The present invention provides a cleaning solution for removing etching residues, which includes a fluorine-containing compound, wherein the fluorine-containing compound is selected from the group consisting of fluoride salt, fluoroalkane, hexafluorosilicic acid, hexafluorosilicate, fluorophosphoric acid, hexafluorophosphate, fluoroboric acid, fluoroborate, trifluoromethanesulfonic acid, trifluoromethanesulfonate, fluorosulfonic acid, fluorosulfonate, and any combination of the above. The cleaning solution can improve the effect of removing silicon-containing by-products produced by etching silicon-containing materials such as silicon nitride.