Product
Patsnap Eureka
For R&D, Patsnap Eureka makes reading and utilizing patents & technical documents easy.
Patsnap Eureka AIR
Designed for self-driven R&D workflows. Generate viable solutions, solve complex R&D challenges, empower your innovation with AI.
Patsnap Eureka Materials
Designed for material experts only. Revolutionize your material R&D, from search, analyze, to developing new materials.
Feature
TechResearch
Generate reliable direction feasibility study reports for your R&D in just a few steps.
TechSeek
Discover and master advanced knowledge NOW. Basics, ideas, possibilities, all at once.
TechMind
As an expert in R&D Theories, TechMind can generates customized viable solutions instantly.
TechRisk
Analyze your overall solution with one click, know your potential R&D risks in advance.
TechMonitor
Get weekly tech updates, stay abreast of the latest tech innovations and key insights.
Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
35 results about "Bipolar transistor biasing" patented technology
Efficacy Topic
Property
Owner
Technical Advancement
Application Domain
Technology Topic
Technology Field Word
Patent Country/Region
Patent Type
Patent Status
Application Year
Inventor
Bipolar transistors must be properly biased to operate correctly. In circuits made with individual devices (discrete circuits), biasing networks consisting of resistors are commonly employed. Much more elaborate biasing arrangements are used in integrated circuits, for example, bandgap voltage references and current mirrors. The voltage divider configuration achieves the correct voltages by the use of resistors in certain patterns. By selecting the proper resistor values, stable current levels can be achieved that vary only little over temperature and with transistor properties such as β.
Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch
A symmetrical blocking transient voltage suppressing (TVS) circuit for suppressing a transient voltage includes an NPN transistor having a base electrically connected to a common source of two transistors whereby the base is tied to a terminal of a low potential in either a positive or a negative voltage transient. The two transistors are two substantially identical transistors for carrying out a substantially symmetrical bi-directional clamping a transient voltage. These two transistors further include a first and second MOSFET transistors having an electrically interconnected source. The first MOSFET transistor further includes a drain connected to a high potential terminal and a gate connected to the terminal of a low potential and the second MOSFET transistor further includes a drain connected to the terminal of a low potential terminal and a gate connected to the high potential terminal.
Owner:ALPHA & OMEGA SEMICON LTD
Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch
A symmetrical blocking transient voltage suppressing (TVS) circuit for suppressing a transient voltage includes an NPN transistor having a base electrically connected to a common source of two transistors whereby the base is tied to a terminal of a low potential in either a positive or a negative voltage transient. The two transistors are two substantially identical transistors for carrying out a substantially symmetrical bi-directional clamping a transient voltage. These two transistors further include a first and second MOSFET transistors having an electrically interconnected source. The first MOSFET transistor further includes a drain connected to a high potential terminal and a gate connected to the terminal of a low potential and the second MOSFET transistor further includes a drain connected to the terminal of a low potential terminal and a gate connected to the high potential terminal.
Owner:ALPHA & OMEGA SEMICON LTD
High-order temperature compensation band-gap reference circuit free of bipolar transistors
ActiveCN106774592AHigh inhibition ratioHigh precisionElectric variable regulationSub thresholdNegative temperature
The invention provides a high-order temperature compensation band-gap reference circuit free of bipolar transistors. The high-order temperature compensation band-gap reference circuit free of the bipolar transistors comprises a front adjuster circuit, a first-order band-gap reference circuit, a low-temperature zone temperature sectional compensation circuit, a high-temperature zone temperature sectional compensation circuit and a starting circuit; a first-order band-gap reference voltage is obtained by adopting a negative-temperature-coefficient voltage VCTAT produced by a grid-source voltage of a sub-threshold NMOS (N-channel metal oxide semiconductor) transistor and a positive-temperature-coefficient voltage VPTAT produced by difference between grid-source voltages of two sub-threshold NMOS transistors, low-temperature zone temperature sectional compensation voltages (VNL1 and VNL2) and high-temperature zone temperature sectional compensation voltages (VNL3 and VNL4) are introduced into the first-order band-gap reference voltage produced by the first-order band-gap reference circuit, a band-gap reference voltage with low temperature coefficient is obtained, and a power supply rejection ratio of band-gap reference is increased with a front adjuster technology, so that the high-order temperature compensation band-gap reference circuit free of the bipolar transistors is obtained.
Owner:重庆医之舟信息科技有限公司
Low noise resistorless band gap reference
The junction difference used for a band gap voltage reference is designed so that it has the needed temperature coefficient without amplification. This is accomplished by the appropriate choice of the number of junctions and the appropriate current densities. Only one polarity of bipolar transistors is required. The noise terms of each junction add in root mean square, rather than be linear amplification, resulting in a lower noise reference than other designs requiring only a single type of bipolar transistors. By using metal available in standard integrated circuit processes to form a resistor, a low temperature coefficient current source can easily be obtained.
Owner:MARSH DOUGLAS G +1
Bias circuit for a bipolar transistor
InactiveUS20050218991A1High frequency amplifiersAmplifier modifications to reduce temperature/voltage variationEngineeringElectrical and Electronics engineering
The bias circuit of the present invention can be configured for extremely stiff biasing for Class A circuits, which is solid under heavy RF input overdrive. Alternatively, the circuit may be configured for controlled self biasing for use in Class AB designs.
Owner:ROKE MANOR RES LTD
Bias circuits
The invention provides a bandgap voltage reference circuit and a bias circuit in a temperature probe, which comprises a pair of transistors (Q1, Q2). The first transistor (Q1) of the transistors (Q1, Q2) is biased with emitter current Ibias, and the second transistor is biased with the current of m times of the emitter current mIbias. The circuit is set so that difference of the base-emitter voltage of the transistor is partially produced on both ends of a first resistor device of Rbias used for carrying bias current equal to Ibias, and difference of the base-emitter voltage of the transistor is partially produced on both ends of a second resistor with the resistance substantially equal to Rbias / m and used for carrying the current equal to the base current of the second transistor. Resultantly, when an emitter through a liner bipolar transistor biases the lining bipolar transistor, the bias current Ibias which is substantially the collected current of PTAT produced therefrom, and the base-emitter voltage substantially independent of the forward current gain of the liner bipolar transistor are used.
Owner:VLSI TECH LLC
Method for extracting parameters of bipolar transistor and equivalent circuit of bipolar transistor
ActiveCN102254065AOvercoming the problem that only one operating point parameter of a bipolar transistor can be extractedOvercoming DC parametersTransistorSpecial data processing applicationsCapacitanceHemt circuits
The invention discloses a method for extracting parameters of a bipolar transistor and an equivalent circuit of the bipolar transistor. The method comprises the following steps: performing direct current test and S parameter test on the bipolar transistor; and performing curve fitting by use of ADS (Application Development System) software and origin software so as to acquire parameters of the bipolar transistor. The equivalent circuit established based on the method for extracting the parameters of the bipolar transistor comprises three inductors, five capacitors, six resistors and an intrinsic module BJT (Bipolar Junction Transistor), wherein the intrinsic module BJT comprises two resistors, three charge controls and three current controls. The method can be used for establishing bipolar transistor equivalent circuits suitable for circuits in different conditions, and also can be used for establishing the bipolar transistor equivalent circuit for high-frequency circuits. The bipolartransistor equivalent circuit established based on the method can reflect the device characteristics of a group of working points of the bipolar transistor, and can be used for circuit simulation of different situations; and the equivalent circuit can reflect the high frequency characteristic of the bipolar transistor, and can be used for high frequency circuit simulation.
Owner:陕西半导体先导技术中心有限公司
Low noise resistorless band gap reference
The junction difference used for a band gap voltage reference is designed so that it has the needed temperature coefficient without amplification. This is accomplished by the appropriate choice of the number of junctions and the appropriate current densities. Only one polarity of bipolar transistors is required. The noise terms of each junction add in root mean square, rather than by linear amplification, resulting in a lower noise reference than other designs requiring only a single type of bipolar transistors. By using metal available in standard integrated circuit processes to form a resistor, a low temperature coefficient current source can easily be obtained.
Owner:MARSH DOUGLAS G +1
Method for measuring collector and emitter breakdown voltage of bipolar transistor
A collector current and a ratio of current amplification which are to measure a punch through breakdown voltage (BVCEO) of a vertical bipolar transistor device are indicated as IC and hFE. A base current IB having 1% of IC / hFE or less is caused to flow to a base of the device. In the state in which the base current IB is injected into a base terminal, a constant voltage (VE) of a ground potential is applied to an emitter terminal and a voltage sweep is performed with a predetermined step width over a collector terminal. When the collector current reaches the current IC to measure the punch through breakdown voltage, the voltage sweep is stopped to measure the punch through breakdown voltage as a collector voltage VC. Consequently, a collector and emitter punch through breakdown voltage of the bipolar device can be accurately measured, and furthermore, the device can be prevented from breaking down when measuring the punch through breakdown voltage.
Owner:NEC ELECTRONICS CORP
CMOS reference voltage source without Bipolar transistors
ActiveCN105468085AHigh rejection ratioEliminate the effects of temperature changesElectric variable regulationElectricityHemt circuits
The invention discloses a CMOS reference voltage source without Bipolar transistors. The CMOS reference voltage source comprises a starting circuit which is connected between a power source (VDD) and the ground (GND) in parallel, a CTAT voltage generating circuit, a PTAT voltage generating circuit and a current superposed circuit; the output end of the starting circuit is connected with the CTAT voltage generating circuit and used for making the reference voltage source break away from a degeneracy bias point when a power source powers up; the output end of the CTAT voltage generating circuit is connected with the current superposed circuit; the output end of the PTAT voltage generating circuit is connected with the current superposed circuit; the current superposed circuit is used for superposing a current generated in the CTAT voltage generating circuit and a current generated in the PTAT voltage generating circuit, so that a current source having the zero temperature drift is obtained, and the current source generates the reference voltage (Vref) through an active subcircuit. By the adoption of the CMOS reference voltage source with the mentioned composition, BJT and diodes are not used, influence of temperature variation can be eliminated, complete compatibility with a standard CMOS process is achieved, system cost is effectively lowered, and the CMOS reference voltage source has the advantages of being extremely low in power consumption, high in power supply rejection ratio and good in performance.
Owner:GUILIN UNIV OF ELECTRONIC TECH
Bipolar transistor with collector surge voltage protection
InactiveUS6013941AOperation speed is not reducedImprove operationSemiconductor/solid-state device detailsSolid-state devicesParasitic bipolar transistorParasitic capacitance
A semiconductor device provided with a planar bipolar transistor and a built-in ingredient acting as an element to protect the bipolar transistor from an external surge voltage e.g. an electrostatic surge voltage and the like, is provided with a planar bipolar transistor further provided with a doped region having a conductivity opposite to that of a semiconductor substrate in which the foregoing planar bipolar transistor is produced, the doped region being produced along the top surface of the semiconductor substrate at a location close to the bipolar transistor, and the emitter of the bipolar transistor being connected the doped region and a fixed potential (VEE) or the ground potential, whereby the operation speed of a circuit including the transistor is not reduced by potential parasitic capacitors which otherwise accompany the built-in ingredients produced to protect the transistor from an external surge voltage e.g. an electrostatic surge voltage and the like.
Owner:LAPIS SEMICON CO LTD
Emitter Ballasting by Contact Area Segmentation in ESD Bipolar Based Semiconductor Component
Integrated circuits (ICs) utilize bipolar transistors in electro-static discharge (ESD) protection circuits to shunt discharge currents during ESD events to protect the components in the ICs. Bipolar transistors are subject to non-uniform current crowding across the emitter-base junction during ESD events, which results in less protection for the IC components and degradation of the bipolar transistor. This invention comprises multiple contact islands (126) on the emitter (116) of a bipolar transistor, which act to spread current uniformly across the emitter-base junction. Also included in this invention is segmentation of the emitter diffused region to further improve current uniformity and biasing of the transistor. This invention can be combined with drift region ballasting or back-end ballasting to optimize an ESD protection circuit.
Owner:TEXAS INSTR INC
Bias circuit for a bipolar transistor
InactiveUS7288992B2High frequency amplifiersAmplifier modifications to reduce temperature/voltage variationHemt circuitsEngineering
The bias circuit of the present invention can be configured for extremely stiff biasing for Class A circuits, which is solid under heavy RF input overdrive. Alternatively, the circuit may be configured for controlled self biasing for use in Class AB designs.
Owner:ROKE MANOR RES LTD
Bipolar transistors with low parasitic losses
InactiveUS7569872B1Reduce decreaseReduce parasitic capacitanceSemiconductor devicesHeterojunctionParasitic capacitance
Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base contact area is deactivated. This results in a drastic reduction of the base-collector parasitic capacitance, Cbc. An embodiment of the present invention provides a transistor architecture for which the base contact area can be decoupled from the collector and hence allows for dramatic reduction in the parasitics of transistors.
Owner:HRL LAB
Semiconductor protection device
InactiveUS7045877B2Inhibit deteriorationIncrease chip areaTransistorSolid-state devicesHeterojunctionEngineering
The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Q1 to Q5 and a second group of a protection circuit having a plurality of bipolar transistors.
Owner:RENESAS TECH CORP
Method for measuring current amplification factor of bipolar transistor
ActiveCN101825681ASolve the problem of wrong resultsElectrical measurement instrument detailsIndividual semiconductor device testingProbe cardJunction point
The invention provides a method for measuring the current amplification factor of a bipolar transistor. Test probes for testing are selected from a probe card; the test probes are connected with a tester, probe-connecting points corresponding to the like test probes on the probe card are connected with tester-connecting points through wires, and the wires are straightly connected with the probe-connecting points and the tester-connecting points, and are not entangled; the test probes are contacted with the emitter and the collector of the bipolar transistor; the tester and the probe card apply voltage on the emitter E and the collector C of the bipolar transistor, the tester real-timely measures emitter current IE, collector current IC and base current IB under each voltage value applied on the emitter E, and the current amplification factor is obtained according to the obtained collector current IC and base current IB. The method can accurately measure the current amplification factor of a bipolar transistor with a high current amplification factor.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Measurement method of base resistance of bipolar transistor
ActiveCN101696992AThe resistance reachesAccurate measurementResistance/reactance/impedenceElectrical resistance and conductanceDelta-v
The invention provides measurement structure and method of a base resistance of a bipolar transistor. The measurement method comprises the steps of: designing a plurality of bipolar transistor measurement structures with different emitter region widths b; in measurement, zero-offsetting an emitter electrode and a collector electrode of each measurement structure, connecting four metal leading outterminals of a base by using a testing Kelvin resistance mode, applying an excitation current I and measuring a voltage drop Vbb; fitting a curve by using Delta Vbb / I as ordinates and Delat b / L as abscissas according to the formula of Delta Vbb / I=Rsh*Delta b / L+Rlink, wherein L is the effective length of an emitter region, slope of the curve is an intrinsic square resistance Rsh of a base and intercept is a connecting resistance Rlink of the base; zero-offsetting the emitter region and a collector region of each measurement structure, respectively applying voltages of Vbe+Delta V and Vbe-DeltaV to the two metal leading out terminals closest to the emitter region, measuring the current I flowing through the base; and fitting a curve according to the formula of 2Delta V / Delta I=Rsh*Delta b / L+Rx, wherein the intercept is a non-intrinsic resistance Rx of the base. The base contact resistance is Rx-Rlink.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Method for measuring collector area intrinsic square resistance of bipolar transistor
The invention provides a method for measuring collector area intrinsic square resistance of a bipolar transistor. The bipolar transistor comprises a launch area, a base area and a collector area; wherein the launch area comprises the launch area metal primer, the base area comprises the base area metal primer, and the collector area comprises two collector area metal primers. When measuring, keeping zero voltage bias by the launch area, applying a first voltage Vbe to the base area; respectively applying a second voltage Vce+DeltaV and a third voltage Vce-DeltaV to the two collector metal primers of the the collector area, and measuring the electric current I which passes through the collector area; repeating the step a and the step b at a plurality of bipolar transistors of the collectorarea with the same length LC and the different widths Wc; according to the values of the length LC, the width Wc and the electric current I of the collector area, based on a formula 2DeltaV / DeltaI=Rsh*Lc / DeltaWc+Rx, fitting a curve by taking Lc / DeltaWc as horizontal ordinate and 2DeltaV / DeltaI as longitudinal coordinate, wherein the gradient of the curve is the collector area intrinsic square resistance Rsh, and the intercept distance is the extrinsic resistance Rx of the collector area.
Owner:GRACE SEMICON MFG CORP
Switch power supply and divider therefor
ActiveCN102437735ASimple structureLow costDc-dc conversionElectric variable regulationPower flowEngineering
The invention discloses a divider for a switch power supply, which comprises four groups of bipolar transistor sets, wherein an output current and an input current of the divider have the following relationship, wherein if I1 is a current signal corresponding a sampling signal of a linear voltage peak value signal, a formula of Iout_min=(n*I3 / beta)m is obtained according to the relationship among a base current, a collector current and an emitter current of the bipolar transistor, wherein beta is an amplification factor of the bipolar transistor sets, and m is the cascade quantity of bipolar transistors in the bipolar transistor sets. Known from the expression of Iout_min and Iout_max, the higher the linear voltage is, the lower the n is, and the smaller the Iout_min and the Iout_max are, thus the divider for the switch power supply has a function of online compensation. Therefore, a linear voltage compensation circuit does not need to be additionally arranged in the switch power supply, circuit structure is simplified and cost is reduced.
Owner:BCD (SHANGHAI) MICRO ELECTRONICS LTD
High speed cross-point switch using SiGe HBT technology
InactiveUS6984870B2High dielectric lossReduce dielectric lossSolid-state devicesSemiconductor/solid-state device manufacturingElectromagnetic fieldSilicon
A high-speed cross-point switch is built on a preferably silicon substrate and uses bipolar transistor switching elements. Preferably, the bipolar transistors are SiGe bipolar junction transistors. Intersecting conductive input and output microstrips are preferably thinned at their intersections to reduce shunt capacitance between the coupled lines. It is also preferred that the input buffer be connected in cascode fashion with the switching transistors in order to create an amplification stage. The signal and its inverse are carried on balanced microstrip pairs in order to reduce electromagnetic field strength at the center of the balanced line pairs thereby improving isolation between two crossing balanced pairs.
Owner:COBHAM DEFENSE ELECTRONICS SYST CORP
Bipolar transistor self-exciting Buck-Boost converter
ActiveCN101877535BSimple structureReduce the numberDc-dc conversionElectric variable regulationInductorCapacitor
A bipolar transistor self-exciting Buck-Boost converter comprises a PNP transistor Q1, an inductor L1, a diode D1 and a capacitor C2 which form a main circuit of the Buck-Boost converter and also comprises a PNP transistor Q2, wherein the emitting electrode of the PNP transistor Q1 is connected with the positive terminal of direct current input voltage Vi; the junction of the inductor L1 and the diode D1 is connected with the collecting electrode of the PNP transistor Q1; the emitting electrode and the collecting electrode of the PNP transistor Q2 are respectively connected with the emitting electrode and the base electrode of the PNP transistor Q1; the base electrode of the PNP transistor Q1 is also connected to the negative terminal of direct current input voltage Vi by a resistor R1; series branch circuits of a resistor R2 and a resistor R3 are connected at the two ends of the emitting electrode and the collecting electrode of the Q1 in parallel; and the junction of the resistor R2and the resistor R3 is connected with the base electrode of the PNP transistor Q2. The converter has simple circuit structure, a few of components and widened application range.
Owner:金湖县农副产品营销协会
Bipolar transistors with low-resistance emitter contacts
InactiveUS6893933B2Reduce resistanceSuperior currentSemiconductor/solid-state device manufacturingSemiconductor devicesElectrical resistance and conductanceManufacturing technology
Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high electrical resistance that poses an obstacle to improving switching speed and current gain of bipolar transistors. Current fabrication techniques involve high temperature procedures that melt desirable low-resistance substitutes, such as aluminum, during fabrication. Accordingly, one embodiment of the invention provides an emitter contact structure that includes a polysilicon-carbide layer and a low-resistance aluminum, gold, or silver member to reduce emitter resistance. Moreover, to overcome manufacturing difficulties, the inventors employ a metal-substitution technique, which entails formation of a polysilicon emitter, and then substitution or cross-diffusion of metal for the polysilicon.
Owner:MICRON TECH INC
Differential input for ambipolar devices
Differential input pairs have been used in analog electronics with both CMOS and bipolar transistors for many years. Conventional designs for differential input pairs, though, may not be suitable for emerging technology transistors, such as graphene transistors, carbon nanotube (CNT) transistors, or other ambipolar transistors. Here, a differential input pair has been provided that uses ambipolar transistors, which accounts for the more unusual I-V (drain current to gate-source voltage) characteristics of ambipolar transistors.
Owner:TEXAS INSTR INC
A bandgap reference with low offset voltage and high psrr
ActiveCN105320205BReduces the impact of channel length modulation effectsLower Offset VoltageElectric variable regulationElectrical resistance and conductanceEngineering
A bandgap reference source having a low offset voltage and a high PSRR comprises: a first P tunnel field-effect transistor (MP1), a second P tunnel field-effect transistor (MP2), a third P tunnel field-effect transistor (MP3), a fourth P tunnel field-effect transistor (MP4), a first resistor (R1), a second resistor (R2), a third resistor (R3), a first bipolar transistor (Q1), a second bipolar transistor (Q2) and a voltage feedback circuit (10). The bandgap reference source having a low offset voltage and a high PSRR reduces the influence of tunnel length adjustment effect among various current mirrors, ensures the accuracy of a current multiplication factor, and thus reduces the offset of the output voltage by using a two-layer current mirror structure and increasing offset resistance.
Owner:STATE GRID CORP OF CHINA +1
Emitter ballasting by contact area segmentation in ESD bipolar based semiconductor component
ActiveUS8866263B2TransistorSemiconductor/solid-state device detailsDiffusion currentDischarge current
Integrated circuits (ICs) utilize bipolar transistors in electro-static discharge (ESD) protection circuits to shunt discharge currents during ESD events to protect the components in the ICs. Bipolar transistors are subject to non-uniform current crowding across the emitter-base junction during ESD events, which results in less protection for the IC components and degradation of the bipolar transistor. This invention comprises multiple contact islands (126) on the emitter (116) of a bipolar transistor, which act to spread current uniformly across the emitter-base junction. Also included in this invention is segmentation of the emitter diffused region to further improve current uniformity and biasing of the transistor. This invention can be combined with drift region ballasting or back-end ballasting to optimize an ESD protection circuit.
Owner:TEXAS INSTR INC
A kind of insulated gate bipolar transistor drive protection circuit
ActiveCN103346763BReliable shutdownImprove reliabilityElectronic switchingTransistor circuitsControl circuit
The invention provides an insulated gate bipolar transistor drive protective circuit. The protective circuit mainly comprises a VB+ power source, a VB- power source, an insulated gate bipolar transistor IGBT, an input impulse control circuit, an optocoupler P1, a primary amplifying circuit, a secondary amplifying circuit, a Vce monitoring protective circuit and an output circuit. The output circuit is mainly composed of a bipolar transistor circuit and a power source circuit and can output positive 15V impulse voltage and negative 15V impulse voltage. The positive 15V impulse voltage and the negative 15V impulse voltage output by the output circuit can enable the insulated gate bipolar transistor IGBT to be effectively communicated under different conditions of communication rising time and cutoff falling time. On application occasions with high interference, the negative 15V impulse voltage provided by the output circuit can enable the insulated gate bipolar transistor IGBT to be cut off reliably, and working reliability of the insulated gate bipolar transistor IGBT is improved.
Owner:SHANDONG UNIV
Complementary bipolar SRAM
InactiveUS20160343427A1Reduce processing stepsSemiconductor/solid-state device manufacturingDigital storageEngineeringLogic state
A complementary lateral bipolar SRAM device and method of operating. The device includes: a first set and second set of lateral bipolar transistors forming a respective first inverter device and second inverter device, the first and second inverter devices being cross-coupled for storing a logic state. In each said first and second set, a first bipolar transistor is an PNP type bipolar transistor, and a second bipolar transistor is an NPN type bipolar transistor, each said NPN type bipolar transistor having a base terminal, a first emitter terminal, a second emitter terminal, and a collector terminal. Emitter terminals of the PNP type transistors of each first and second inverter devices are electrically coupled together and receive a first applied wordline voltage. The first emitter terminals of each said NPN transistors of said first inverter and second inverter devices are electrically coupled together and receive a second applied voltage. The second emitter terminal of one NPN bipolar transistor of said first inverter is electrically coupled to a first bit line conductor, and the second emitter terminal of the NPN bipolar transistor of said second inverter device is electrically coupled to a second bit line.
Owner:INT BUSINESS MASCH CORP
FET-bipolar transistor combination
ActiveCN106684073BReduce parasitic capacitanceIntegrated highTransistorSolid-state devicesDriving currentEngineering
The present disclosure relates to FET-bipolar transistor combinations. A transistor switching device is provided which exhibits relatively good voltage capability and relatively easy drive requirements to turn the device on and off. This reduces transient drive currents that can upset other components.
Owner:ANALOG DEVICES INT UNLTD
Real-time Measurement Method of Junction Temperature of Bipolar Transistor Working in Amplified Region
ActiveCN106771942BSimple methodReduce mistakesIndividual semiconductor device testingIcing conditionsJunction temperature
Owner:BEIJING UNIV OF TECH
Esd protection circuits
ActiveCN101517671BSmall sizeReduce capacitanceSolid-state devicesSemiconductor/solid-state device manufacturingDistributed amplifierArtificial transmission line
Owner:RGT UNIV OF CALIFORNIA
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com