Product
Patsnap Eureka
For R&D, Patsnap Eureka makes reading and utilizing patents & technical documents easy.
Patsnap Eureka AIR
Designed for self-driven R&D workflows. Generate viable solutions, solve complex R&D challenges, empower your innovation with AI.
Patsnap Eureka Materials
Designed for material experts only. Revolutionize your material R&D, from search, analyze, to developing new materials.
Feature
TechResearch
Generate reliable direction feasibility study reports for your R&D in just a few steps.
TechSeek
Discover and master advanced knowledge NOW. Basics, ideas, possibilities, all at once.
TechMind
As an expert in R&D Theories, TechMind can generates customized viable solutions instantly.
TechRisk
Analyze your overall solution with one click, know your potential R&D risks in advance.
TechMonitor
Get weekly tech updates, stay abreast of the latest tech innovations and key insights.
Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
37results about How to "Low LWR" patented technology
Efficacy Topic
Property
Owner
Technical Advancement
Application Domain
Technology Topic
Technology Field Word
Patent Country/Region
Patent Type
Patent Status
Application Year
Inventor
Sulfonium salt, chemically amplified resist composition, and pattern forming process
ActiveUS20150086926A1Enhance the imageHigh resolutionOrganic chemistryPhotosensitive materialsSulfonatePhysical chemistry
A carboxylic acid sulfonium salt having formula (1) is provided wherein R0 is hydrogen or a monovalent hydrocarbon group, R01 and R02 are hydrogen or a monovalent hydrocarbon group, at least one of R0, R01, and R02 has a cyclic structure, L is a single bond or forms an ester, sulfonate, carbonate or carbamate bond with the vicinal oxygen atom, R2, R3 and R4 are monovalent hydrocarbon groups. The sulfonium salt functions as a quencher in a resist composition, enabling to form a pattern of good profile with minimal LWR, rectangularity, and high resolution.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20170369616A1Highly effective for suppressing acid diffusionHigh sensitivityLaser detailsOrganic chemistryResistSulfonium
A resist composition comprising a base polymer and a sulfonium or iodonium salt of iodized benzoyloxy-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180039173A1Highly effective for suppressing acid diffusionHigh sensitivitySulfonic acids salts preparationPhotomechanical coating apparatusResistSulfonium
A resist composition comprising a base polymer and a sulfonium or iodonium salt of iodinated phenoxy or iodinated phenylalkoxy-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10295904B2High sensitivityLow LWROrganic chemistryPhotomechanical coating apparatusBenzoic acidResist
Owner:SHIN ETSU CHEM IND CO LTD
Novel onium salt compound, resist composition, and pattern forming process
ActiveUS20160131972A1Enhance the imageHigh resolutionOrganic chemistryPhotosensitive materialsResistCarboxylic salt
Sulfonium and iodonium salts of a carboxylate having an aromatic ring to which a nitrogen-containing alkyl or cyclic structure is attached are novel. The onium salt functions as an acid diffusion controlling agent in a resist composition, enabling to form a pattern of good profile with high resolution, improved MEF, LWR and DOF.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180364574A1High sensitivityLow LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusBenzenePolymer science
A resist composition comprising a base polymer and a sulfonium or iodonium salt of brominated benzene-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Radiation-sensitive composition
InactiveUS20100221664A1Excellent basic resist performanceInhibition defectPhotosensitive materialsRadiation applicationsPolymer scienceOrganic group
A radiation-sensitive composition includes (A) a first polymer which becomes alkali-soluble by the action of an acid and does not contain a fluorine atom, (B) a second polymer having a repeating unit (b1) shown by the following formula (1) and a fluorine-containing repeating unit (b2), and (C) a radiation-sensitive acid generator, the content of the second polymer (B) in the composition being 0.1 to 20 parts by mass relative to 100 parts by mass of the first polymer (A).wherein R1 represents a monovalent organic group, and R8 represents a linear or branched alkyl group having 1 to 12 carbon atoms. The composition can form a resist film capable of suppressing defects inherent to liquid immersion lithography such as watermark defects and bubble defects.
Owner:JSR CORPORATIOON
Sulfonium salt, chemically amplified resist composition, and pattern forming process
ActiveUS9221742B2Satisfactory quencher (or diffusion control) functionLeast leachingOrganic chemistryOrganic compound preparationSulfonatePhysical chemistry
Owner:SHIN ETSU CHEM CO LTD
Resist composition and patterning process
ActiveUS20180335696A1High sensitivityLow LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusPolymer scienceFluorosulfuric acid
A resist composition contains a polymer-bound acid generator, specifically a polymer comprising recurring units derived from a sulfonium or iodonium salt having a polymerizable unsaturated bond and containing iodine in the linker between the polymerizable unsaturated bond and a fluorosulfonic acid. The resist composition offers a high sensitivity and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10101653B2Highly effective for suppressing acid diffusionHigh sensitivitySulfonic acids salts preparationPhotomechanical coating apparatusResistSulfonium
Owner:SHIN ETSU CHEM CO LTD
Pattern forming process and resist compostion
ActiveUS20130183621A1High resolutionLow LWRPhotosensitive materialsRadiation applicationsResistCooking & baking
A resist composition is provided comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group, an acid generator, a sulfonium or iodonium salt of fluoroalkanesulfonamide and an organic solvent. A positive pattern is formed by applying the resist composition onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and immersing in an alkaline developer to dissolve away the exposed region of resist film, but not the unexposed region.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20210033970A1Suppressing acid diffusionHigh ability to control acid diffusionPhotosensitive material processingCoatingsPolymer scienceEther
A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbylene group which may contain an ester bond or ether bond and a carboxylate anion having an iodized or brominated hydrocarbyl group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Carboxylic acid onium salt, chemically amplified resist composition, and pattern forming process
ActiveUS10120278B2Satisfactory acid diffusion control (or quencher) functionImprove solubilityOrganic chemistryPhotomechanical coating apparatusImage resolutionCarboxylic acid
Owner:SHIN ETSU CHEM IND CO LTD
Radiation-sensitive composition
InactiveUS8124314B2Improve performanceReduce line widthPhotosensitive materialsRadiation applicationsRadiation sensitivityOrganic group
Owner:JSR CORPORATIOON
Resist composition and patterning process
ActiveUS11181823B2High sensitivityPromote decompositionOrganic chemistryPhotomechanical coating apparatusBenzeneSulfonium
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11281101B2Suppress DiffuseLarge atomic weightOrganic chemistryPhotomechanical exposure apparatusPolymer sciencePolymer chemistry
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11415887B2Suppress DiffuseReduce molecular weightPhotomechanical coating apparatusPhotomechanical exposure apparatusCarboxylic saltCarboxylic acid
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11022883B2High sensitivityLow LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusPolymer scienceFluorosulfuric acid
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20210048748A1Suppressing acid diffusionHigh ability to control acid diffusionPhotomechanical exposure apparatusPhotosensitive material processingPolymer sciencePhenol
A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbylene group and an anion derived from an iodized or brominated phenol offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11460773B2Reduce molecular weightSuppress DiffuseOrganic chemistryPhotomechanical coating apparatusPolymer sciencePolymer
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20200241417A1Suppressing acid diffusionReduce molecular weightOrganic chemistryPhotosensitive material processingPolymer sciencePolymer
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10871711B2High atomic weightGenerate efficientlyPhotosensitive material processingCoatingsBenzenePolymer science
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20200050105A1Suppressing acid diffusionHigh ability to control acid diffusionOrganic chemistryPhotomechanical exposure apparatusPolymer chemistryPhotochemistry
A resist composition comprising a base polymer and a quencher in the form of an amine compound having an iodized aromatic ring bonded to the nitrogen atom via a divalent hydrocarbon group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20200301275A1High dissolution contrastExcellent in ability to insolubilize its exposed portionPhotomechanical exposure apparatusPhotosensitive material processingPolymer scienceOnium
A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and / or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11409194B2High ability to control acid diffusionSuppress DiffuseOrganic chemistryPhotomechanical coating apparatusPolymer chemistryPhotochemistry
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11187980B2High ability to control acid diffusionSuppress DiffusePhotomechanical coating apparatusPhotomechanical exposure apparatusCarboxylic acidAmmonium Cation
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10725378B2High sensitivityLow LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusBenzenePolymer science
Owner:SHIN ETSU CHEM IND CO LTD
Onium salt compound, resist composition, and pattern forming process
ActiveUS9989847B2Enhance the imageHigh resolutionOrganic chemistryPhotomechanical coating apparatusResistNitrogen
Owner:SHIN ETSU CHEM CO LTD
Resist composition and patterning process
ActiveUS10323113B2Highly effective for suppressing acid diffusionHigh sensitivityLaser detailsOrganic chemistryPolymer scienceSulfonium
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and pattern forming process
PendingUS20220155687A1High resolutionLow LWRPhotomechanical exposure apparatusPhotosensitive material processingPolymer scienceOrganic solvent
A resist composition is provided comprising (A) a sulfurane or selenurane compound, (B) an organic solvent, and (C) a base polymer comprising repeat units having an acid labile group. By virtue of the acid diffusion inhibitory function of the compound, the resist composition forms a resist pattern having improved LWR and CDU when it is processed by lithography using high-energy radiation.
Owner:SHIN ETSU CHEM IND CO LTD
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com