Mask-assisted method for preparing porous GaN layer

Abstract

The invention relates to a mask-assisted method for preparing a porous GaN layer, namely a method for preparing the porous GaN layer through corrosion after manufacturing a mask through photoetching on a gallium nitride (GaN) substrate. According to the method, a bar mask pattern is photoetched on the GaN substrate; a SiO2 thin film is plated on the substrate with the mask pattern by a radio frequency magnetron sputtering method; a photoresist is removed through acetone cleaning; and SiO2 on the photoresist is also removed to obtain a SiO2 bar mask; relatively short GaN epitaxial growth is carried out by HVPE equipment; two technologies are successively adopted in growth; the first technology is relatively high in longitudinal growth ability; the second technology is relatively high in lateral growth ability; the growth time of the two technologies needs to be strictly controlled; and the SiO2 mask is not completely covered by the GaN, so that the porous GaN layer is obtained by corroding the SiO2 with hydrofluoric acid (HF); and with prepared porous GaN layer as a weak layer, the GaN crystal growth technology is further carried out. The method has the technical effects that the prepared porous GaN layer is uniform and can achieve self-peeling by assisting the GaN; and the preparation method is simple and controllable.

Description

technical field [0001] The invention relates to a method for preparing a porous GaN layer, in particular to a mask-assisted method for preparing a porous GaN layer. Background technique [0002] Gallium Nitride (GaN) is a semiconductor material with a direct bandgap and a wide bandgap. Photoelectric fields such as ultraviolet detectors and microelectronics fields such as high-temperature, high-power, and high-frequency devices have broad application prospects. The growth of GaN is currently mainly obtained by vapor phase epitaxy using sapphire or other single crystal materials as substrates. Since self-supporting GaN has its unique advantages in device manufacturing, it requires the separation technology of substrate and epitaxial layer. Existing stripping technologies include Corrosion stripping, laser stripping, hydrogen injection stripping and self-stripping, etc. In the process of corrosion stripping, the epitaxial layer will also be eroded. After laser stripping, the s...

AI Technical Summary

Problems solved by technology

The growth of GaN is currently mainly obtained by vapor phase epitaxy using sapphire or other single crystal materials as substrates. Since self-supporting GaN has its unique advantages in device manufacturing, it requires the separation technology of substrate and epitaxial layer. Existing stripping technologies include Corrosion stripping, laser stripping, hydrogen injection stripping and self-stripping, etc. In the process of corrosion stripping, the epitaxial layer will also be eroded. After laser stripping, the stripping interface is rough and the integrity cannot be guaranteed. Hydrogen injection stripping will be limited by the implantation depth, so the current The most commonly used is the self-stripping technique

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