis, convenient to separate and purify and clear in structure and has high yield. The Salalen-type rare-earth metal amide provided by the invention serving as a catalyst also has good controllability and selectivity in the aspect of catalyzing ring-opening polymerization of racemization lactide and can be used for preparing a high-heterotactic polymer with moderate distributed high-molecular weight.

A process for the preparation of Group 4 metal hydrocarbyl complex the steps of the process comprising contacting a Group 4 metal amide with a neutral source of a monovalent or divalent, Lewis base ligand group and a Lewis acid hydrocarbylating agent under conditions to form a Group 4 metal hydrocarbyl complex.

An ammonia synthesis catalyst having high activity is obtained by having a two-dimensional electride compound having a lamellar crystal structure such as Ca2N support a transition metal. However, since the two-dimensional electride compound is unstable, the stability of the catalyst is low. In addition, in cases where a two-dimensional electride compound is used as a catalyst support, it is difficult to shape the catalyst depending on reactions since the two-dimensional electride compound has poor processability. A composite which includes a transition metal, a support and a metal amide compound, wherein the support is a metal oxide or a carbonaceous support; and the metal amide compound is a metal amide compound represented by general formula (1).M(NH2)x  (1)(In general formula (1), M represents at least one metal atom selected from the group consisting of Li, Na, K, Be, Mg, Ca, Sr, Ba and Eu; and x represents the valence of M.).

Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors. Deposition using the same tin precursor and H2S deposited tin monosulfide, SnS, a material suitable for solar cells.

The present invention relates to a preparation of a metal-containing film via ALD or CVD processes. The present invention describes methods for the deposition via chemical vapor deposition or atomic layer deposition of metal containing films, such as, for example, metal silicate or metal silicon oxynitride films. In one embodiment, the method for depositing a metal-containing film comprises the steps of introducing into a reaction chamber, a metal amide precursor, a silicon-containing precursor, and an oxygen source wherein each precursor is introduced after introducing a purge gas.

Processes are provided for producing transition metal amides. In methods according to this invention, at least a halogenated transition metal and an amine are combined in a solvent to produce an intermediate composition and an alkylated metal or a Grignard reagent is added to the intermediate composition to produce the transition metal amide.

The invention discloses an amino aryloxy rare earth metal amide and application thereof. The general formula of the amino aryloxy rare earth metal amide is [NO]2LnN(SiMe3)2Li2(THF)2, wherein Ln is a rare earth metal; and [NO]=p-R-C6H4NCH2(3-R-5-R-C6H2-2-O), R is selected from one of hydrogen or saturated alkyl groups of C1 to C4, and R and R are selected from one of methyl groups or tertiary butyl groups. The amino aryloxy rare earth metal amide can be used as a monocomponent catalyst to highly actively catalyze the ring-opening polymerization of L-lactide under mild conditions to obtain poly (L-lactide) with high molecular weight and proper molecular weight distribution.

The present invention relates to a hole injection layer for an OLED comprising a triarylamine compound doped with a charge neutral metal amide compound, characterized in that the hole injection layer has a thickness of at least about ≥20 nm to about ≤1000 nm and the charge neutral metal amide compound has the Formula Ia.

The invention discloses a piperazidine alkyl bridged bi-aryloxy rare earth-lithium bi-metal amide with a molecular formula of (THF)Li(mu-Cl)[(SiMe3)2N]2Ln[OArNNArO]Ln[N(SiMe3)2]2(mu-Cl)Li(THF) and a synthesizing method thereof, wherein the Ln is heavy rare earth metal which is selected from any one of the following substances: europium (Eu), erbium (Er) or ytterbium (Yb); and in [OArNNArO]=C4H8N2[1,4-(2-O-5-R-3-R-C6 H2CH2-)2], R and R are respectively selected from methyl or tert-butyl group. Piperazidine alkyl bridged bi-aryloxy rare earth-lithium catalysts provided by the invention can be used as single-component catalysts in a mild condition to catalyze the ring opening polymerization of L-lactide with high activity so as to obtain polylactide with high molecular weight and appropriate molecular weight distribution.

Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors. Deposition using the same tin precursor and H2S deposited tin monosulfide, SnS, a material suitable for solar cells.

An ammonia synthesis catalyst having high activity is obtained by having a two-dimensional electride compound having a lamellar crystal structure such as Ca2N support a transition metal. However, since the two-dimensional electride compound is unstable, the stability of the catalyst is low. In addition, in cases where a two-dimensional electride compound is used as a catalyst support, it is difficult to shape the catalyst depending on reactions since the two-dimensional electride compound has poor processability. A composite which includes a transition metal, a support and a metal amide compound, wherein the support is a metal oxide or a carbonaceous support; and the metal amide compound is a metal amide compound represented by general formula (1). M(NH2)x . . . (1) (In general formula (1), M represents at least one metal atom selected from the group consisting of Li, Na, K, Be, Mg, Ca, Sr, Ba and Eu; and x represents the valence of M.)

The invention relates to a preparation method of a 3,5-disubstituted thiazolidine-2-thioketone compound. The preparation method comprises the following steps of enabling an aziridine compound as shownin a formula (I) and carbon disulfide to be subjected to a reaction under the action of a catalyst, and obtaining the 3,5-disubstituted thiazolidine-2-thioketone compound as shown in a formula (II),wherein the catalyst is acylamino bivalent rare earth metal amide; the reaction is carried out in an anhydrous and oxygen-free inert atmosphere; the reaction route is as shown in the attached figure;wherein R1 is selected from hydrogen, C1 to C4 alkyl groups, an alkoxy group or halogen; the halogen is chlorine or bromine; R2 is selected from C1 to C4 alkyl groups, a benzyl group or a cyclohexyl group. The method provided by the invention is less in catalyst dosage, mild in reaction conditions, good in substrate universality and capable of synthesizing target products with high yield.

The invention belongs to the field of inorganic material synthesis processes, and discloses a method for synthesizing M(BH4)n and / or M2 / nB12H12. Specifically, M(BH4)n and the M2 / nB12H12 are obtained through reaction of M(NH2)n and B10H14, M is selected from Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba and Al and n is 1, 2 or 3. A precedent of preparing borohydride is initiated through reaction of metal amide and B10H14; a new way is provided for synthesis of a metal borohydride material; and the condition that a plasma strategy is effective means of synthesis of a metal dodecane compound is provided. The reaction conditions are simple, the security is high, a product can be obtained without dewatering treatment, a solvent does not need to be used and the environment is protected.

A process for the preparation of Group 4 metal hydrocarbyl complex the steps of the process comprising contacting a Group 4 metal amide with a neutral source of a monovalent or divalent, Lewis base ligand group and a Lewis acid hydrocarbylating agent under conditions to form a Group 4 metal hydrocarbyl complex.

A process in a resulting product of the process in which a hydrogen storage metal amide is modified by a ball milling process using an additive of TPP. The resulting product provides for a hydrogen storage metal amide having a coating that renders the hydrogen storage metal amide resistant to air, ambient moisture, and liquid water while improving useful hydrogen storage and release kinetics.

The present invention provides compositions comprising a metal amidoborane and an amine, and processes for preparing the metal amidoborane compositions. In particular, the process comprises contacting ammonia borane with a metal amide in the presence of an amine solvent to form the metal amidoborane composition. The invention also provides methods for generating hydrogen, wherein the method comprises heating the metal amidoborane composition such that hydrogen is released.

The invention relates to a method for preparing a heteroatom-doped carbon material at a room temperature. The method comprises the following steps: mixing a halogenated macromolecule and strong base with a strong polar solvent so as to obtain a mixture, grinding the mixture at the room temperature, and directly cleaning and drying after completion of grinding, so as to obtain the heteroatom-doped carbon material, wherein the halogenated macromolecule is polyvinylidene difluoride, polyvinylidene chloride or polyvinyl chloride, the strong base is alkali (earth) metal hydroxide, alkali (earth) metal alkoxide, alkali (earth) metal sulfide, alkali (earth) metal amides or alkali (earth) metal nitride, the strong polar solvent is N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide or nitrogen methyl pyrrolidone and the room temperature refers to 10-40 DEG C. According to the method, the raw materials are cheap and easy to obtain, the operation is simple, safety is high and the method is very suitable for industrial expanded production.