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49results about How to "Reduced LWR" patented technology
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(Meth)acrylate compound, photosensitive polymer, and resist composition including the same
A (meth)acrylate compound having a nitrogen-containing cyclic group, a photosensitive polymer, and a resist composition including the same, the (meth)acrylate compound being represented by the following Chemical Formula 1:
Owner:CHEIL IND INC
Method for forming pattern and developer
ActiveUS20120308938A1Excellent resist patternReduce solubilityPhotomechanical exposure apparatusPhotosensitive material processingResistSolubility
A pattern-forming method includes forming a resist film on a substrate using a photoresist composition, exposing the resist film, and developing the exposed resist film using a negative developer that includes an organic solvent. The photoresist composition includes (A) a polymer that includes a structural unit (I) including an acid-labile group that dissociates due to an acid, the solubility of the polymer in the developer decreasing upon dissociation of the acid-labile group, and (B) a photoacid generator. The developer includes a nitrogen-containing compound.
Owner:JSR CORPORATIOON
Resist composition and patterning process
ActiveUS20180267402A1High sensitivityReduce LWRSulfonic acids salts preparationPhotomechanical coating apparatusResistColor tone
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating sulfonic acid bonded to iodized benzene ring offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10295904B2High sensitivityLow LWROrganic chemistryPhotomechanical coating apparatusBenzoic acidResist
A resist composition comprising a base polymer and a sulfonium salt of iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Sulfonium salt, resist composition, and patterning process
ActiveUS20140199629A1Improve diffusion abilityIncrease freedomOrganic chemistryPhotosensitive materialsResistHydrogen atom
The present invention provides a sulfonium salt used in a resist composition that can give a pattern having a high resolution, especially an excellent rectangularity of a pattern form and a small roughness, while not readily generating a defect, in the photolithography using a high energy beam as a light source; a resist composition that contains the sulfonium salt; and a patterning process using this resist composition, wherein the sulfonium salt is shown by the following general formula (1a),wherein each of R and R0 independently represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be optionally substituted by a heteroatom or interposed by a heteroatom.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20170184962A1Increase contrastHigh resolutionSulfonic acids salts preparationPhotomechanical coating apparatusPolymer scienceOrganic chemistry
A resist composition comprising a base polymer and a biguanide salt compound offers a high dissolution contrast, minimal LWR, and dimensional stability on PPD.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20170205709A1High dissolution contrastHigh resolutionOrganic chemistrySemiconductor/solid-state device manufacturingResistDissolution
A resist composition comprising a base polymer and a sulfonium salt capable of generating fluorinated aminobenzoic acid offers a satisfactory dissolution contrast and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180275512A1Suppressed acid diffusionHigh sensitivitySulfonic acids salts preparationPhotomechanical coating apparatusResistBenzoic acid
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating fluorobenzenesulfonic acid bonded to iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20170184964A1Increase contrastHigh resolutionGroup 5/15 element organic compoundsPhotomechanical coating apparatusResistDissolution
A resist composition comprising a base polymer and a phosphazene salt compound offers a high dissolution contrast, minimal LWR, and dimensional stability on PPD.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180335696A1High sensitivityLow LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusPolymer scienceFluorosulfuric acid
A resist composition contains a polymer-bound acid generator, specifically a polymer comprising recurring units derived from a sulfonium or iodonium salt having a polymerizable unsaturated bond and containing iodine in the linker between the polymerizable unsaturated bond and a fluorosulfonic acid. The resist composition offers a high sensitivity and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
InactiveUS20170075218A1High dissolution contrastHigh resolutionPhotomechanical coating apparatusPhotomechanical exposure apparatusResistNitrogen
A resist composition comprising a base polymer and a sulfonium salt of carboxylic acid containing nitrogenous heterocycle offers dimensional stability on PPD and a satisfactory resolution.
Owner:SHIN ETSU CHEM IND CO LTD
Sulfonium salt, polymer, resist composition, and patterning process
ActiveUS20190033716A1Satisfactory profileImprove CDUOrganic chemistryPhotosensitive material processingResistChemistry
A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.
Owner:SHIN ETSU CHEM CO LTD
Radiation-sensitive resin composition, resist pattern-forming method, acid generator and compound
ActiveUS20140342288A1Reduced LWRImprove LWR performanceOrganic chemistryOrganic compound preparationHydrogen atomRadiation sensitivity
The present invention provides a radiation-sensitive resin composition that contains a polymer having a structural unit that includes an acid-labile group; and an acid generator, wherein the acid generator includes a compound including a sulfonate anion having SO3−, wherein a hydrogen atom or an electron-donating group bonds to an α carbon atom with respect to SO3−, and an electron-withdrawing group bonds to a β carbon atom with respect to SO3−; and a radiation-degradable onium cation. The compound preferably has a group represented by the following formula (1-1) or (1-2). In the following formulae (1-1) and (1-2), R1 and R2 each independently represent a hydrogen atom or a monovalent electron-donating group. R3 represent a monovalent electron-withdrawing group. R4 represents a hydrogen atom or a monovalent hydrocarbon group.
Owner:JSR CORPORATIOON
Resist composition and patterning process
ActiveUS10613437B2High sensitivityImproved CDUSulfonic acids salts preparationPhotomechanical coating apparatusPolymer scienceSulfonium
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating sulfonic acid bonded to iodized benzene ring offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Positive resist composition and method of forming resist pattern
A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a1) derived from an acrylate ester having a tertiary alkyl ester-type acid dissociable, dissolution inhibiting group containing an aliphatic monocyclic group and / or an aliphatic branched, tertiary alkyl ester-type acid dissociable, dissolution inhibiting group, and the acid-generator component (B) including an acid generator (B1) having a cation moiety represented by general formula (b′-1) shown below:wherein each of R1 and R2 independently represents a naphthyl group which may have a substituent; and R3 represents an alkyl group or an aryl group exclusive of a naphthyl group.
Owner:TOKYO OHKA KOGYO CO LTD
Sulfonium compound, resist composition, and patterning process
ActiveUS20180059543A1High resolutionReduced LWROrganic chemistryPhotomechanical coating apparatusResistPhotoacid generator
A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10968175B2High sensitivityImproved CDUOrganic chemistryPhotomechanical coating apparatusBenzenePolymer science
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating a brominated benzene-containing sulfonic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS9897914B2Increase contrastHigh resolutionGroup 5/15 element organic compoundsPhotomechanical coating apparatusResistDissolution
A resist composition comprising a base polymer and a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane salt compound offers a high dissolution contrast, minimal LWR, and dimensional stability on PPD.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10613436B2High sensitivityImproved CDUSulfonic acids salts preparationPhotomechanical coating apparatusBenzoic acidPolymer science
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating fluorobenzenesulfonic acid bonded to iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11181823B2High sensitivityPromote decompositionOrganic chemistryPhotomechanical coating apparatusBenzeneSulfonium
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20170108775A1Increase contrastWide focus marginSulfonic acids salts preparationPhotomechanical coating apparatusPolymer scienceMorpholine
A resist composition comprising a base polymer and a sulfonium or iodonium salt of sulfonic acid containing a morpholino group offers dimensional stability on PPD and a satisfactory resolution.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11022883B2High sensitivityLow LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusPolymer scienceFluorosulfuric acid
A resist composition contains a polymer-bound acid generator, specifically a polymer comprising recurring units derived from a sulfonium or iodonium salt having a polymerizable unsaturated bond and containing iodine in the linker between the polymerizable unsaturated bond and a fluorosulfonic acid. The resist composition offers a high sensitivity and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Sulfonium salt, polymer, resist composition, and patterning process
ActiveUS11262653B2Satisfactory profileReduced LWROrganic chemistryPhotomechanical exposure apparatusPolymer scienceSulfonium
Owner:SHIN ETSU CHEM IND CO LTD
Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
ActiveUS11281089B2Forming accuratelyAccurately form fine patternPhotomechanical apparatusSemiconductor/solid-state device manufacturingDevice materialPhysical chemistry
A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.
Owner:HOYA CORP
Photoresist composition, resist pattern-forming method, compound, acid generating agent, and photodegradable base
ActiveUS20140363769A1High resolutionReduced LWROrganic chemistryPhotosensitive materialsResistHydrogen atom
A photoresist composition containing a polymer having a structural unit including an acid-labile group, and a compound represented by the formula (1). In the formula (1), R1 represents a hydrogen atom or a monovalent acid-labile group. R2 represents an alicyclic hydrocarbon group having 3 to 20 carbon atoms and a valency of (m+1). m is an integer of 2 to 5. R3 and R4 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms. n is an integer of 0 to 5. At least two of a plurality of R1 s optionally taken together represent a ring structure, together with a plurality of oxygen atoms bonding to R1 and the carbon atom(s) constituting R2 and bonding to these oxygen atoms. M+ represents a monovalent radiation-degradable onium cation.
Owner:JSR CORPORATIOON
Resist composition and patterning process
ActiveUS10620533B2Increase contrastWide focus marginSulfonic acids salts preparationPhotomechanical exposure apparatusPolymer scienceMorpholine
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS9958776B2Increase contrastHigh resolutionPhotomechanical coating apparatusPhotomechanical exposure apparatusResistDissolution
A resist composition comprising a base polymer and a phosphazene salt compound offers a high dissolution contrast, minimal LWR, and dimensional stability on PPD.
Owner:SHIN ETSU CHEM CO LTD
Sulfonium compound, resist composition, and patterning process
ActiveUS10025180B2High resolutionIncrease contrastOrganic chemistryPhotomechanical coating apparatusResistPhotoacid generator
A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10802400B2Reduce resolutionHigh sensitivityPhotomechanical coating apparatusPhotomechanical exposure apparatusPolymer scienceFluorosulfuric acid
A resist composition comprising a polymer-bound acid generator, i.e., a polymer comprising recurring units derived from a sulfonium or iodonium salt having a brominated linker between a polymerizable unsaturated bond and a fluorosulfonic acid offers a high sensitivity and reduced LWR or improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10520811B2Increase contrastReduced LWRPhotosensitive materials for photomechanical apparatusBenzoic acidPolymer science
A resist composition comprising a base polymer and a quencher in the form of an iodonium salt of fluorinated aminobenzoic acid, fluorinated nitrobenzoic acid or fluorinated hydroxybenzoic acid offers a high dissolution contrast and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM CO LTD
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