46 results about "Hafnium compounds" patented technology

The invention relates to a method for preparing C/SiC-HfC carbon fiber reinforced ultrahigh-temperature ceramic matrix composite, which comprises the following steps: introducing C organic precursor in C/SiC preform by vacuum pressure impregnation method or directly using C/C perform; combining with reaction melt impregnation method; and reacting silicon hafnium alloy with C to in-situ generate HfC-SiC. The obtained composite has high volume fraction of HfC; generated SiC and HfC have small grains to effectively improve the erosion resistance capability of materials. The method is applicable for composite, in site generates HfC phase in the process of preparing material and increases the volume fraction of hafnium compounds to enhance the erosion resistance capability.

A method of forming a gate insulation film 4 comprising a hafnium silicate material with a SiO₂ equivalent oxide thickness of 1.45 nm or less on a silicon substrate 1 is disclosed. The method includes the steps of: cleaning a surface of the silicon substrate 1 to establish thereon a clean surface on which substantially no oxygen is present; forming a hafnium silicate film 2 on the clean surface of the silicon substrate 1 by a CVD process using an amide type organic hafnium compound and a silicon-containing raw material; applying an oxidation treatment to the hafnium silicate film 2, and applying a nitriding treatment to the hafnium silicate film 2 after applying the oxidation treatment. According to the method, a gate insulation film with favorable surface roughness can be obtained even if the film thickness is thin.

Provided is a novel capacitor film forming material having a high growth rate and excellent step coverage, and obtained is a hafnium-containing film having excellent characteristics as a capacitor film with a high dielectric constant and a low reactivity with Si.

A capacitor film forming material comprising a hafnium oxide film provided in a semiconductor memory device, is a capacitor film forming material in which the forming material comprises the organic hafnium compound of Hf(R¹R²N)₄ or Hf(OR³)_4-n(R⁴)_n and the content of Nb as an inevitable compound is 1 ppm or less.

The object of the present invention is to increase the crystallization temperature of a hafnium compound film which can be effectively used as a high dielectric constant film of a gate oxide film of a MOSFET, for example. A hafnium silicate film is deposited on a substrate by reacting a vapor of a hafnium organic compound with a monosilane gas or a disilane gas in a reaction vessel in a heated vacuum atmosphere. Due to the crystallization restraining effect of silicon, the thus obtained film has a higher crystallization temperature. In another embodiment of the present invention, an oxygen-containing hafnium compound film is annealed in a heated ammonia gas atmosphere. The annealing also increase the crystallization temperature of the oxygen-containing hafnium compound film.

The invention provides a preparation method and application of an HfC ceramic precursor.The preparation method includes the steps of firstly, adding solvent into a reactor, adding organic hafnium compound and cyanamide organic matter, and vacuumizing and drying the reactor; secondly, rising the temperature, performing continuous stirring reaction under the protection of nitrogen atmosphere, and evaporating the reaction products to remove the solvent so as to obtain white solid.The HfC ceramic precursor prepared by the method is high in ceramic yield, good in high-temperature resistance and suitable for being used to prepare high-performance hafnium carbide ceramics and composite materials thereof, and the ultrahigh-temperature HfC component content of the ceramic materials prepared by the HfC ceramic precursor is higher than 79%.

The invention relates to a novel low-oxygen liquid SiHfBCN ceramic precursor and a preparation method thereof. A SiBCN precursor and a hafnium precursor are dissolved in an organic solvent to form a homogeneous solution, a free radical initiator is added, heating is performed to initiate a free radical polymerization reaction of double bonds between the two precursors, and heating or vacuumizing is performed to remove the solvent to obtain viscous liquid, namely a SiHfBCN ceramic precursor. After the SiHfBCN ceramic precursor is subjected to pyrolysis treatment, homogeneous SiHfBCN ceramic canbe obtained. According to the method, the problem of poor solubility of the hafnium precursor is solved, meanwhile, a silicon-hafnium-boron-carbon-nitrogen precursor is prepared through free radicalpolymerization of unsaturated bonds, introduction of an oxygen element is avoided, no byproduct is generated, the preparation process is simple, and the problem that a traditional refractory metal hafnium compound is high in preparation temperature and difficult to sinter is solved.

A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.

Provided is an organic electroluminescent device which comprises an anode, a hole injection layer, a first hole transmission layer, a first luminescent layer, a first electron transmission layer, a charge generation layer, a second hole transmission layer, a second luminescent layer, a second electron transmission layer, an electron injection layer and a cathode which are laminated in turn. The charge generation layer comprises an n-type layer, an intermediate layer and a p-type layer. Material of the n-type layer is a fullerene derivative. Material of the intermediate layer is bipolar metal oxide doped with hafnium compounds. Material of the p-type layer is lanthanide oxide. The aforementioned organic electroluminescent device is relatively high in luminescence efficiency. The invention also provides a preparation method for the organic electroluminescent device.

Provided is an organic electroluminescent device which comprises an anode, a hole injection layer, a first hole transmission layer, a first luminescent layer, a first electron transmission layer, a charge generation layer, a second hole transmission layer, a second luminescent layer, a second electron transmission layer, an electron injection layer and a cathode which are laminated in turn. The charge generation layer comprises an n-type layer, an intermediate layer and a p-type layer. Material of the n-type layer is a fullerene derivative doped with caesium salt. Material of the intermediate layer is a metal doped with hafnium compounds. Material of the p-type layer is hole transmission material doped with bipolar metal oxide. The aforementioned organic electroluminescent device is relatively high in luminescence efficiency. The invention also provides a preparation method for the organic electroluminescent device.

The invention discloses a pyridine amine hafnium compound as well as a preparation method and application thereof. A framework of the pyridine amine hafnium compound is a tert-butyl-substituted pyridine amine hafnium compound, wherein tert-butyl with large steric hindrance is introduced to a bridging framework of the pyridine amine hafnium compound, and the structural formula of the pyridine amine hafnium compound is as shown in formula I, in which, the Ar can be phenyl or naphthyl. The pyridine amine hafnium compound can be used as a main catalyst to catalyze olefin polymerization, not only shows a single active center, but also shows very strong copolymerization ability. The compound can catalyze copolymerization of ethylene, alpha-olefin and polar monomers with high activity, so that a high-performance polyolefin material is prepared.

The invention relates to the technical field of trace metal detection, in particular to an organic hafnium compound content detection pretreatment method which comprises the following steps: adding an organic hafnium compound mother solution into a digestion tank, and heating and concentrating to half in an open manner; cooling the concentrated product to room temperature, adding nitric acid and hydrogen peroxide into the concentrated product, heating, reacting and concentrating to be within 1/3 of the total volume, and cooling to room temperature; adding water into the treated product II, uniformly shaking, transferring to a constant volume into a volumetric flask, performing pretreatment on the sample solution to reduce the content of matrix substances in the sample solution, performing digestion through a system of nitric acid and hydrogen peroxide to destroy organic matters such as organic hafnium compounds in the sample solution so as to reduce background signal interference. The accuracy and the effectiveness of instrument testing are guaranteed, and meanwhile the analysis and detection requirements of various precise instruments such as ICP-MS, ICP-AES and AAS are met.