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Preparation of a metal-containing film via ALD or CVD processes

A metal thin film, metal amide technology, applied in metal material coating process, thin material processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as deterioration of leakage current characteristics

Inactive Publication Date: 2009-05-27
AIR PROD & CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Leakage current characteristics deteriorate as the surface roughness of the metal oxide film increases

Method used

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  • Preparation of a metal-containing film via ALD or CVD processes
  • Preparation of a metal-containing film via ALD or CVD processes
  • Preparation of a metal-containing film via ALD or CVD processes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Example 1. Preparation of zirconium silicate films by PEALD at different temperatures.

[0038] An exemplary zirconium silicate film is deposited in a shower head type ALD reactor, manufactured by Quros Co, South Korea. The temperature of the chip is controlled by a proportional integral derivative (PID) controller. The thin film is deposited on a silicon wafer, which is a boron-doped p-type (100) wafer with a resistivity of 1-50 Ohm.cm, manufactured by LG Siltron, South Korea. The metal amide precursor used for deposition is tetrakis(ethylmethylamino)zirconium (TEMAZ), which is placed in a temperature-controlled bubbler, model BK500UST, manufactured by AirProducts and Chemicals, Inc. of Allentown PA, and uses argon as the carrier Gas delivery. The silicon-containing precursor used for deposition was bis(tert-butylamino)silane (BTBAS), which was placed in a temperature-controlled bubbler, model BK1200USH, manufactured by Air Products and Chemicals, Inc. of Allentown PA, usi...

Embodiment 2

[0040] Example 2. Preparation of zirconium silicate film by PEALD at 250°C.

[0041] The three exemplary films were deposited in the same manner as described in Example 1, except that the heater temperature was 250°C. The sheet temperature is 200°C, 250°C, 300°C and 350°C. The temperature difference between the sheet and the heater varies with the temperature of the heater.

[0042] image 3 Illustrates the results of the above test. The thickness of each exemplary film deposited at different temperatures was measured in Angstroms by ellipsometry, using a model SE800 ellipsometer, manufactured by Sentech Instruments. image 3 Provides a comparison of the thickness and temperature of the three types of ZrSiOx films deposited in the PEALD process.

Embodiment 3

[0043] Example 3. Prophetic example of preparing zirconium oxide and silicon oxide nano-laminated films by PEALD at 250°C

[0044] The nano laminated film containing zirconium oxide and silicon oxide can be prepared in the following method. The reaction chamber pressure is about 1.0 Torr, first 200 cycles of ZrO 2 Deposited in the following cycles: TEMAZ was bubbled into argon carrier gas at a flow rate of 25 sccm for 3 seconds; argon purge gas at a flow rate of 500 sccm for 5 seconds; oxygen plasma gas at a flow rate of 100 sccm for 5 seconds during RF plasma generation; argon at a flow rate of 500 sccm Purge the gas for 5 seconds. Subsequently, 50 cycles of SiO2 Deposited in the following cycles: BTBAS was added by bubbling argon carrier gas at a flow rate of 25 sccm for 0.5 seconds; argon purge gas at a flow rate of 500 sccm for 5 seconds; oxygen plasma at a flow rate of 100 sccm for 5 seconds during RF plasma generation; during RF plasma generation The oxygen plasma lasts for ...

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Abstract

The present invention relates to a preparation of a metal-containing film via ALD or CVD processes. The present invention describes methods for the deposition via chemical vapor deposition or atomic layer deposition of metal containing films, such as, for example, metal silicate or metal silicon oxynitride films. In one embodiment, the method for depositing a metal-containing film comprises the steps of introducing into a reaction chamber, a metal amide precursor, a silicon-containing precursor, and an oxygen source wherein each precursor is introduced after introducing a purge gas.

Description

[0001] Cross reference of related applications [0002] This application requires the right to the U.S. Provisional Application 60 / 986,469 filed on November 8, 2007. The content of the provisional application is hereby incorporated by reference. Background of the invention [0003] The present invention broadly relates to methods of forming metal-containing films. More specifically, the present invention relates to the use of deposition methods, such as but not limited to atomic layer deposition (ALD) or cyclic chemical vapor deposition (CCVD), to form metal-containing films, such as metal silicate films or metal silicon oxynitride films, to For example, gate dielectric or capacitor dielectric film in semiconductor devices. [0004] With each generation of metal oxide semiconductor (MOS) integrated circuits (ICs), device sizes are continuously shrinking to meet the requirements of high density and high performance such as high speed and low energy consumption. Unfortunately, field-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/18
CPCC23C16/45531C23C16/40C23C16/45527C23C16/401Y10T428/31663H01L21/02148H01L21/02159C23C16/50C23C16/45553H01L21/02164H01L21/02181H01L21/022H01L21/02274H01L21/0228H01L21/02205
Inventor 金旼径金武性雷新建杨相铉
Owner AIR PROD & CHEM INC
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