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Real-time Measurement Method of Junction Temperature of Bipolar Transistor Working in Amplified Region

A bipolar transistor, real-time measurement technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problem of inaccurate measurement results, and achieve the effect of simple method and small error

Active Publication Date: 2019-06-07
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the electrical method is mostly used for measurement. The commonly used switching electrical method will cause delays and make the measurement results inaccurate; the non-switching electrical method is to measure in real time without introducing test current when the device is working, and the measurement results are more accurate.

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  • Real-time Measurement Method of Junction Temperature of Bipolar Transistor Working in Amplified Region
  • Real-time Measurement Method of Junction Temperature of Bipolar Transistor Working in Amplified Region
  • Real-time Measurement Method of Junction Temperature of Bipolar Transistor Working in Amplified Region

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Embodiment Construction

[0037] The present invention will be described in more detail below in conjunction with the accompanying drawings and specific embodiments.

[0038] S1. Put the bipolar transistor in the incubator, and the pins are connected to a transistor parameter tester through wires, such as AgilentB1500. Set the temperature of the incubator such as 40, 60, 80, 100, 120, 140, 160, and 180°C. When the temperature of the incubator reaches the set temperature And keep it stable for a period of time, the emitter is grounded, the collector is respectively applied with constant voltage such as 5V, 10V, 20V, 30V, and the base is respectively applied with pulse current such as 50μA-13.45mA, the step size is 50μA, measured at different temperatures I ce , I be , V be .

[0039] S2, process the data of the measured transistor, and make the ce = 20V different current I ce conditions corresponding to V be and temperature T graph see figure 1 , made at I ce = 200mA different voltage V ce condit...

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Abstract

The invention relates to a real-time junction temperature measuring method for a bipolar transistor working in an amplification zone, and belongs to the field of semiconductor device test. A Vbe-T relation curve between an emitter junction voltage and a temperature when the bipolar transistor works in different collector junction voltage Vce and collector currents Ice conditions is measured, a function expression of a temperature adjusting curve is obtained by fitting, and an Ice-Vbe-T junction temperature library is constructed under the different collector junction voltage Vce conditions. When the transistor works in the amplification zone, the electrification condition, namely values of the collector junction voltage Vce and the collector current Ice, as well as the emitter junction voltage Vbe measured in real time is substituted into the function expression to obtain the junction temperature in the moment. According to the method, the temperature adjusting curve under different electrification conditions is obtained by fitting, the corresponding function expression is obtained, and the junction temperature in the moment can be obtained by substituting the emitter junction voltage Vbe measured in real time into the function expression; and the real-time junction temperature measuring method is scientific and reasonable, low in errors and high in efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor device testing, and is mainly applied to the real-time measurement of the junction temperature of bipolar transistors working in the amplification region. Background technique [0002] With the continuous increase of the working power of semiconductor devices, the heat generated by the device will continue to increase, and the junction temperature will increase, resulting in a decrease in the life of the device. Therefore, the junction temperature is an important indicator of the reliability of the semiconductor device. Junction temperature is very important. Bipolar transistors are widely used in many fields such as military affairs, aerospace and industry because of their amplifying effects; therefore, it is particularly important to be able to accurately measure the junction temperature of transistors operating in the amplifying region. At present, the electrical method is mostly used for measurem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2619
Inventor 郭春生丁嫣姜舶洋冯士维苏雅
Owner BEIJING UNIV OF TECH
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