RF DMOS power device
A power device and radio frequency technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of increased capacitance in the depletion region, reduction in the width of the depletion layer, insufficient improvement in functional characteristic power gain, and additional power efficiency, etc. problem, to achieve the effect of reducing output capacitance, improving output characteristics, and high breakdown voltage
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[0056] The part of the SOI / SON radio frequency DMOS power device with an n (or p) buried layer of the present invention has small output capacitance, good output characteristics and high withstand voltage. And this type of structure is compatible with radio frequency power integrated circuits.
[0057] In specific implementation, for some SOI radio frequency DMOS power devices with buried layers, an n (or p) buried layer can be deposited on the substrate first, then an epitaxial layer can be grown, and finally a silicon wafer can be partially oxidized using wafer bonding technology. Then, it is bonded with another silicon chip. The pre-oxygen implantation technology can also be used to implant oxygen into some areas of the silicon wafer to form a partial oxide insulating layer;
[0058] For some SON radio frequency DMOS power devices with buried layers, the n (or p) buried layer is also deposited on the substrate first, then the epitaxial layer is grown, and finally a wafer is par...
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