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50results about How to "Improved CDU" patented technology
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Resist composition and patterning process
ActiveUS20180267402A1High sensitivityReduce LWRSulfonic acids salts preparationPhotomechanical coating apparatusResistColor tone
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating sulfonic acid bonded to iodized benzene ring offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20170369616A1Highly effective for suppressing acid diffusionHigh sensitivityLaser detailsOrganic chemistryResistSulfonium
A resist composition comprising a base polymer and a sulfonium or iodonium salt of iodized benzoyloxy-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180039173A1Highly effective for suppressing acid diffusionHigh sensitivitySulfonic acids salts preparationPhotomechanical coating apparatusResistSulfonium
A resist composition comprising a base polymer and a sulfonium or iodonium salt of iodinated phenoxy or iodinated phenylalkoxy-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180275512A1Suppressed acid diffusionHigh sensitivitySulfonic acids salts preparationPhotomechanical coating apparatusResistBenzoic acid
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating fluorobenzenesulfonic acid bonded to iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180364574A1High sensitivityLow LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusBenzenePolymer science
A resist composition comprising a base polymer and a sulfonium or iodonium salt of brominated benzene-containing fluorinated sulfonic acid offers a high sensitivity and minimal LWR or improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180335696A1High sensitivityLow LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusPolymer scienceFluorosulfuric acid
A resist composition contains a polymer-bound acid generator, specifically a polymer comprising recurring units derived from a sulfonium or iodonium salt having a polymerizable unsaturated bond and containing iodine in the linker between the polymerizable unsaturated bond and a fluorosulfonic acid. The resist composition offers a high sensitivity and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Sulfonium salt, polymer, resist composition, and patterning process
ActiveUS20190033716A1Satisfactory profileImprove CDUOrganic chemistryPhotosensitive material processingResistChemistry
A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.
Owner:SHIN ETSU CHEM CO LTD
Resist composition and patterning process
ActiveUS10101653B2Highly effective for suppressing acid diffusionHigh sensitivitySulfonic acids salts preparationPhotomechanical coating apparatusResistSulfonium
Owner:SHIN ETSU CHEM CO LTD
Monomer, polymer, resist composition, and patterning process
ActiveUS10915021B2High sensitivityImproved CDUOrganic chemistryPhotomechanical exposure apparatusPolymer scienceEther
A monomer having formula (A) is provided. RA is H, methyl or trifluoromethyl, X1 is a single bond, ether, ester or amide bond, Ra is a C1-C20 monovalent hydrocarbon group, Rb is H or an acid labile group, X is halogen, n is an integer of 1 to 4, m is an integer of 0 to 3, and 1≤n+m≤4. A resist composition comprising a polymer derived from the monomer has a high sensitivity to high-energy radiation, especially EUV.
Owner:SHIN ETSU CHEM CO LTD
Resist composition and patterning process
ActiveUS10613437B2High sensitivityImproved CDUSulfonic acids salts preparationPhotomechanical coating apparatusPolymer scienceSulfonium
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating sulfonic acid bonded to iodized benzene ring offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Monomer, polymer, resist composition, and patterning process
ActiveUS20190079399A1High sensitivityImproved CDUOrganic chemistryPhotomechanical exposure apparatusPolymer scienceEther
A monomer having formula (A) is provided. RA is H, methyl or trifluoromethyl, X1 is a single bond, ether, ester or amide bond, Ra is a C1-C20 monovalent hydrocarbon group, Rb is H or an acid labile group, X is halogen, n is an integer of 1 to 4, m is an integer of 0 to 3, and 1≤n+m≤4. A resist composition comprising a polymer derived from the monomer has a high sensitivity to high-energy radiation, especially EUV.
Owner:SHIN ETSU CHEM IND CO LTD
Lithographic apparatus and device manufacturing method
ActiveUS7259829B2CDU for a given substrate can be improvedImproved CDUPhotomechanical apparatusPhotographic printingEngineeringCritical dimension
A lithographic apparatus is provided that uses an array of individually controllable elements to pattern the beam of radiation. The critical dimension uniformity of a substrate patterned using the apparatus is improved by adjusting the pattern data provided to the array of individually controllable elements to compensate for process variation.
Owner:ASML NETHERLANDS BV +1
Resist composition and patterning process
ActiveUS10968175B2High sensitivityImproved CDUOrganic chemistryPhotomechanical coating apparatusBenzenePolymer science
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating a brominated benzene-containing sulfonic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20210033970A1Suppressing acid diffusionHigh ability to control acid diffusionPhotosensitive material processingCoatingsPolymer scienceEther
A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbylene group which may contain an ester bond or ether bond and a carboxylate anion having an iodized or brominated hydrocarbyl group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10613436B2High sensitivityImproved CDUSulfonic acids salts preparationPhotomechanical coating apparatusBenzoic acidPolymer science
A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating fluorobenzenesulfonic acid bonded to iodized benzoic acid offers a high sensitivity and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
PendingUS20210055652A1Promote decompositionMinimal LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusPolymer scienceSulfonium
A resist composition comprising a base polymer and an acid generator containing a sulfonium salt which is structured such that an iodized or brominated hydrocarbyl group (exclusive of iodized or brominated aromatic ring) is bonded to a benzene ring via an ester bond-containing group offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11181823B2High sensitivityPromote decompositionOrganic chemistryPhotomechanical coating apparatusBenzeneSulfonium
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20190324368A1High sensitivityMinimal LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusBenzeneResist
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11281101B2Suppress DiffuseLarge atomic weightOrganic chemistryPhotomechanical exposure apparatusPolymer sciencePolymer chemistry
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11415887B2Suppress DiffuseReduce molecular weightPhotomechanical coating apparatusPhotomechanical exposure apparatusCarboxylic saltCarboxylic acid
A resist composition comprising a base polymer and a quencher in the form of a salt of a cyclic ammonium cation with a carboxylate, sulfonamide, halogenated phenoxide or halide anion offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11022883B2High sensitivityLow LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusPolymer scienceFluorosulfuric acid
A resist composition contains a polymer-bound acid generator, specifically a polymer comprising recurring units derived from a sulfonium or iodonium salt having a polymerizable unsaturated bond and containing iodine in the linker between the polymerizable unsaturated bond and a fluorosulfonic acid. The resist composition offers a high sensitivity and improved CDU independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Sulfonium salt, polymer, resist composition, and patterning process
ActiveUS11262653B2Satisfactory profileReduced LWROrganic chemistryPhotomechanical exposure apparatusPolymer scienceSulfonium
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20210048748A1Suppressing acid diffusionHigh ability to control acid diffusionPhotomechanical exposure apparatusPhotosensitive material processingPolymer sciencePhenol
A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbylene group and an anion derived from an iodized or brominated phenol offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11460773B2Reduce molecular weightSuppress DiffuseOrganic chemistryPhotomechanical coating apparatusPolymer sciencePolymer
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20200241417A1Suppressing acid diffusionReduce molecular weightOrganic chemistryPhotosensitive material processingPolymer sciencePolymer
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS10871711B2High atomic weightGenerate efficientlyPhotosensitive material processingCoatingsBenzenePolymer science
A resist composition is provided comprising a base polymer containing an iodized polymer, and an acid generator containing a sulfonium salt and / or iodonium salt of iodized benzene ring-containing fluorosulfonic acid. When processed by lithography, the resist composition exhibits a high sensitivity, low LWR and improved CDU independent of whether it is of positive tone or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20200050105A1Suppressing acid diffusionHigh ability to control acid diffusionOrganic chemistryPhotomechanical exposure apparatusPolymer chemistryPhotochemistry
A resist composition comprising a base polymer and a quencher in the form of an amine compound having an iodized aromatic ring bonded to the nitrogen atom via a divalent hydrocarbon group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11156916B2High sensitivityEffective diffusionPhotomechanical coating apparatusPhotomechanical exposure apparatusBenzenePolymer science
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11409194B2High ability to control acid diffusionSuppress DiffuseOrganic chemistryPhotomechanical coating apparatusPolymer chemistryPhotochemistry
A resist composition comprising a base polymer and a quencher in the form of an amine compound having an iodized aromatic ring bonded to the nitrogen atom via a divalent hydrocarbon group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS11187980B2High ability to control acid diffusionSuppress DiffusePhotomechanical coating apparatusPhotomechanical exposure apparatusCarboxylic acidAmmonium Cation
A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a divalent hydrocarbon group and a carboxylate, fluorine-free sulfonamide, sulfonamide or halide anion offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
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