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95results about How to "Reduce output capacitance" patented technology

Pyroelectric sensor

A ferroelectric/pyroelectric sensor employs a technique for determining a charge output of a ferroelectric scene element of the sensor by measuring the hysteresis loop output of the scene element several times during a particular time frame for the same temperature. An external AC signal is applied to the ferroelectric scene element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry, such as a combination output capacitor and operational amplifier, is employed to measure the charge from the scene element. Preferably, the ferroelectric of the scene element is made of an economical and responsive strontium bismuth tantalate, SBT, or derivative thereof, disposed directly between top and bottom electrodes. Because of the frequency characteristics of the sensor, created by the external AC signal, the element need not be thermally isolated from the silicon substrate by a traditional air bridge, which is difficult to manufacture, and instead is preferably thermally isolated by spin-on-glass, SOG. To prevent saturation of an output signal voltage of the sensor by excessive charge accumulation in an output capacitor, the sensor preferably has a reference element configured electrically in parallel with the scene element. When the voltage of the AC signal is negative the output capacitor is discharged by flowing current through the reference element thus interrogating the polarization of the reference element which is compared to and subtracted from the polarization of the scene element for each cycle. The polarization difference measured for each cycle over a set time period are summed by an integrating amplifier to produce a signal output voltage.
Owner:APTIV TECH LTD +1

Multi-channel data acquisition device for submarine pipeline magnetic flux leakage internal detector

The invention discloses a multi-channel data acquisition device for a submarine pipeline magnetic flux leakage internal detector. The multi-channel data acquisition device comprises a hall sensor, a multi-path switch, an instrument amplifier, an analog-to-digital (AD) conversion module, a field programmable gate array (FPGA), a digital signal processor (DSP) and a secure digital memory (SD) card, wherein the multi-path switch has a two-stage series structure; the multi-channel data acquisition device is provided with heat insulation cotton so as to adapt to a specific high-temperature and high-corrosion environment of a submarine pipeline; the hall sensor converts the magnetic induction density into voltage; the voltage is switched by the multi-path switch, so that a signal is transmitted to the instrument amplifier; the instrument amplifier amplifies a weak signal; the AD conversion module sets sampling for eight times through software, performs analog-to-digital conversion, and transmits a digital value to the FPGA after the conversion; and the DSP receives FPGA cached data, digitally filters and compresses the cached data, and finally stores the data into the SD card. Due to a dual central processing unit (CPU) structure consisting of the FPGA and the DSP, a large amount of data can be stored and processed; the device has the characteristics of high speed, multiple channels, high resolution and the like; furthermore, pipeline transportation safety is guaranteed; and early maintenance is facilitated.
Owner:NORTHEASTERN UNIV

CMOS image sensor and method for forming same

A CMOS image sensor comprises at least one CMOS image sensor pixel unit pair which comprises a first pixel unit and a second pixel unit. Each pixel unit in the CMOS image sensor comprises a photodiode area and a drive circuit area, wherein the drive circuit area comprises output transistors. Drain electrodes of the two output transistors adjacent to the first pixel unit and the second pixel unit are connected to be a common output end. The invention further provides another CMOS image sensor, wherein the amount of effective contact holes can be reduced through an output contact hole and a power contact hole of a common output transistor of the adjacent pixel units, thereby effectively decreasing the amount of the contact holes. The structure enables pixel units with smaller dimension to be designed under the condition of unreduced technical nodes without modifying a peripheral circuit and the processing parameter, which can not increase the mask and processing cost, but reduces the output capacitance and increases the filling ratio and the optical path.
Owner:SEMICON MFG INT (SHANGHAI) CORP +1

PFC circuit, PFC control circuit and switch power source

The invention relates to the field of switch power sources and specifically relates to a PFC circuit capable of reducing output capacitance, a PFC control circuit and a switch power source in which the PFC control circuit is adopted. The PFC circuit provided in the invention comprises a PFC control chip; a feedback control circuit is integrated on the PFC control chip and is used for receiving input sampling voltage of an input detection circuit and output sampling voltage of an output detection circuit, the feedback control circuit is also used for outputting control signals for controlling a work mode of a voltage conversion circuit, the PFC control chip has a reference voltage end and is characterized by additionally comprising a waveform shaping circuit which is used for truncating a wave crest of input sampling signals, and the waveform shaping circuit is externally connected between the reference voltage end of the PFC control chip and earth. Compared with technologies of the prior art, the PFC circuit, the PFC control circuit and the switch power source are advantaged by circuit simplicity, low cost and easy-to-realize property.
Owner:MORNSUN GUANGZHOU SCI & TECH +1

Ripple wave suppressor circuit of program-controlled direct-current power supply

The invention discloses a ripple wave suppressor circuit of a program-controlled direct-current power supply. According to the ripple wave suppressor circuit of the program-controlled direct-current power supply, an active low-pass filter and a passive filter are connected between a positive output line of the direct-current power supply and a negative output line of the direct-current power supply after a capacitor C3 is connected between the positive output line of the direct-current power supply and the negative output line of the direct-current power supply, the active low-pass filter comprises an N-channel high-power MOSFET V1, a front-stage operational amplifier N1:1 with a dynamic compensation function and a rear-stage operational amplifier N1:2 with a dynamic compensation function, and the passive filter comprises an inductor L1 and a capacitor C1. According to the ripple wave suppressor circuit of the program-controlled direct-current power supply, high-frequency and low-frequency ripple wave noise output by the power supply can be lowered, the dynamic response performance can be improved, and the output precision and the stability are improved. The front-stage and rear-stage synchronous tracking control is adopted, accurate adjustment enabling the voltage difference to be low can be achieved, and the conversion efficiency of the power supply is effectively improved. As a result, the ripple wave suppressor circuit of the program-controlled direct-current power supply has high application value in the aspect of design of high-precision program-controlled power supplies.
Owner:CHINA ELECTRONIS TECH INSTR CO LTD

Field effect transistor and application device thereof

The present invention provides a MOSFET having a low on-state resistance and a high withstand voltage as well as a small output capacitance (C(gd), etc.). The MOSFET has a p-type base layer and a n-type source layer selectively formed on the surface of the p-type base layer. A n-type drain layer is formed in a position apart from the p-type base layer . On the surface of the region between the p-type base layer and the n-type drain layer, a n-type drift semiconductor layer and a p-type drift semiconductor layer are alternately arranged from the p-type base layer 4 to the n-type drain layer. Further, in the region between the n-type source layer and the n-type drain layer, a gate electrode is formed via a gate insulating film. With the structure, the neighboring region of the gate electrode is depleted by a built in potential between the n-type drift semiconductor layer and the p-type drift semiconductor layer or by the potential of the gate electrode, when the gate electrode, source electrode, and drain electrode are at 0 potential.
Owner:KK TOSHIBA

Radio-frequency LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and technological method

The invention discloses a radio-frequency LDMOS (Laterally Diffused Metal Oxide Semiconductor) device. A body region and an N-type light-doped drift region are arranged in a P-type epitaxial layer on a P-type substrate; a polycrystalline silicon gate and a Faraday shield layer of the LDMOS device are arranged on the surface of the epitaxial layer; the N-type drift region is divided into an upper layer and a lower layer; the concentration of the lower layer is greater than that of the upper layer; two-section P-type buried layers are arranged at a junction of the upper layer and the lower layer; and the radio-frequency LDMOS device in the structure has lower output capacitance. The invention further discloses a technological method of the radio-frequency LDMOS device.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Schottky diode controlled by junction barrier having superposed P<+>-P structure

InactiveCN102208456AEasy to meet application requirementsImprove reverse withstand voltageSemiconductor devicesCapacitanceElectronic systems
The invention provides a schottky diode controlled by a junction barrier having a superposed P<+>-P structure. The schottky diode comprises an N<+> type substrate zone (100), an N type drift region (101), P<+> portions of the superposed P<+>-P structure (102), an anodic electrode (104), a cathodic electrode (105), a silicon dioxide layer (106), a schottky contact (107), and an ohmic contact (108). Besides, the schottky diode also includes P portions of the superposed P<+>-P structure (103), wherein the P<+> window portions of the superposed P<+>-P structure (102) is on the P window portions of the superposed P<+>-P structure (103). According to the invention, before the P<+> portions of the superposed P<+>-P structure in an area are formed, the P portions of the superposed P<+>-P structure in an area are formed, wherein the P portions are separated from each other and the structure of P portions is similar to the netted structure of a junction barrier schottky (JBS). Therefore, reverse withstand voltage of the JBS diode device can be improved and the output capacitance can be reduced, on the condition that the forward conduction characteristic of the device is not sacrificed. The process of the invention has the strong feasibility of implementation, and the application requirement of the power electronic system can be satisfied easily according to the invention.
Owner:HARBIN ENG UNIV

Optical semiconductor relay device

A transient voltage occurring between output terminals during ON / OFF operation is reduced. There are provided a pair of input terminals IN1 and IN2, a pair of output terminals OUT1 and OUT2, MOSFETs N1 and N2 connected between the output terminals, and a drive circuit 10 connected between the input terminals IN1 and IN2 and the MOSFETs N1 and N2. A light-emitting diode D1 is connected between the input terminals IN1 and IN2. The MOSFETs N1 and N2 have their source electrodes electrically connected to each other and their drains connected to the output terminals OUT1 and OUT2 respectively. The drive circuit 10 includes a photodiode array FD1 that supplies a drive voltage to the gates of the MOSFETs N1 and N2, and a discharge circuit 11, connected between the gate electrodes and the source electrodes of the MOSFETs N1 and N2, that discharges electric charges accumulated on each gate electrode. (FIG. 1)
Owner:RENESAS ELECTRONICS CORP

Control unit for operating a safety system for a vehicle and method for operating such a safety system for a vehicle

In a control device and a method for operating a safety system for a vehicle, a step-up converter is fashioned as a switching converter which converts an input voltage derived from a vehicle battery voltage into a higher charge voltage at its output. In addition, at least one energy reserve storage device is provided that is charged by the charge voltage for the operation of the safety system in an autarkic mode. Between the step-up converter and the at least one energy reserve storage device there is connected a charge current source that is programmable during operation and that defines a charge current for the at least one energy reserve storage device as a function of its programming.
Owner:ROBERT BOSCH GMBH

Decode circuitry and a display device using the same

Multi-bit input data is divided into at least a first bit group and a second bit group, and each of first sub-decode circuits selects one selection target signal / voltage from selection target signal / voltage group in accordance with the first bit group. Then, one signal / voltage is selected according to the second bit group from the signals / voltages selected by the first sub-decode circuits, and is transmitted to an output signal line. Each of second sub-decode circuits is formed of a single train of series switches, and only one of the switch train is made conductive to transmit a finally selected signal / voltage to the output signal line.
Owner:MITSUBISHI ELECTRIC CORP
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