Application of preparation method of nitrogen-doped graphene@metal material in field of metal corrosion prevention
A technology of nitrogen-doped graphene and metal materials, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of high pollution, thick anti-corrosion coating, high toxicity, etc., and achieve high quality , comprehensive coverage and low cost effect
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[0024] The present invention provides an application of a method for preparing nitrogen-doped graphene@metal material in the field of metal anticorrosion. The preparation process of nitrogen-doped graphene@metal material includes the following steps:
[0025] Place raw materials: provide a storage chamber and a growth chamber, the storage chamber communicates with the growth chamber, place a metal growth substrate in the growth chamber, and place growth materials in the storage chamber;
[0026] Set the reaction conditions: vacuumize both the storage chamber and the growth chamber to below 10Pa, then connect the storage chamber with a protective gas, the protective gas is introduced from the storage chamber and discharged from the growth chamber, and the protective gas is set. The flow rate of the inert gas is 50-400sccm, and the internal pressure of the holding chamber and the growth chamber is maintained at 20-200Pa;
[0027]Growth: adjust the temperature in the growth chamb...
Embodiment 1
[0043] Step A: Put a growth substrate polycrystalline copper foil with a thickness of 25 μm in the growth chamber of the CVD tube furnace, place the growth raw material aniline in the upwind position of the growth chamber, and connect the growth chamber to the vacuum system. The upwind direction is connected to the protective gas source (argon), and the downwind direction is connected to the vacuum pump.
[0044] Step B: Vacuum the growth system until the air pressure is below 8Pa, and set the growth temperature at 400 degrees Celsius. At this temperature, most of the metal substrates have a certain catalytic reduction ability. Below 500 degrees Celsius, the C-N bonds of aniline molecules can be maintained, which is conducive to the growth of nitrogen-doped graphene. Set the argon gas flow rate to 200 sccm, and maintain the internal pressure of the growth chamber at 70 Pa. Under lower pressure, the molecules of the raw material have relatively free mobility, which is conducive...
Embodiment 2
[0048] Step A: Insert a growth substrate single crystal copper with a thickness of 0.5 mm into the growth chamber of the CVD tube furnace, place the growth raw material methylaniline in the upwind position of the growth chamber, and connect the growth chamber to a vacuum System, the upwind direction is connected to the protective gas source (argon), and the downwind direction is connected to the vacuum pump.
[0049] Step B: Vacuum the growth system until the air pressure is below 8Pa, and set the growth temperature at 350 degrees Celsius. At this temperature, most of the metal substrates have a certain catalytic reduction ability. Below 500 degrees Celsius, the C-N bonds of methylaniline molecules can be maintained, which is conducive to the growth of nitrogen-doped graphene. Set the argon gas flow rate to 300 sccm, and maintain the internal pressure of the growth chamber at 100 Pa. Under lower pressure, the molecules of the raw material have relatively free mobility, which i...
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