228 results about "Chemical amplification" patented technology

A resist composition includes a polymer principal chain, a carboxyl group having a protective group and bonding to a side chain of the polymer main chain, and an additional acidic functional group having an acid-cleavable protective group and bonding to a side chain of the polymer main chain, wherein the carboxyl group has a lactone structure represented by a formula (wherein n is an integer of 1-4, and R represents any of a hydrogen atom, an alkyl group, an alkoxyl group and an alkoxycarbonyl group and connected to an arbitrary position of said lactone structure excluding a second position forming an ester bonding) as the protective group.

To provide a chemical amplification type positive photoresist composition suited to resist patterning of a substrate presenting surface step differences, a method for manufacturing the semiconductor device employing this composition, and a semiconductor substrate. In a method for manufacturing a semiconductor device, a resist film is formed using a chemical amplification type positive photoresist composition, comprised of a base resin and a basic compound added to the base resin at a rate of 1 to 100 mmol to 100 g of the base resin, on a substrate halving surface step differences and into which the organic removing solution is deposited or oozed, and a predetermined area of the resist film is exposed to light to form a resist pattern.

Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.

The present invention provides a sulfonate of the formula (I'): wherein Q<1>, Q<2>, Q<3>, Q<4 >and Q<5 >each independently represent hydrogen, alkyl having 1 to 16 carbon atoms, alkoxy having 1 to 16 carbon atoms, or electron attractive group, with the proviso that at least one of Q<1>, Q<2>, Q<3>, Q<4 >and Q<5 >represents alkyl having 3 to 16 carbon atoms or alkoxy having 3 to 16 carbon atoms, and at least one of Q<1>, Q<2>, Q<3>, Q<4 >and Q<5 >is electron attractive group; and A'<+> represents a counter ion of the formula (IIa), (IIb), (IIc) or (IId) which are identified in the specification. The present invention also provides a chemical amplification type positive resist composition comprising a sulfonate of the formula (I) wherein A<+> represents counter ion, and Q<1>, Q<2>, Q<3>, Q<4 >and Q<5 >are as defined above;and resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid.

A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.

Substrate heating equipment performs heat treatment after exposure but prior to development to a substrate having a chemical-amplification resist film. The substrate heating equipment is provided with a placing table whereupon the substrate is placed substantially horizontal, with the resist film on top, a fluid supplying mechanism for supplying the substrate with glycerin, and a heating mechanism for heating the substrate on the placing table under the condition where the glycerin is brought into contact with the resist film. In the substrate heating equipment, the substrate on the placing table is heated under the condition where the glycerin is brought into contact with the resist film.

Fluorinated vinyl ethers are provided having the structure of formula (I) the structure of formula (I)wherein at least one of X and Y is a fluorine atom, and L, R1, R2, R3, R4 are as defined herein. Also provided are copolymers prepared by radical polymerization of (I) and a second monomer that may not be fluorinated. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

The present invention provides a resist composition comprising (A) polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with an acid-dissociable dissolution inhibiting group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the acid-dissociable dissolution inhibiting group is eliminated by an action of an acid, and (B) a component capable of generating an acid by irradiation with radiation, wherein a retention rate of the acid-dissociable dissolution inhibiting group of the component (A) after a dissociation test using hydrochloric acid is 40% or less, and also provides a chemical amplification type positive resist composition which contains polyhydroxystyrene in which at least a portion of hydrogen atoms of hydroxyl groups are substituted with a lower alkoxy-alkyl group having a straight-chain or branched alkoxy group, and the solubility in an alkali solution of the polyhydroxystyrene increasing when the lower alkoxy-alkyl group is eliminated by an action of an acid, in place of the component (A).