38results about How to "Resistance change" patented technology

The invention provides systems and methods for connecting an electric or hybrid electric vehicle to a charging station. Automated charging and docking processes may be provided. In some embodiments, a vehicle arrival and position may be detected. The vehicle may be charged with a charging arm and some automated vehicle positioning may occur. The vehicle may be charged and released. Fault detection may occur.

Interactive interfaces to video information provide a displayed view of a quasi-object called a root image. The root image consists of a plurality of basic frames selected from the video information, arranged such that their respective x and y direction are aligned with the x and y directions in the root image and the z direction in the root image corresponds to time, such that base frames are spaced apart in the z direction of the root image in accordance with their time separation. The displayed view of the root image changes in accordance with a designated viewing position, as if the root image were a three-dimensional object. The user can manipulate the displayed image by designating different viewing positions, selecting portions of the video information for playback and by special effects, such as cutting open the quasi-object for a better view. A toolkit permits interface designers to design such interfaces, notably so as to control the types of interaction which will be possible between the interface and an end user. Implementations of the interfaces may include editors and viewers.

A nonvolatile semiconductor memory device comprises a memory cell including a variable resistance element changing its electric resistance by voltage application and having current-voltage characteristics in which a positive bias current flowing when a positive voltage is applied from one electrode as a reference electrode to the other electrode through an incorporated rectifier junction is larger than a negative bias current, a memory cell selection circuit for selecting the memory cell from the memory cell array, a voltage supply circuit for supplying a voltage to the memory cell so that a predetermined positive voltage corresponding to the reading operation is applied to the other electrode of the variable resistance element, in the reading operation, and a readout circuit for detecting the amount of the positive bias current and reading the information stored in the selected memory cell, in order to suppress the reading disturbance of the memory cell.

The invention provides systems and methods for connecting an electric or hybrid electric vehicle to a charging station. Automated charging and docking processes may be provided. In some embodiments, a vehicle arrival and position may be detected. The vehicle may be charged with a charging arm and some automated vehicle positioning may occur. The vehicle may be charged and released. Fault detection may occur.

In an optical scanning device, a resin lens having a power that is an inverse (negative) power of a scanning lens is implemented in an optical system placed before a deflector so that a change in beam pitch caused by environmental temperature change can be prevented even when a resin lens is used as the scanning lens. To realize optical scanning using this device, a bundle of rays emitted from a plurality of light sources is coupled into a desired state by a coupling lens, after which the bundle of rays is incident on a resin lens. The surface of incidence of this resin lens has a spherical surface configuration with a negative power, and the exit surface of this resin lens has a cylindrical surface configuration with a negative power only in the sub scanning direction. Then, the bundle of rays passes through a resin lens that has a negative power only in the sub scanning direction and then enters a glass toroidal lens. A light deflector deflects the bundle of rays from the toroidal lens and the deflected bundle of rays is incident on a third optical system that compensates for a field curvature in each of the main scanning direction and the sub scanning direction, and focuses the bundle of rays onto a surface to be scanned while securing a desired beam pitch in the sub scanning direction.

A nonvolatile semiconductor memory device comprises a memory cell including a variable resistance element changing its electric resistance by voltage application and having current-voltage characteristics in which a positive bias current flowing when a positive voltage is applied from one electrode as a reference electrode to the other electrode through an incorporated rectifier junction is larger than a negative bias current, a memory cell selection circuit for selecting the memory cell from the memory cell array, a voltage supply circuit for supplying a voltage to the memory cell so that a predetermined positive voltage corresponding to the reading operation is applied to the other electrode of the variable resistance element, in the reading operation, and a readout circuit for detecting the amount of the positive bias current and reading the information stored in the selected memory cell, in order to suppress the reading disturbance of the memory cell.

Systems and methods for charging an electric bus having a charging interface on its roof may include determining that an approaching bus is supposed to be charged at the charging station, lowering the charging head of the charging station to land on the roof of the bus, and moving the bus with the charge head on its roof to engage the charging head with the charging interface.

The invention belongs to the technical field of oscillating circuits and particularly relates to a memristor based frequency-adjustable sine wave oscillating circuit. The technical scheme includes that the memristor based frequency-adjustable sine wave oscillating circuit is formed by a common-emitter cascade amplifying circuit (1), a frequency selective network (3) and a control module (2), wherein the frequency selective network (3) is connected with the common-emitter cascade amplifying circuit (1) and the control module (2). An input end V1i and an output end V1o of the common-emitter cascade amplifying circuit (1) are respectively connected with the frequency selective network (3), and an output end V1o of the common-emitter cascade amplifying circuit (1) is connected with an input end Vw of a peripheral circuit. The memristor based frequency-adjustable sine wave oscillating circuit has the advantages of easiness in oscillation starting, high stability and easiness in realizing automatic control.

The invention provides a numerical control resistance box which mainly comprises a data processing module, a motor driven module, a communication interface module, a keyboard module, a display module, a power supply module, a clock module and a storage module, wherein the data processing module determines a set resistance value or a calibration resistance value by acquiring the potential change of each port of the keyboard module; the data processing module determines a set resistance value or a calibration resistance value of an upper computer by acquiring the data information of the communication interface module; the data processing module controls the display module to display the set resistance value; and the data processing module controls the motor driven module to control quantile, unit digit, tens digit, hundreds digit and thousands digit resistance regulation mechanisms so as to realize the regulation of the resistance value. The numerical control resistance box provided by the invention overcomes the defects of complicated processes, large workload and the like of a resistor of a common resistance box, and achieves the effects of accuracy, high efficiency and convenience.

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

The invention discloses a magnetic suspension supporting rotary table, belonging to the technical field of physical experiment equipment. The magnetic suspension supporting rotary table comprises an outer cylinder, wherein a rotating shaft is longitudinally inserted into the outer cylinder, a rotary table is arranged at the top end of the rotating shaft, a first magnet and a second magnet are respectively arranged on the opposite side walls of the outer cylinder and the rotary table, and a display part is arranged on the outer wall of the outer cylinder. The magnetic force can be adjusted in atargeting manner according to the specific use condition, so that the magnetic suspension supporting rotary table can be used in different environments and has a relatively wide application range; byvirtue of the cooperative use of pressure sensing equipment and the display part, and the detected pressure can be displayed through the display part, so that the displaying of the data is relativelyvisual; by arranging a sliding sleeve, the friction is relatively small during the up-down movement of the rotating shaft, and the rotation is relatively steady in use; and the resistance value of asliding resistor can be adjusted through a driving motor, so that the resistance value and an output current value can be changed.

A thin-film electrode layer having a superior electromigration resistance is disclosed. The thin-film electrode layer includes a first base layer composed of β-Ta, a main conductive layer composed of Au, and a protective layer. The protective layer is a composite of a Cr sublayer and an α-Ta sublayer. A thin-film magnetic head having the thin-film electrode layers and a method for forming electrodes in the thin-film magnetic head are also disclosed.

The invention discloses a flexible graphene heating fabric with a real-time temperature monitoring function. The flexible graphene heating fabric comprises a heating temperature measuring layer and heat insulation layers on two sides, the heat insulation layers are provided with traditional fabrics, the heating temperature measuring layer can be provided with a plurality of heating temperature measuring units, so that different portions are heated by different temperatures, and the temperatures are monitored in real time. The heating temperature measuring layer takes a flexible macromolecule film as a substrate, graphene-based conductive ink serves as a raw material, low-resistance graphene conducting layer is printed by a silk-screen printing mode, a conductive silver paste film and a copper foil serve as electrodes, printable flexible temperature sensors are printed on the low-resistance graphene conducting layer, and the heating temperature measuring layer are prepared by modes suchas hot pressing and bonding. Local portions of the flexible graphene heating fabric can be heated in a distinguished manner, and the flexible graphene heating fabric has the advantages that the heating fabric is uniformly heated, and the temperature can be accurately controlled.

The invention discloses a touch switch control circuit of a fading type delay lamp. The touch switch control circuit comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a first capacitor, a second capacitor, a first triode, a second triode, a field-effect transistor, a thyristor, a voltage stabilizing diode, a touch electrode plate, a bridge rectifier circuit and the lamp. According to the touch switch control circuit of the fading type delay lamp, when the lamp needs to be turned on, the circuit can be switched on just by touching the touch electrode plate, and then the lamp is turned on immediately; after a certain time delay, light of the lamp becomes dimming until the light goes out. A touch switch is only provided with two external lead wires and can be used for replacing a common lamp switch without changing original wire arrangement; the delay time can be changed by adjusting the resistance value of the sixth resistor. The touch switch control circuit is simple in structure and convenient to replace and has the popularization and use value.

The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Alx(SbyTe1)1-x, where 0<x≦0.85, 0.67≦y≦7. Said material is electrically driven from outside. By adjusting the content of three elements in the mixture, storage materials with different crystallization temperatures, melting temperatures and activation energies of crystallization can be achieved. Any two elements of aluminum, antimony and tellurium can be bonded to each other, so the adjustability is very high, maintaining the phase change properties in a wide range. Compared with conventional Ge2Sb2Te5, the materials achieved by properly adjusting the element ratio in Alx(SbyTe1)1-x have higher crystallization temperatures, better thermal stability and data retention, and lower melting temperatures, while at the same time inheriting the fast phase change capability from SbyTe1. Moreover, as a common element used in microelectronics, aluminum (Al) features mature technology and nice compatibility with CMOS.

The invention discloses a spraying membrane heater for a porous ceramic block. The spraying membrane heater comprises a ceramic base material and at least two electricity connection electrodes arranged on the surface of the ceramic base material. Through holes are formed in the ceramic base material. Heating films are sprayed one part or all inner wall surfaces of one part or all of the through holes and one part or all of the surfaces of the ceramic base material. The heating films are connected as one piece, the heating films are connected with the electricity connection electrode. The areaof the heating films is greatly increased, so that the heater can realize the high-power heating function at a small volume. Therefore, the heater is high in heating efficiency. Different electricityconnection electrodes are arranged to be connected with a power supply, and the resistance value of heating films between the electricity connection electrodes can be changed. Therefore, the change ofthe power is realized. The porous shape enables the heat transmission to be more efficient.

The invention discloses an esterase mutant Est8-XL with improved activity and application thereof. The amino acid sequence of the esterase mutant Est8-XL is as shown in SEQ ID NO. 1. The mutant esterase Est8-XL with improved activity is obtained through three rounds of screening by adopting error-prone PCR (Polymerase Chain Reaction) and a high-throughput screening method based on color change of a bromothymol blue (BTB) indicator. Compared with the wild esterase Est8, the mutant esterase Est8-XL has the advantages that the deacetylation activity on 7-aminocephalosporanic acid is improved, and the activity of the mutant esterase Est8-XL in a buffer solution with the pH value of 9.5 to 10.0 and the activity of the mutant esterase Est8-XL in a 10 mM NaCl solution, a 10 mM KCl solution, a 10 mM LiCl solution, a 10 mM CuSO4 solution, a 10 mM NiSO4 solution and a 10 mM ZnSO4 solution are improved. The mutant esterase Est8-XL disclosed by the invention can be applied to the technical field of biological medicines.

The invention discloses a controlling switch of an intelligent water dispenser, and relates to the field of electrical equipment. The switch comprises a socket used for supplying power for the water dispenser and a slide rheostat used for connecting the socket and the water dispenser, an air bag filled with gas is installed on the outer side of the socket, the air bag is communicated with a gas cylinder, and the gas cylinder is provided with a piston rod; a sliding block used for adjusting the stopping of the slide rheostat is slidably connected with the slide rheostat; the piston rod is connected with a sliding block and used for pushing the sliding block to move on the slide rheostat; the piston rod is of a hollow structure, and a guiding wire connecting the socket and the slide rheostatis arranged in the piston rod. The switch is capable of adjusting the power of the water dispenser.

The invention provides a preparation method of an HRP (High Resistance Poly) resistor and a method for changing the resistance thereof. The preparation method comprises the steps of carrying out implantation of a first ion B on a resistor body, and then carrying out implantation of a second ion O. A substitution B and an interstice O form a BsO2i complex which does not affect the resistance at certain light conditions, so that the property of the resistor can be changed by changing the carrier concentration of the ion B, and thus the resistance of the HRP resistor can be changed. In addition, the preparation method is simple, each to implement and good for production. Furthermore, in the method provided by the invention for changing the resistance of the HRP resistor, only a certain period of illumination with certain intensity is required to be carried out if the resistance of the HRP resistor is required to be increased; and only heat treatment is carried out at a certain temperature if the resistance of the HRP resistor is required to be decreased.

The invention provides a GbRPS1 gene which can improve the resistance of plants to fusarium wilt and verticillium wilt, GbRPS1 protein polypeptides coded by the GbRPS1 gene, and a method for producing the GbRPS1 protein by recombination technology. The invention also discloses the functions and applications of the GbRPS1 gene in broad-spectrum disease resistance in the resistance to fusarium wiltand verticillium wilt.

The invention discloses a propulsion system protection method and a propeller, wherein, the propulsion system protection method comprises: providing a propeller and a shafting, opening a groove at theroot of a blade of the propeller, filling a filling part in the groove, and then mounting the propeller on the shafting. By making grooves at the root of the blade of the propeller, The strength of the blade root can be reduced, and the blade can be broken first if the resistance is large during the rotation of the propeller, so as to prevent the destructive force of the high resistance to the propeller from being transmitted to the shaft system or the shaft bracket, effectively protecting the shaft system and the shaft bracket, and reducing the difficulty of replacement and repair of the propulsion system; By filling the grooves with fillers, the strength of the roots of some blades can be repaired, and the blade surface can be smoothed so that the resistance of the blade surface does not change.

The invention relates to the technical field of electromechanical oil tank refueling equipment, in particular to energy-saving and environment-friendly oil tank refueling auxiliary equipment for electromechanical equipment. The auxiliary equipment comprises a working frame, a recovery tank is fixedly connected to the inner bottom surface of the working frame, a positioning rotating wheel is rotationally connected into the working frame through a shaft, a sliding rotating wheel is inserted into the positioning rotating wheel, a transmission rod is movably connected to the front surface of the sliding rotating wheel through a shaft, a traction rope is fixedly connected to the front surface of the transmission rod, a fixed sliding rail is fixedly connected to the position, located outside the transmission rod, in the working frame, a baffle plate is used for shielding an oil filling port, and oil injection is automatically stopped, so that the oil quantity of an oil tank in the equipment can be guaranteed, meanwhile, excessive oil injection overflow is avoided, normal operation of the equipment can be well guaranteed, and the oil injection monitoring effect is achieved, and whether the oil tank is damaged or not can be well judged by shifting an ammeter outside the equipment, so that timely maintenance is facilitated.

The invention discloses a circuit and a method utilizing an EEPROM of an MCU to set an overload point of a bifrequency inverter. The circuit comprises an H bridge circuit, a voltage amplifier circuit, a voltage detection circuit, a memory circuit, a control circuit, and a power tube driving circuit. The H bridge circuit is connected to the amplifier circuit. An output end of the amplifier circuit is connected to the voltage detection circuit. The voltage detection circuit is connected to the control circuit. The control circuit is connected to the voltage detection circuit through the memory circuit. The control circuit drives the H bridge circuit though the power tube driving circuit. According to the method and the circuit, through the utilization of the above circuit arrangement, a jumper wire cap is short connected, and a load is connected, and a switch button is pressed, so that the overload point is set. Data obtained is stored in the EEPROM memory unit.

The invention discloses a manufacturing method of an ITO film for a touch screen, which comprises the following steps: arrangement of etching protection layer: arranging an etching protection layer on the front surface of the ITO film; etching treatment: etching the front surface of the ITO film; cleaning treatment: cleaning the etched ITO film; stripping of the etching protection layer: removingthe etching protection layer of the cleaned ITO film; arrangement of protection layer on front surface: arranging a protection layer in the visible area on the front surface of the ITO film; and printing of silver wires: printing silver wires around the front surface of the ITO film. As the etching protection layer on the front surface of the ITO film protects the ITO film after the etching treatment step, higher cleanness can be provided when the ITO film is cleaned; and simultaneously, the ITO film can be prevented from being scratched or oxidized, thus the yield of the touch screen can be improved.