42results about How to "Thickness does not affect" patented technology

The invention relates to a flexible display panel and a manufacturing method thereof and a display device and aims at solving the problem of abnormal display due to the fact that an internal film layer easily generates a crack after colliding with a hard object, of an existing flexible display panel. The flexible display panel comprises a flexible substrate, various functional film layers arranged on the flexible substrate and at least one support post, wherein the various functional film layers comprise multiple organic layers; the support post is arranged in at least one organic layer; the support posts are arranged in non-pixel light-emitting areas of the flexible display panel; and the material hardness of various support posts is greater than that of the corresponding organic layers on which the support posts are located, and the heights are not greater than the thicknesses of the corresponding organic layers on which the support posts are located. The support posts of which the heights are not greater than the thicknesses of the corresponding organic layers on which the support posts are located are arranged in the non-pixel light-emitting areas of the organic layers, so that normal display of the display panel and the thicknesses of the organic layers are affected, and meanwhile, the internal film layer can be prevented from generating the crack due to collision with the hard object, thereby improving the anti-collision ability of the display panel.

The invention belongs to the field of planting machinery and provides a grafting machine, which consists of a work table, a cutting engagement device and a seedling positioning device. The invention also provides a grafting method adopting the grafting machine. The seedling grafting machine has the beneficial effects that 1, the grafting mechanization is realized, and the problems of high work intensity and low work efficiency of artificial grafting are solved; 2, when the grafting machine provided by the invention is adopted, the cutting surfaces of stocks and cions are precisely aligned, at least one side of the forming layer is aligned, and the grafting survival rate is high; and 3, a wax coating mode is adopted for fixing the cutting surface combining part of the stocks and the cions, the wound infection is avoided, in addition, the seedling thickness increase is not influenced, and the binding rope unlocking treatment after the traditional grafting is omitted.

The invention discloses a ray detection substrate, a manufacturing method therefor, and a ray detection device, and belongs to the technical field of display. The ray detection substrate comprises a substrate, and the substrate is provided with a photodiode. The photodiode comprises two doping layers and an intrinsic layer, wherein the intrinsic layer is located between the two doping layers, and the arrangement direction of the two doping layers is parallel to the substrate. According to the invention, the substrate solves a problem that the performance of an X-ray detection device is poorer, improves the performance of the X-ray detection device, and is used for the ray detection device.

The invention relates to a method of removing pollutant on the surface of the standard wafer. The surface of the standard wafer is provided with a membrane layer; the standard wafer is baked at a temperature of 50 DEGC to 350 DEGC , which can wipe off the pollutant particles on the surface of standard wafer and keep the measured value of the thickness of the membrane stable. The invention also provides a method for revising the equipment for measuring the thickness of the membrane; the influence of the change of the thickness of the standard wafer on the measuring result, which ensures the accuracy and stability of the measuring result and is favorable to detecting the change of the performance of the membrane measuring equipment.

The invention belongs to the technical field of lithium ion batteries and particularly relates to a flexibly-packaged lithium ion battery, which has high energy density and excellent power performance. The flexibly-packaged lithium ion battery comprises a cell, a package bag and electrolyte, wherein the package bag is used for holding the cell and the electrolyte is filled into the package bag. The cell consists of a positive plate, a negative plate and a membrane which are wound, two ends of the positive plate are provided with an inner positive tag and an outer positive tag respectively, and the inner positive tag and the outer positive tag are connected electrically through a tag adapter terminal after being wound. Compared with the prior art, the inner positive tag and the outer positive tag at two ends of the positive plate are packaged in parallel, internal resistance of the battery can be reduced more, flow distribution can be realized during large-current battery charging, the integral thickness and the body length of the lithium ion battery cannot be affected by parallel package of the inner positive tag and the outer positive tag, and accordingly, the energy density of the lithium ion battery can be guaranteed while power performance can be improved.

The invention discloses a trench gate MOSFET, comprising an inner region and an edge region, wherein the edge region is located at the edge of the conduction region for leading out the gate structureof each cell in the conduction region; A first trench is formed in the inner region, and a second trench having a width equal to or greater than the first trench is formed in the edge region. Forminga first gate dielectric layer on the inner side surface of each first trench, and forming a second gate dielectric layer having a thickness greater than the first gate dielectric layer on the inner side surface of the second trench; Each of the first and second trenches is filled with a polysilicon gate, and each polysilicon gate is connected to the gate through a contact hole formed in the top ofthe polysilicon gate of the second trench. The invention also discloses a manufacturing method of a trench gate MOSFET. The invention can improve the withstand voltage ability of the edge region andcause the breakdown of the device to occur in the inner region, thereby improving the shock resistance of the device.

The invention discloses a trench-gate power MOSFET. The thicknesses of first gate dielectric layers in trenches in an internal region and second gate dielectric layers in the trenches in an edge region are independently set; and the thicknesses of the second gate dielectric layers are greater than those of the first gate dielectric layers. A threshold voltage of a device is adjusted through the thicknesses of the first gate dielectric layers; the electric field strength in the edge region is reduced and the voltage-withstand capability of the edge region is improved by increasing the thicknesses of the second gate dielectric layers; breakdown of the device is demanded in the internal region; and the impact resistance of the device is improved. The invention further discloses a manufacturing method of the trench-gate power MOSFET. The breakdown voltage of the device can be improved; and the anti-UIS impact ability of the device is improved. Independent adjustment of the thicknesses of the first gate dielectric layers and the second gate dielectric layers is achieved by source injection lithography; and an extra lithography process is not needed, so that the process cost is not increased.

The invention discloses a dielectric waveguide filter which comprises a plurality of dielectric resonators, wherein at least two dielectric resonators are connected by an H-shaped coupling structure to form capacitive coupling; the H-shaped coupling structure comprises a structure main body; the structure main body is oppositely provided with a deep groove and a shallow groove; both sides of the H-shaped coupling structure are respectively connected with two dielectric resonators; the H-shaped coupling structure is simple in structure, low process requirements and easy to produce and debug; athickness of a middle part of the H-shaped coupling structure is decided by depths of two grooves together, and even though both sides of the H-shaped coupling structure are ground to different degrees, the thickness of the middle part is also not influenced, so that the thickness of the middle part is easier to control, consistency of the product is improved and meanwhile, the size of the capacitive coupling can be regulated by regulating widths of both the sides and the thickness of the middle of the H-shaped coupling structure; and relative to an existing blind hole, the deep groove and theshallow groove have the advantages of increase of openings, large area, contribution to reduction of the metallization process difficulty and convenience for batch production of the dielectric waveguide filter.

The invention discloses a carbon-ceramic brake disc with a wear-resistant and anti-oxidation coating and a preparation method of the carbon-ceramic brake disc. The preparation method comprises the following steps that grooving treatment is conducted on the upper surface and the lower surface of a carbon / carbon composite material disc body, then coating slurry is brushed in a groove in the upper surface till the groove in the upper surface is filled with the coating slurry, and then the carbon / carbon composite material disc body is turned over, the groove in the lower surface is coated with the coating slurry till the groove in the lower surface is filled with the coating slurry, thus the carbon / carbon composite material disc body containing the coating slurry is obtained, curing, carbonization and ceramization treatment are sequentially conducted, and the carbon-ceramic brake disc is obtained. The preparation process of the wear-resistant and oxidation-resistant coating is simple, large-scale industrial mass production is easy to realize, the coating is bright and smooth in appearance, the bonding strength between the coating and the disc body is high, the size precision is easy to accurately control, and the problem that the size is easy to control inaccurately when the ceramic brake disc is subjected to machining treatment can be effectively solved.

An image sensing module (M) includes an image sensing unit (1), a light transmitting unit (2), a substrate unit (3) and lens unit (4). The image sensing unit (1) includes an image sensing element (10) having an image sensing area (100) on the top side of the image sensing element (10). The light transmitting unit (2) includes a light transmitting element (20) supported above the image sensing element (10) by a plurality of support members (21). The substrate unit (3) includes a flexible substrate (30) disposed on the image sensing element (10) and electrically connected to the image sensing element (10) through a plurality of electrical conductors (31), and the flexible substrate (30) has at least one through opening (300) for receiving the light transmitting element (20). The lens unit (4) includes an opaque holder (40) disposed on the flexible substrate (30) to cover the light transmitting element (20) and a lens assembly (41) connected to the opaque holder (40) and disposed above the light transmitting element (20).

The invention discloses a method for detecting a circuit board based on three-dimensional characteristics. The method comprises the following steps: acquiring three-dimensional coordinate data on each position of the detected circuit board; extracting each three-dimensional characteristic value according to the three-dimensional coordinate data on each position; judging if each three-dimensional characteristic value meets a standard value; and when the three-dimensional characteristic value does not meet the standard value, confirming the position corresponding to the three-dimensional characteristic value as a defect position. According to the scheme, the three-dimensional coordinate data on each point of the circuit board is collected, treated, compared and analyzed, so that the detecting result is acquired and the defects of all the circuit boards can be detected; the method is not influenced by the environments of oxidation, smudge, and the like; the false detecting rate or false reporting rate caused by the environmental influence is effectively reduced; besides, the sunken defect and the blind hole which cannot be detected by a traditional automatic optical detector can be detected.

The invention relates to a light-emitting diode grain. The light-emitting diode grain comprises a first semiconductor layer, an active layer, a second semiconductor layer as well as a transparent conducting layer which are successively arranged, wherein the transparent conducting layer comprises a first transparent conducting layer and a second transparent conducting layer, and the first transparent conducting layer and the second transparent conducting layer are both made of indium oxide tin material; and the oxygen content of the first transparent conducting layer is lower than that of the second transparent conducting layer, and the thickness of the first transparent conducting layer is less than that of the second transparent conducting layer. The invention also relates to a manufacturing method of the light-emitting diode grain.

The invention provides a miniature inductor. The miniature inductor comprises a magnetic core and a coil, wherein the coil comprises a supporting body and a distribution line, the supporting body is of a barrel-shaped structure, the distribution line is spirally arranged on the supporting body, and the magnetic core is arranged on the inner side of the supporting body. The miniature inductor is excellent in comprehensive performance, easy to manufacture and low in cost. The invention further provides a manufacturing method of the miniature inductor.

The invention belongs to the field of planting machinery and provides a grafting machine, which consists of a work table, a cutting engagement device and a seedling positioning device. The invention also provides a grafting method adopting the grafting machine. The seedling grafting machine has the beneficial effects that 1, the grafting mechanization is realized, and the problems of high work intensity and low work efficiency of artificial grafting are solved; 2, when the grafting machine provided by the invention is adopted, the cutting surfaces of stocks and cions are precisely aligned, at least one side of the forming layer is aligned, and the grafting survival rate is high; and 3, a wax coating mode is adopted for fixing the cutting surface combining part of the stocks and the cions, the wound infection is avoided, in addition, the seedling thickness increase is not influenced, and the binding rope unlocking treatment after the traditional grafting is omitted.

The invention relates to the technical field of tree transplantation, in particular to a landscaping tree fixing and straightening device and a using method thereof. The landscaping tree fixing and straightening device comprises a burying assembly, a support rod assembly and an abutting assembly, the burying assembly comprises a cylindrical pre-buried pile, the upper end of the pre-buried pile isrotatably connected with a support rod, a torsion spring is arranged at the rotating junction between the pre-buried pile and the support rod, and the abutting assembly includes an arc-shaped abuttingplate which can be rotated relative to the upper end of the support rod. The pre-buried pile is adopted as a stressed support point; when the abutting plate is stressed, through transmission of the support rod, an acting force is performed on the abutting plate to counteract a rotating force of the torsion spring and then applied to the pre-buried pile to support and fix a tree. At the same time,the abutting plate can be rotated relative to the support rod so that the support plate can adapt to different rotation angles and still fit the tree. Therefore, after the tree is thickened, only thematching angle of the support rod and the pre-buried pile is changed, and thickening of the tree cannot be affected.

The invention discloses a tight-buffered optical fiber and a making method thereof. The tight-buffered optical fiber comprises an optical fiber body, a separation layer and a tight buffer layer; the surface of the optical fiber body is coated with the separation layer, and the tight buffer layer is disposed on the periphery of the separation layer; the separation layer is used for spacing the optical fiber body from the tight buffer layer to avoid adhesion between the tight buffer layer and the optical fiber body. The separation layer made of a special material is disposed between the opticalfiber body and the tight buffer layer to serve as a separating agent and a lubricating agent between the optical fiber body and the tight buffer layer, so that the tight buffer layer is easy to separate and slide relative to the optical fiber body, the peeling force is reduced, damage to the optical fiber body is avoided, and the product performance is improved.

The invention relates to the technical field of communication, in particular to a mobile phone, a signal receiving device and a manufacturing method of the signal receiving device. The signal receiving device comprises a shrapnel, a PCB (printed circuit board) and an antenna, wherein the PCB is provided with a signal processing element, the surface of the PCB is concavely provided with a shrapnel accommodating part, the shrapnel is arranged in the shrapnel accommodating part and comprises a fixed end and a free end, the fixed end is fixed relative to the PCB, and is communicated with the signal processing element through an electric signal, the free end is elastically abutted against the antenna, and the signal received by the antenna is transmitted to the signal processing element through the shrapnel. The PCB is provided with the shrapnel accommodating part, and the shrapnel is arranged in the shrapnel accommodating part, when the shrapnel is abutted against the antenna, the shrapnel is hidden in the shrapnel accommodating part of the PCB by utilizing the thickness of the PCB, the signal processing element processes the outside wireless signals received by the antenna through the shrapnel, and the overall thickness of the mobile phone is not influenced by the thickness of the shrapnel, so that the overall thickness of the mobile phone is favorably reduced.

The invention provides an optimization method of a fixed layer in an MTJ structure. The optimization method comprises the following steps: reducing the thickness of a magnetic layer of the fixed layer; the magnetic moment of each magnetic layer is adjusted such that the bias field of the fixed layer at the free layer conforms to a set value. Compared with the prior art, the optimization method of the fixed layer in the MTJ structure provided by the invention can reduce the thickness of the fixed layer on the basis of not influencing the overall stability of the MTJ structure, thereby reducing the etching damage of the MTJ. Experimental results show that on one hand, the optimization method of the fixed layer in the MTJ structure reduces MTJ etching damage, and meanwhile, the stability of the reference layer is not affected; and on the other hand, the thickness of the whole storage unit is reduced, so that the etching time is favorably reduced, and more choices of photoetching and hard mask (HM) are provided for expanding to a small size.

The invention discloses a glass hollow slabimitating crystal crushed stones and a manufacturing method thereof, and belongs to the field of hollow slabs.According to the glass hollow slabimitating thecrystal crushed stones,a light reinforcing frame consists of a plurality of transversely and longitudinally connected ribs, a plurality of lightening through holes are formed between the several ribs; a uniform broken particle layer is arranged in the position, matching with the position of the ribs, on one side of a broken glass surface plate,an irregular broken particle layer is arranged in theposition, matching with the positions of the lightening through holes, on one side of the broken glass surface plate, the uniform broken particle layer is adhered to one sides of the ribs, and the irregular broken particle layer is located in the lightening through holes. Through thearrangement of the light reinforcing frame,aslab bodyhas sufficient strength and is light in overall weight, meanwhile, the ribs of the lightreinforcing frame are adhered to the broken glass surface plate, uniform glass particles with small particlediameter are arranged in the positions of the ribs, broken glass with different thicknesses can be arranged in the lightening through holes without affecting the thickness of the slab body, and at the same time, the broken glass is better in three-dimensional layering and more beautiful.

The invention discloses a high-performance computer CPU radiator. The radiator comprises a CPU heat-conducting fin, a heat-conducting strip, a cooling fin, a fan shell, a fan motor and a fan impeller.The CPU heat-conducting fin is detachably fixed on the upper surface of the CPU. One end of the heat conduction strip is fixed on the upper end surface of the CPU heat conduction sheet, and the otherend of the heat conduction strip is detachably connected with the heat dissipation sheet. The heat dissipation sheet is positioned at an air outlet of the fan shell, the fan motor is arranged in thefan shell, and the fan impeller is fixedly arranged on a rotating shaft of the fan motor. Compared with the prior art, heat dissipation is conducted through the heat conduction structure and the thinturbine type draught fan, the heat dissipation efficiency is high, the thickness is small, the thickness of the notebook computer is not affected, the thickness can be kept small, the heat dissipationefficiency is guaranteed, and the application and popularization value is achieved.

The invention provides application of a preparation method of a nitrogen-doped graphene@metal material in the field of metal corrosion prevention. The preparation process of the nitrogen-doped graphene@metal material comprises the following steps of raw material placement, reaction condition setting, growth and post-treatment. According to the preparation method of the nitrogen-doped graphene@metal material for growing large-area few-layer nitrogen-doped graphene through small molecules, a carbon source and a nitrogen source are provided through the aromatic small molecule compound, the large-area few-layer nitrogen-doped graphene is grown on a metal substrate, the growth temperature is 300-500 DEG C, the performance of the metal substrate is well preserved at the temperature, the prepared nitrogen-doped graphene is mostly in a single-layer mode, the quality of the nitrogen-doped graphene is high, the corrosion resistance of the prepared nitrogen-doped graphene@metal material is obviously superior to that of an original metal material, and the service life is prolonged.

The invention discloses a novel elevator conveying chain which comprises a pin roll and two inner chain plates respectively sleeved on two ends of the pin roll, wherein an outer chain plate is sleeved on the outer side of one of the two inner chain plates, an assembly plate is sleeved on the outer side of the other one of the two inner chain plate, a shaft sleeve which is coaxial to the pin roll and has the same diameter with the pin roll is arranged between the two inner chain plates, one end of the pin roll is connected with the outer chain plate through a fixed pin, the pin roll is used for connecting the inner chain plates, the outer chain plate and the assembly plate through the shaft sleeve, and an outer chain plate is additionally arranged between the inner chain plate connected with the assembly plate and the assembly plate. According to the conveying chain, the structure of the chain is improved, the operation speed and strength of the chain are improved, the service life of the chain is prolonged, the cost is saved, the labor intensity is reduced, the normal operation of the production is ensured, and the production efficiency is increased.

The invention provides a functional module and electronic equipment, and the functional module comprises a protection layer; a packaging layer which is connected with the protective layer, wherein a preset chip and a connecting wire are arranged in the packaging layer; and a connecting layer which is connected with the packaging layer, a step-shaped structure sunken towards the connecting layer isarranged at the end corner, away from the connecting layer, of the preset chip, the first end of the connecting wire is connected with the step-shaped structure, and the second end of the connectingwire is connected with the connecting layer; wherein the maximum distance value between a point on the connecting line and the connecting layer is smaller than or equal to the maximum distance value between the upper surface of the preset chip and the connecting layer; wherein the upper surface of the preset chip is the surface, deviating from the connecting layer, of the preset chip. According tothe scheme, the function of the functional module is not influenced while the thickness of the packaging layer is reduced, so that the reduction of the thickness of the functional module is better realized.

The invention discloses a manufacturing method of a flip LED chip with enhanced anti-EOS capability, and the method is characterized in that in the LED manufacturing process, the influence of the thickness of secondary electrode evaporation on the voltage brightness is not large, so that the thickness is usually selected to be 0.5-1 [mu] m in order to reduce the cost; research finds that the second electrode evaporation thickness is too small, and the anti-EOS capability is easy to be weak. According to the method provided by the invention, the anti-EOS capability of the LED chip is greatly improved, the probability of EOS events is reduced and the service life of the LED chip is prolonged under the condition that the photoelectric property is not influenced by increasing the thickness of the metal lamination of the second metal electrode evaporation.

The application discloses a radiation detection substrate, a manufacturing method thereof, and a radiation detection device, which belong to the field of display technology. The radiation detection substrate includes: a base substrate, on which a photodiode is arranged, the photodiode includes two doped layers and an intrinsic layer, the intrinsic layer is located between the two doped layers, and the two doped layers The arrangement direction is parallel to the base substrate. The application solves the problem of poor performance of the X-ray detection device and improves the performance of the X-ray detection device, and the application is used for the X-ray detection device.

A method for removing pollutants on the surface of a standard wafer, the surface of the standard wafer has a film layer, the standard wafer is baked at a temperature of 50°C to 350°C, and the pollutant particles on the surface of the standard wafer can be removed, Hold the film thickness measurements on the standard wafer to stabilize. The present invention also provides a method for calibrating the film thickness measurement equipment, which can ensure the accuracy and stability of the measurement results by eliminating the influence of the change of the standard wafer thickness on the test results, and is also conducive to the detection and detection of the film layer measurement Device performance changes.