Etching composition and method for etching a substrate

An etching treatment and composition technology, applied in the field of etching compositions, can solve the problems of no etchant, not ideal, easy to catch fire, etc.

Inactive Publication Date: 2005-09-28
TOSOH CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since most of this etching solution is an organic solvent, it is easy to catch fire, and the semiconductor manufacturing equipment must have an explosion-proof structure, which is not ideal in industry.
[0005] Therefore, the best etchant for hafnium oxide, hafnium silicate, hafnium aluminate, etc. that can be sufficiently selected and processed as high-k materials that are attracting attention as semiconductors has not been seen yet.

Method used

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  • Etching composition and method for etching a substrate
  • Etching composition and method for etching a substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～15、 comparative example 1～3

[0067] Use CVD (chemical vapor growth) method to make HfSiO x Or HfSiO x N y A silicon wafer substrate with a film thickness of 10nm is formed, and a thermal oxide film (SiO x ) A silicon substrate with a thickness of 300 nm and a silicon substrate with SiN formed with a thickness of 100 nm are formed. In addition, the etching compositions described in Table 1 were prepared, and each etching composition was put into a polyethylene container. In the etching composition of Table 1, the remainder is water.

[0068] Etching solution composition (wt%)

Temperature ℃

Etching speed (nm / min)

Fluoride

Chloride

Additives

HfSiOx

HfSiONx

SiOx

SiN

Example 1

AF(0.1)

HCl(10)

80

1.096

1.034

0.120

Example 2

AF(0.1)

HCl(10)

40

0.674

0.880

0.172

Example 3

AF(0.1)

HCl(10)

25

0.384

0.514

0.122

Ex...

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Abstract

This etching composition for etching hafnium compound, includes a fluoride compound and a chloride compound. This method for etching a substrate, includes etching a film which contains hafnium compound and is formed on a substrate by using an etching composition, wherein the etching composition contains a fluoride compound and a chloride compound.

Description

Technical field [0001] The present invention relates to an etching composition for hafnium compounds such as hafnium silicate and hafnium aluminate. More specifically, it relates to an etching composition for etching an insulating film containing hafnium silicate and hafnium aluminate used in semiconductor devices, and A substrate etching method in which a substrate, particularly a film made of a hafnium compound formed on a silicon wafer, is etched. Background technique [0002] In recent years, with the rapid development of information technology, there is a trend to increase the speed of large integrated circuits (LSI, ULSI, VLSI) through miniaturization, high density, and high integration. Therefore, the use of new materials for semiconductor circuits is discussed. With the miniaturization, the insulating film is also becoming thinner, and the use of the silicon oxide insulating film originally used is restricted. Therefore, as a new insulating film, so-called high-k material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08G03F7/004H01L21/00H01L21/311H01L21/44
CPCH01L21/31111H01L21/67086C09K13/08H01L21/30604C11D2111/22
Inventor 原靖高桥史治林博明
Owner TOSOH CORP
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