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Method for clearing pollutant on standard wafer surface and emendation method for depth-measuring device

A standard wafer and contaminant technology, used in cleaning methods and utensils, chemical instruments and methods, semiconductor/solid-state device testing/measurement, etc., can solve problems such as inability to accurately reflect the stability of inspection equipment and unstable thickness inspection results. , to achieve the effect of maintaining stability and simple process

Inactive Publication Date: 2009-07-22
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The problem solved by the present invention is that the standard wafer in the prior art continuously absorbs pollutant particles in the environment, resulting in a continuous increase in thickness, resulting in unstable thickness detection results, which cannot accurately reflect the defects of the stability of the detection equipment

Method used

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  • Method for clearing pollutant on standard wafer surface and emendation method for depth-measuring device
  • Method for clearing pollutant on standard wafer surface and emendation method for depth-measuring device
  • Method for clearing pollutant on standard wafer surface and emendation method for depth-measuring device

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Embodiment 1

[0031] Reference attached figure 1 As shown, it is a schematic diagram of the structure of a standard wafer, in which 11 is a semiconductor substrate, and the standard wafer 11 can be a blank wafer or a wafer with a silicon oxide layer formed on its surface at any stage of the semiconductor process , such as a wafer with multiple film layers or multiple device layers but the surface layer is a silicon oxide layer. The wafer is pure semiconductor silicon or doped semiconductor silicon, and may also be semiconductor materials such as silicon-on-insulator or germanium. 12 is a film layer on the semiconductor substrate, and the film layer 12 can be various insulating materials such as oxides, nitrides, and oxynitrides, and can also be semiconductor materials such as polycrystalline silicon and monocrystalline silicon. The present invention is more suitable for The most important are insulating materials such as oxides such as silicon oxide.

[0032] Since the standard wafer is ...

Embodiment 2

[0047] The present invention also provides a method for calibrating film thickness measurement equipment, including the following steps, referring to the attached Figure 5 , step 101, provide a standard wafer, the surface of the standard wafer has a film layer; step 102, detect the thickness of the film layer and set it as a standard value; step 103, the standard wafer at 50 ℃ to 350 Baking under the temperature condition of ℃; step 104, correcting the film thickness measurement equipment, placing the baked standard wafer into the film measurement equipment to measure its thickness, if the measured thickness does not match the standard value, correct the film thickness measurement equipment Until the measured thickness is the same as the standard value.

[0048] The standard wafer described in this embodiment refers to the description in Example 1. At first, the film thickness on the standard wafer is detected and set as a standard value. After that, the standard wafer is hea...

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Abstract

A method for removing pollutants on the surface of a standard wafer, the surface of the standard wafer has a film layer, the standard wafer is baked at a temperature of 50°C to 350°C, and the pollutant particles on the surface of the standard wafer can be removed, Hold the film thickness measurements on the standard wafer to stabilize. The present invention also provides a method for calibrating the film thickness measurement equipment, which can ensure the accuracy and stability of the measurement results by eliminating the influence of the change of the standard wafer thickness on the test results, and is also conducive to the detection and detection of the film layer measurement Device performance changes.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a method for removing pollutants on the surface of a standard wafer and a calibration method for thickness measuring equipment. Background technique [0002] With the continuous development of the semiconductor industry, the semiconductor manufacturing process has entered the nanometer era. In order to adapt to the trend of smaller and smaller electronic products and stronger functions, the line width in the semiconductor process has also been developed from the original 0.18 micron to the present. The 0.13 micron or even 90nm process. Along with the trend of chip functions becoming more powerful and components becoming smaller and smaller, the technical requirements for various links in the process are getting higher and higher. As the components are getting smaller and the internal circuits are getting more and more complex, the process is more sensitive to subtle changes in various...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/66B08B7/00
Inventor 王小勇严博陈淑美吕秋玲
Owner SEMICON MFG INT (SHANGHAI) CORP
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