The invention relates to a surface plasmon laser of a semiconductor nanowire-metal film structure, which mainly consists of a solid semiconductor nanowire, a hollow semiconductor nanowire, quantum dots and a metal film. The surface plasmon laser is of the semiconductor nanowire-metal film structure densely provided with the quantum dots, the semiconductor nanowire emits high-frequency laser underexternal excitation, the high-frequency laser is absorbed by the quantum dots on the surface of the nanowire, and low-frequency light is radiated, thus the wavelength of the laser is modulated, and asurface plamon mode is excited on the surface of the metal film. A plurality of light emitting peaks can be obtained to form a wide-spectrum light source by changing the radius, the surface shape, the materials and the like of the quantum dots. Compared with the traditional nano-quantum lasers, the surface plasmon laser disclosed by the invention obtains excellent nano-scaled coherent light, can also adjust the wavelength of output laser and has the advantages of small size, high light density, wavelength adjustment, wide-spectrum gain and the like.