32results about How to "Satisfy the temperature condition" patented technology

The invention relates to a device for manufacturing a large-scale complex thin-wall aluminum alloy casting through pouring and mold filling under vacuum and crystallization and solidification under pressure. The device comprises a vacuum pressurization casting chamber, a vacuum pumping system, an air pressurization system and an intelligent control system. The vacuum pressurization casting chamber is a high-pressure air-tight seal tank and adopts the vertical arrangement; a turnover seal cover driven by a cylinder and a locking ring for performing rotary seal are arranged at the upper part of the high-pressure air-tight seal tank; a pressure and vacuum detector is arranged on the seal cover; a ladle, a overturn casting drive device, a metal liquid diversion trench, a turnover temperature measuring device and the like are internally arranged in the chamber; a manual casting mechanism is arranged at the outer part of the chamber; the vacuum pumping system is composed of a vacuum pump, a vacuum storage cabin and a pipeline system; the air pressurization system is composed of an air compressor, a refrigeration drier, a pressure storage cabin, a circuit and a pipeline system; and the intelligent control system consists of a PLC (Programmable Logic Controller), an air bottle, a security caution light and an affiliated pipeline system, wherein the PLC is connected with the air bottle, the security caution light and the affiliated pipeline system, which collects and displays data of vacuum, pressure, temperature and the like to realize the intelligent control for the devices, so that the stages in the vacuum pressurization casting can be ensured to be performed sequentially, continuously and smoothly.

The invention discloses a hollow door, which can reduce heat loss, is beneficial to maintain the ambient temperature, and can meet certain thermal insulation requirements in semiconductor wafer technology. The technical solution is: design a hollow layer for heat insulation among the two panels, so as to insulate the interior of a certain space from the outside. Compared with the traditional technology, the hollow door of the present invention can make the XeF2 etching system or gluing machine and other equipment that need to maintain a certain ambient temperature in the semiconductor wafer process better meet the temperature conditions.

The invention relates to an ash internal cycle fluid afterburning device, based on high-temperature separation, wherein the invention uses furnace and secondary wind to realize initial high-temperature separation and sets high-temperature combined water cooling separator at the heated surface of water condense slag tube beam at the outlet of high-temperature smoke to realize ash high-temperature separation; and the separated ash is feedback to the high-temperature area to be cycle fluidized burnt, to meet the burning conditions as temperature, time, and disturbing mixing, to improve the burning rate and reduce the pollution. The invention can improve the burnt rate and the burning efficiency of coal.

The invention discloses a structure of a flexible perovskite solar cell and a preparation method thereof. The solar cell structure proposed by the present invention is composed of a flexible substrate, a metal bottom electrode, a doped electron collection layer, a perovskite layer, a hole transport layer and a transparent conductive polymer top electrode, in order from bottom to top. The battery structure proposed by the present invention can use a low work function interface modification layer and a doped electron collection layer as the cathode modification layer to avoid the use of metal oxides, making low-temperature preparation possible. Using metal as the bottom electrode, the resistance value is much smaller than that of common ITO, which can reflect light and can be used in the production of large-area batteries. The battery structure of the present invention can be applied to power generation devices that cannot use rigid materials such as curved walls and car tops, and can be bent without affecting device performance. It has broad application prospects for realizing flexible large-area perovskite batteries.

The invention discloses a method for intensifying the sintering of high-proportion fine-grained materials by multi-medium gas injection. The method involves mixing, granulating, distributing, igniting and sintering raw materials such as fine-grained iron ore, flux, high-combustion active fuel, conventional fossil fuels and ore returns in sequence, and spraying into the sintering material surface during sintering Mixed gas medium composed of gas and water vapor. This method optimizes the gas permeability and thermal state of the material layer by adjusting the characteristic parameters and proportion of fuel with high combustion reactivity, coupled with the adjustment of the concentration of multi-medium gas injection, the coverage area, and the relative volume percentage of gas and water vapor, so as to achieve high Intensification of proportional fine-grained material sintering.

The invention provides a constant-temperature anaerobic pickle fermentation device, relates to the technical field of food processing, and solves the problems that the quality controllability of an existing product is poor and the real-time monitoring on the temperature and the pH (Potential of Hydrogen) value of a fermentation liquor cannot be realized. The constant-temperature anaerobic pickle fermentation device comprises a barrel, wherein the barrel is composed of an outer barrel, an inner barrel and a cover body and is in a sealed structure; the inner barrel is communicated with the outer barrel; the constant-temperature anaerobic pickle fermentation device further comprises a circulating pump and a heat exchanger which are communicated with each other; the circulating pump is communicated with the outer barrel by a liquid outlet pipe; the liquid outlet pipe is provided with a detection opening A; the heat exchanger is communicated with the cover body by a fermentation liquid pipe; the fermentation liquid pipe is provided with a detection opening B; the detection opening A and the detection opening B are used for determining and monitoring the temperature and the pH value of the fermentation liquid to realize the real-time monitoring and fermentation process; meanwhile, the constant-temperature fermentation is realized by adopting a structural design of heat exchange temperature control and fermentation liquid circulating constant temperature. According to the constant-temperature anaerobic pickle fermentation device, the closed constant-temperature anaerobic fermentation is realized and the flavor of traditional pickles is kept; the production of the pickles is industrial and large-scale.

The invention discloses a novel industrial fluidized bed reactor adopting the inorganic thermal superconducting technology.The novel industrial fluidized bed reactor comprises a barrel body and one or more inorganic thermal superconducting pipes arranged in the barrel body; the barrel body is separated into a thermal insulation area, a heat exchange area and a reaction area from top to bottom through an upper partition plate and a lower partition plate; each inorganic thermal superconducting pipe is internally provided with a casing pipe, a cavity between each casing pipe and the corresponding inorganic thermal superconducting pipe is filled with an inorganic thermal superconducting working medium, each internally-arranged casing pipe comprises an internally-arranged electrical heating pipe on the lower portion and a lead-out wire protective pipe on the upper portion, and the two ends of each inorganic thermal superconducting pipe extend into the thermal insulation area and the reaction area respectively.By means of the novel industrial fluidized bed reactor, the structural form of an existing industrial fluidized bed is changed completely, and the novel industrial fluidized bed reactor had the advantages that a cold medium (or a heat medium) is isolated from the reaction area, heating and heat obtaining are integrated, the structure is simple, maintenance is convenient to conduct, heat transfer efficiency is high, temperature uniformity inside a bed is good, operation safety is high, and the applicable temperature range is wide.

The invention provides a method for growing a GaN material on multiple substrates or large-size substrates simultaneously by a hydride vapor phase epitaxy (HVPE) technology, and also provides a device capable of implementing the method, in particular a nozzle used for providing a large-area growth area. When the method is applied to the device provided by the invention, more than 5 2-inch GaN substrates (depending on a constant temperature area range and the size of the nozzle) or more than one 4-inch or 6-inch substrate can be grown simultaneously. Due to the nozzle design, gallium oxide GaCl and ammonia NH3 are not mixed at the nozzle, pre-reaction at the nozzle is reduced, a pipeline is prevented from being blocked, the GaCl and the NH3 are only mixed on the surfaces of the substrates to form a uniform mixed layer, and the thickness uniformity and quality of GaN products are improved.