LDMOS transistor

Abstract

The LDMOS transistor (1) of the present invention comprises a substrate (2), a gate electrode (10), a substrate contact region (11), a source region (3), a channel region (4) and a drain region (5 ), the drain region (5) includes a drain contact region (6) and a drain extension region (7). The drain contact region (6) is electrically connected to the top metal layer (23) extending over the drain extension region (7), wherein the distance between the top metal layer (23) and the drain extension region (7) (723 ) greater than 2 μm. This reduces the area of ​​the drain contact region (6) and increases the RF power output efficiency of the LDMOS transistor (1). In another embodiment, the source region (3) is electrically connected to the substrate contact region (11) via the silicide layer (32) instead of the first metal layer (21), thereby reducing the source region ( 3) Capacitive coupling to the drain region (5) and thereby further increasing the RF power output efficiency of the LDMOS transistor (1).

Description

technical field [0001] The present invention relates to LDMOS transistors. Background technique [0002] In base stations for personal communication systems (GSM, EDGE, WCDMA), RF power amplifiers are key components. For these power amplifiers, RF laterally diffused metal-oxide-semiconductor (commonly abbreviated as LDMOS) transistors are now the technology of choice because of their exceptionally high power, gain, and linearity. In order to be able to meet the requirements imposed by new communication standards, the performance of LDMOS transistors is undergoing continuous improvement while the size continues to shrink. [0003] In WO2005 / 022645, an LDMOS transistor is disclosed which comprises source and drain regions in a semiconductor substrate in which the source and drain regions are connected to each other by a channel region . The source region and the substrate are electrically connected through the first metal layer. The LDMOS transistor also includes a gate el...

AI Technical Summary

Problems solved by technology

Relatively large output capacitance can adversely reduce the RF power output efficiency of the LDMOS transistor, which is defined as the RF output power divided by the DC input power of the LDMOS transistor

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