39 results about "Longitudinal growth" patented technology

An exhaust connection coupler is provided having a flexible conduit portion, a cover made of a generally porous and flexible knitted metallic wire mesh material surrounding the conduit portion and a retainer for combining end parts of the conduit portion and cover. The cover may be constructed of a series of stockinette stitches formed in a continuous round-and-round manner in a seamless tubular configuration. The cover can be selected from a group of covers designed to be applied to the coupler, the particular cover being chosen for its weight or stiffness so as to selectively control the natural frequency of the coupler. Additionally, the loosely knitted configuration of the cover is designed to provide resistance limiting longitudinal growth of the coupler while enabling compression and angular flexibility. Further, the coupler may include one or more spacers for providing separation between the cover and the conduit portion.

The invention discloses a method for predicting the distribution of a thin sand body. The method includes the following steps: 1. using well logging information to identify a sand body, determining the pattern of longitudinal growth of the sand body from a geological section; 2. conducting phase rotation at -90 DEG on an original seismic section, such that the thin sand body corresponds to seismic wave amplitude response characteristics; 3. projecting a typical well-sand group to the seismic section, determining the position of the thin sand body to the seismic section; 4. longitudinally conducting continuous stratal slice on a seismic data body, observing the change characteristics of the seismic wave forms of the slices, determining a response characteristic slice of the thin sand body; and 5. using the response characteristic slice to determine the distribution range of the thin sand body on a plane. The method can accurately and efficiently predicts distribution and thickness of the thin sand body in a sand body.

The invention discloses a special apparatus for correcting scoliosis deformity in a growth period, which consists of a growth regulation bar, a sliding vertebral pedicle bolt and a common vertebral pedicle bolt. The special apparatus has the function of automatically sliding to the far end along with the growth of a vertebral column, does not affect the longitudinal growth of the vertebral column, prevents a sick child from suffering from pain of repeated regulation operation, and further improves the curative effect of surgical posterior correction of the scoliosis in the growth period.

A medical balloon composed of a micro-composite material which provides for radial expansion of a balloon to a predetermined extent, but which has minimal longitudinal growth during balloon inflation. The micro-composite material includes a fibril component, a matrix component, and optionally, a compatibilizer. The fibril component may preferably be liquid crystal polymer fibers randomly scattered through out the balloon material. The liquid crystal polymers are created by extrusion at high speed. An alternative fibril component may be a PET fibers which are uniformly spaced about the balloon material and extend through out the length of the balloon material tube.

The invention discloses an anti-staling agent for freshly cut flowers and a preparation method thereof. The existing anti-staling agents with relatively good anti-staling effect need to be prepared when required, and can not be used conveniently and have short preservation time and are hardly applicable to large-scale production of industrialization. The anti-staling agent stated by the invention comprises calcium dihydrogen phosphate, salicylate, 8-hydroxyquinoline, citric acid, nano-silver-titanium material and the mixture of cytokinin and growth hormone. The anti-staling agent acquired by mixing the materials of the invention has excellent anti-staling effect, and the effect of protecting flowers and leaves can compete with a foreign anti-staling agent Chrysal; the anti-staling agent has long preservation time when protected from light, does not have to be freshly prepared as ordered and can be used conveniently; the anti-staling agent can promote the cross or longitudinal growth of plants, thereby granting the flowers with a diauxic growth opportunity after being cut from the main body.

The invention discloses a method for improving large-size monocrystal diamond joint quality and belongs to the field of monocrystal diamond materials. The method comprises the following steps: simultaneously grinding and polishing two monocrystal diamonds, carrying out groove cutting treatment of different modes on surfaces of the monocrystal diamonds by using a laser etching technique, an electron beam lithography technique, an ICP (inductively coupled plasma) technique or a focused ion beam bombardment method so as to achieve splicing joint groove cutting treatment with a low displacement density and high quality, carrying out splicing growth on the two monocrystal diamonds under a microwave plasma condition, and finally splicing the two monocrystal diamonds in a transverse epitaxial manner, so as to obtain a high-quality large-size monocrystal diamonds without a splicing joint. Due to different micro-groove structures, shielding of microwaves upon plasma can be achieved, then the ratio of a transverse and longitudinal growth velocity can be optimized, furthermore, displacement defects caused by transverse epitaxies can be effectively inhibited, the consequence that a CVD (chemical vapor deposition) growth layer has a polycrystallization phenomenon or a low quality zone of a high displacement density is formed by displacement continuation can be avoided, and improvement of diamond joint quality is achieved.

The present invention relates to a nitride semiconductor thin film and a method for growing the same. The present invention has an advantage in that a plurality of grooves are formed on a substrate by partially etching the substrate, and leg portions for preventing longitudinal growth of a nitride semiconductor are formed within the grooves so that the nitride semiconductor thin film is grown laterally to cover top portions of the leg portions, thereby ensuring growth of a high quality nitride semiconductor thin film.

The invention discloses a method for preparing high-quality thick film AlN based on a nano-pattern silicon substrate, the lamellar superimposed AlN materials obtained by the method, from the bottom up, include: a nano-patterned silicon substrate, a nano-pattern AlN nucleation layer, a high-temperature AlN transverse growth layer and a high-temperature AlN longitudinal growth layer, and a periodically arranged air gap is arranged in the nano-pattern silicon substrate, the nano-pattern AlN nucleation layer and the high-temperature AlN lateral growth layer, wherein the air gap has a depth of 10 nm to 1 mum in the Si substrate, a maximum cross-sectional width of 50 nm to 1 mum, and a period of 100 nm to 2 mum. Compared with the existing method for growing thick film AlN, the method of the invention has low cost, can be applied in large-scale industrialization, greatly reduces the defect density of AlN on the silicon substrate, improves the crystal quality of the subsequent device structurematerial, and has the advantages of low cost, low cost, low cost, and low cost, and can be used in large-scale industrialization. LED devices, MEMS, LEDs, RF filters, SAW devices and high-frequency broadband communication have broad application prospects.

The embodiment of the invention provides an LED growth method for N-type layer coarsening. The method includes the steps that a metal source and ammonia are fed into the upper surface of a substrate, the metal source reacts with the ammonia, and consequently an amorphous buffer layer is formed on the upper surface of the substrate; a non-doping layer grows on the upper surface of the amorphous buffer layer; a high doping N-type layer grows on the upper surface of the non-doping layer, wherein V-shaped pits are formed in the upper surface of the high doping N-type layer and exist in a form of coarsening. A longitudinal growth pattern is adopted to maintain the shape of the V-shaped pits, a low doping N-type layer, a quantum well layer and a P-type layer grow on the upper surface of the high doping N-type layer in sequence, and therefore a complete LED structure is formed. Secondary growth is not needed, the P-type layer does not need to be transformed, and the chip manufacturing process cannot be excessively influenced.

The invention discloses a juvenile type osteoepiphysis-striding slidingly extending steel plate. The juvenile type osteoepiphysis-striding slidingly extending steel plate comprises a first steel plate and a second steel plate, wherein the first steel plate is used for being fixed on the juvenile osteoepiphysis part; the second steel plate is used for being fixed on the juvenile bone part; a first conical threaded hole, which is used for being matched with a locking screw to lock and fix the first steel plate on the juvenile osteoepiphysis part, is formed on the first steel plate; a second conical threaded hole, which is used for being matched with the locking screw to lock and fix the second steel plate on the juvenile bone part, is formed on the second steel plate; a sliding mechanism is arranged between the two steel plates; and a through hole is formed on the first steel plate and the locking screw can pass through the through hole to be used on the second conical threaded hole of the second steel plate below the first steel plate, so that the second steel plate is fixed. The juvenile type osteoepiphysis-striding slidingly extending steel plate is applied to patients with osteoepiphysis fracture of the juvenile femoral condylar part with unclosed osteoepiphysis and fracture around the osteoepiphysis, so the fracture part can be effectively fixed, inhibition on bone longitudinal growth can be alleviated, and occurring rate of dysmelia after osteoepiphysis fracture of the juvenile femoral condylar part with unclosed osteoepiphysis and fracture around the osteoepiphysis is reduced. The juvenile type osteoepiphysis-striding slidingly extending steel plate has a good application prospect.

The invention discloses a preparation method for melamine cyanurate and application thereof. The preparation method comprises the following steps: by taking cyanuric acid, melamine and water as raw materials, adding few slow releasing agent for restraining the longitudinal growth of melamine cyanurate; increasing solid-liquid rate of melamine cyanurate in the compounding process by reducing the system viscosity. The acquired product is in slice crystal form; the decomposing temperature reaches up to 350 DEG C; the melamine cyanurate completely can be used for processing the engineering plastics such as PA, PC and PET with higher temperature.

The invention discloses an HEMT epitaxial structure and a preparation method thereof, belonging to the technical field of semiconductor optoelectronics. An AlGaN buffer layer is configured to comprisean AlGaN underlayer structure and a plurality of conical protrusions arranged on the AlGaN underlayer structure, and a GaN layer grows on the AlGaN underlayer structure; due to the presence of the plurality of conical protrusions, when the GaN layer grows longitudinally in a direction away from the first surface of the substrate gradually on the AlGaN underlayer structure, the GaN layer simultaneously grows laterally in a direction parallel to the first surface, the dislocation defects generated during the longitudinal growth of part of the GaN layer can offset with the dislocation defects generated during the lateral growth of part of the GaN layer, and thus the growth quality of the GaN layer can be improved. In addition, when the GaN layer grows laterally, the defects such as dislocations inside the GaN layer can also move to the side wall of the GaN layer in the direction parallel to the first surface, so that the dislocation defects moving to the interface between the GaN layer and an AlGaN barrier layer can be reduced, the surface quality of the junction between the GaN layer and the AlGaN barrier layer can be improved, and the quality of the finally obtained HEMT can be further improved.

A process for preparation of a granular urea product by granulating a urea solution in a fluidized bed, where the granulation process takes place along a substantially longitudinal growth path, from a granulation starting end (1s) to a product discharge end (1E) of said fluidized bed, and said urea solution enters the fluidized bed by means of several urea inputs (2A, 2B, 2C) taken from a main urea feed (2), where an additive (6) is mixed with said urea solution said additive has a non-uniform concentration in said urea inputs, so that at least two of said urea inputs have a different concentration of additive.

The invention aims at providing a vegetation belt for solving the problems that the grass seeds adhered to a traditional vegetation belt easily drop, the germination rate is relatively low in the section of an environment unfavorable for the grass seed growth and ecological protection cannot be formed. The vegetation belt comprises a growth belt with a cavity, wherein holes communicated with the cavity are uniformly formed in the growth belt; the holes are used for enabling the root system and branches and leaves of the grass seeds to stretch out of the growth belt. The invention also provides a vegetation net which comprises multiple longitudinal and transverse growth belts, wherein the transverse growth belts and the longitudinal growth belts are interleaved into a net structure. In the invention, the grass seeds can be perfectly maintained, and the growth of the grass seeds is not influenced by the growth belt; and moreover, the cavity can be filled with vegetation soil to ensure that the grass seeds can grow in a severe environment, thereby improving the applicability of the vegetation belt.

The invention relates to a vertical culture vessel which comprises a vessel body, a movable insertion plate, a perforated plate and a cover. The vertical culture vessel is characterized in that the vessel body and the cover are matched into a set and integrally in the shape of a vertical structure. By the aid of the technical scheme, the vertical culture vessel has the advantages that an experimental subject can vertically grow in a natural state by the aid of the vertical structure, the movable insertion plate arranged in the middle of the vertical culture vessel can be flexibly inserted or taken out to meet the requirements of different experiments, the longitudinal growth length of roots and the horizontal growth state of root systems and stem leaves are conveniently visually observed and compared to facilitate uniform placement of experimental materials such as seeds as scale marks are vertically and horizontally arranged on the outer surface of the vessel body, plant growth is facilitated and moisture condensation inside the vessel is avoided as a filter membrane is arranged on the cover and sufficient oxygen can be supplied to the inside of the vessel, and the vertical culture vessel can be produced in batches, is low and controllable in cost, is easily accepted by users and can really help enormous scientific research, scientific and technical workers.

The present invention relates to a nitride semiconductor thin film and a method for growing the same. The present invention has an advantage in that a plurality of grooves are formed on a substrate by partially etching the substrate, and leg portions for preventing longitudinal growth of a nitride semiconductor are formed within the grooves so that the nitride semiconductor thin film is grown laterally to cover top portions of the leg portions, thereby ensuring growth of a high quality nitride semiconductor thin film.

The invention relates to a mask-assisted method for preparing a porous GaN layer, namely a method for preparing the porous GaN layer through corrosion after manufacturing a mask through photoetching on a gallium nitride (GaN) substrate. According to the method, a bar mask pattern is photoetched on the GaN substrate; a SiO2 thin film is plated on the substrate with the mask pattern by a radio frequency magnetron sputtering method; a photoresist is removed through acetone cleaning; and SiO2 on the photoresist is also removed to obtain a SiO2 bar mask; relatively short GaN epitaxial growth is carried out by HVPE equipment; two technologies are successively adopted in growth; the first technology is relatively high in longitudinal growth ability; the second technology is relatively high in lateral growth ability; the growth time of the two technologies needs to be strictly controlled; and the SiO2 mask is not completely covered by the GaN, so that the porous GaN layer is obtained by corroding the SiO2 with hydrofluoric acid (HF); and with prepared porous GaN layer as a weak layer, the GaN crystal growth technology is further carried out. The method has the technical effects that the prepared porous GaN layer is uniform and can achieve self-peeling by assisting the GaN; and the preparation method is simple and controllable.

The invention belongs to the technical field of agricultural chemical fertilizers, and provides a soil-modifying root-promoting suspension fertilizer. The suspension fertilizer comprises the followingcomponents in parts by weight: 50-200 parts of a soil conditioner, 50-150 parts of a root promoting agent, 1-5 parts of a thickening agent, 220-800 parts of nitrogen-phosphorus-potassium fertilizers,10-200 parts of a medium trace element fertilizer, 0-100 parts of a pH regulator and 50-200 parts of water. According to the invention, physical resistance to growth of crop roots is reduced by improving the soil, and longitudinal growth of the crop root system is induced by the characteristic that a polyphosphate is not easily fixed by soil, so that spatial effectiveness of the fertilizer is improved. According to the invention, application convenience of the soil conditioner is improved, the soil improvement effect is optimized, and the problem that cultivation and conservation of cultivated land are disconnected is solved. The invention also provides a preparation method of the soil-modifying root-promoting suspension fertilizer, the preparation process is simple, equipment investmentis low, the prepared soil-modifying root-promoting suspension fertilizer is high in nutrient utilization efficiency, and obvious yield-increasing and quality-improving effects are achieved.

The invention discloses an HEMT epitaxial structure and a preparation method thereof and belongs to the field of semiconductor photoelectric technologies. A nano-nickel layer has high material activity and can grow well on a substrate, and an AlN layer also can grow well on the nano-nickel layer; and the nano-nickel layer directly growing on the substrate can play a good role in connecting the substrate with the AlN layer, so that the quality of the AlN layer growing on the nano-nickel layer is improved beneficially. Since multiple island structures exist and each island structure has a certain slope, when the AlN layer gradually grows longitudinally, in the direction away from a first surface of the substrate, on the substrate, the AlN layer can grow laterally in the direction parallel tothe first surface at the same time. During longitudinal growth and lateral growth of the AlN layer, dislocation defects in different directions can be generated in the AlN layer; part of the dislocation defects generated during longitudinal growth of the AlN layer can offset part of the dislocation defects generated during lateral growth of the AlN layer; and through reduction of the defects, crystal quality of the AlN layer can be improved, and the quality of a finally obtained HEMT is improved.

The invention discloses a seedling growing method for improving the stress resistance of Chinese cabbage seedlings. The seedling growing method includes pre-treating seeds; preparing bed soil; sowing the seeds; managing seedling beds after the seedlings emerge; preventing and treating plant diseases and insect pests. The seedling growing method has the advantages that moderate water management is matched with water absorption effects of montmorillonite powder and the like in the bed soil, accordingly, the seedlings can keep under low-humidity conditions, transpiration effects can be improved, and calcium and magnesium absorption can be promoted; longitudinal growth of the stems of the seedlings in low-humidity states can be reduced, accordingly, the seedlings are robust, the stress resistance of the Chinese cabbage seedlings can be enhanced, development of the roots of the Chinese cabbage seedlings can be promoted, and the growth performance of the Chinese cabbage seedlings can be improved.

The invention discloses a disbudding-tip-promoting seedling culturing method for tea trees. The disbudding-tip-promoting seedling culturing method for tea trees includes the steps of young seedling culturing; large glass nutrition culturing; lower-position trimming; disbudding tip promoting; greenhouse uncovering seedling exercising. The disbudding-tip-promoting seedling culturing method is a new method capable of promoting tea-tree young-seedling young sprout growth and achieving rapid small-tree-seedling culturing. According to the disbudding-tip-promoting seedling culturing method for tea trees in the technical scheme, the biological characteristics of tea trees are mainly adopted, the growth situation of tea seedlings is changed, longitudinal growth is controlled, cross growth is accelerated, and the number of branches is effectively increased; a young tea seedling can be cultured into a small tea tree with 3 branches to 6 branches in one year, and the aim that the small tea tree is cultured in one year is achieved; the disbudding-tip-promoting seedling culturing method for tea trees can achieve the effect achieved when in the traditional seedling culturing method, young tea seedlings are cultured for one year, then transplanted to a field and planted for half a year, and the total culturing time is one and a half years to two years. The survival rate of a new tea planting garden is greatly increased, early garden forming and early production are achieved, and the invest cost of the new tea planting garden is reduced. The disbudding-tip-promoting seedling culturing method for tea trees is simple, practical, easy to operate and remarkable in effect.

The invention relates to a tissue culture method of a tissue culture seedling of moringa oleifera. The tissue culture method comprises the following steps of (1) selecting experiment materials; (2) specific experiment steps: (2.1) obtaining of a sterile explant: cutting leaves, remaining a terminal bud and interior leaves, remaining a 0.1 to 0.2cm petiole, cutting into 0.5 to 0.8cm stem sections, and remaining 1 to 2 axillarybuds on each section; (2.3) subculture of the moringa oleifera; (2.4) culturing for 21 to 25 days, wherein the height of the longitudinal growth plant is 4.5cm or higher, the side buds of the plant respectively germinate, and the statistic average proliferation ratio reaches 1:6; (2.5) culturing for 18 days in an LM-8 culture medium, wherein the average height of the plant reaches 4cm, the rooting rate reaches 98%, the root length is greater than 2cm, and the number of roots is greater than 3; (2.6) domesticating of the tissue culture seedling: transplanting the rooting tissue culture seedling of the moringa oleifera into a greenhouse, unscrewing a bottle cap, exercising the seedling for 2 to 3 days, and transplanting to a sand bed, wherein the survival rate reaches 95% or above. The tissue culture method has the advantages that the problems of yellowing, crispness and easiness in breaking in the tissue culture process are solved, the expanding propagation and rooting are completed in the bottle at one step, and the cost is reduced by 40% or more.

The invention relates to the technical field of planting, in particular to a method for planting tung trees. The method includes the steps of 1), seed selection and seedling; 2), planting-site management and planting; 3), tending of young growth; 4), shaping and pruning, namely removing tips of tung tree seedlings growing to 1m, promoting a primary branch at about 1 meter, selecting the centermostbranch as a main trunk of a secondary branch for cultivation, promoting the secondary branch at the height of 60-80cm, keeping the centermost branch as a tertiary branch, removing the tips of all ofthe branches when the tertiary branch is completed, controlling longitudinal growth of the branches, and promoting transverse growth; 5), pest control and prevention. With the method, reasonable seedselection, sprouting and seedling management are achieved, high sprouting percentage of the tung trees is achieved, the survival rate is high, nutrients are abundant in all parts of the growth of thetung trees, and good fruit bearing rate of the tung trees is guaranteed.

The invention relates to a method for treating stony desertification by interplanting macadamia nut with milk vetch. The method comprises the following steps of: (1) selection of a parcel; (2) planting of the macadamia nut; (3) pre-treatment of the milk vetch seeds; (4) sowing of the milk vetch; (5) fertilization management of milk vetch; (6) fertilization management of macadamia nuts; (7) watermanagement of macadamia nuts; (8) prevention and control of macadamia nut insect pests; (9) bee releasing; (10) harvesting of green milk vetch; (11) harvesting in good time. According to the method for treating stony desertification by interplanting macadamia nut with milk vetch, a proper amount of borax is added to the disinfectant to promote the longitudinal growth of the root system of the milkvetch and the water and soil conservation effect is good; a proper amount of maltitol is added to the foliage fertilizer, so that the nutrient elements are quickly absorbed and utilized by the milk vetch, and the utilization rate of the fertilizer is high; a proper amount of fulvic acid is added to the foliage fertilizer, so that the root system of the milk vetch can become more developed and thewater-retaining effect is good.

The embodiment of the invention provides an LED growth method for N-type layer coarsening. The method includes the steps that a metal source and ammonia are fed into the upper surface of a substrate, the metal source reacts with the ammonia, and consequently an amorphous buffer layer is formed on the upper surface of the substrate; a non-doping layer grows on the upper surface of the amorphous buffer layer; a high doping N-type layer grows on the upper surface of the non-doping layer, wherein V-shaped pits are formed in the upper surface of the high doping N-type layer and exist in a form of coarsening. A longitudinal growth pattern is adopted to maintain the shape of the V-shaped pits, a low doping N-type layer, a quantum well layer and a P-type layer grow on the upper surface of the high doping N-type layer in sequence, and therefore a complete LED structure is formed. Secondary growth is not needed, the P-type layer does not need to be transformed, and the chip manufacturing process cannot be excessively influenced.

The invention discloses a special apparatus for correcting scoliosis deformity in a growth period, which consists of a growth regulation bar, a sliding vertebral pedicle bolt and a common vertebral pedicle bolt. The special apparatus has the function of automatically sliding to the far end along with the growth of a vertebral column, does not affect the longitudinal growth of the vertebral column, prevents a sick child from suffering from pain of repeated regulation operation, and further improves the curative effect of surgical posterior correction of the scoliosis in the growth period.