104 results about "Semiconductor radiation detectors" patented technology

A data acquisition system including a readout Application Specific Integrated Circuit (ASIC) having a plurality of channels, each channel having a time discriminating circuit and an energy discriminating circuit, wherein the ASIC is configured to receive a plurality of signals from a semiconductor radiation detector. The data acquisition system also includes a digital-to-analog converter (DAC) electrically coupled to the ASIC and configured to provide a reference signal to the ASIC used in the generation of digital outputs from the ASIC, and a controller electrically coupled to the ASIC and to the DAC, the controller configured to instruct the DAC to provide the reference signal to the ASIC.

The invention discloses a semiconductor radiation detector based on a Bi-based quaternary halide single crystal, and a manufacturing method of the semiconductor radiation detector, which relate to the technical field of ray imaging detectors manufactured by a semiconducting material. The semiconductor radiation detector comprises the Bi-based quaternary halide single crystal serving as a ray absorption layer, an electron selective contact layer and a hole selective contact layer, wherein the electron selective contact selection layer and the hole selective contact layer are adhered to two surfaces of the ray absorption layer separately, and two electrodes are in contact with the two selective charge contact layers separately and serve as a positive electrode and a negative electrode of the device. The semiconductor radiation detector has the advantages of high sensitivity, environment friendliness, stability and the like.

The radiological imaging system which can improve an energy resolution and perform a diagnosis with high accuracy includes a bed for carrying an examinee H, first and second imaging apparatuses and disposed along the longitudinal direction of the bed. The first imaging apparatus has a plurality of semiconductor radiation detectors for detecting γ-rays emitted from the examinee H, arranged around the bed, the second imaging apparatus has an X-ray source for emitting X-rays to the examinee H and a radiation detector for detecting X-rays which have been emitted from the X-ray source and passed through the examinee H, and the bed is shared by the first imaging apparatus and the second imaging apparatus.

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI2 or II-IV-V2 where the “I” component is from column 1A or 1B of the periodic table, the “II” component is from column 2B, the “III” component is from column 3A, the “IV” component is from column 4A, the “V” component is from column 5A, and the “VI” component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

A two-dimensional, pixellated, monolithic semiconductor radiation detector, in which each detector pixel is essentially a perpendicular mode detector. This is achieved by an arrangement of anode spots, one for each pixel located on the flux-exposed front surface of the detector substrate, surrounding by a cathode array preferably in the form of a network of lines, such that the field between the anodes and cathodes on this front surface has a major component in the direction parallel to the surface, and hence perpendicular to the incident photon flux. The conductivity of the substrate is high near this front surface, since this is where the highest level of absorption of photons takes place, and a significant photoconductive current is thus generated between cathodes and anodes. The conductivity is proportional to the incoming photon flux, and decays exponentially with depth into the detector. Since all of the conduction paths are in parallel to each other, the resultant conductance between each anode and its surrounding cathode is the summation of all those conductances.

A radiological imaging apparatus capable of improving an arrangement density of semiconductor radiation detectors and detector units thereof, each detector unit consisting of a plurality of combined substrates having a detector substrate which includes semiconductor radiation detectors and a signal processing substrate which includes integrated circuits, housed in a housing. The detector substrate protrudes outward from an opening of the housing. A plurality of detector units are attached to a ring-shaped unit support section in a circumferential direction thereof. More specifically, the detector substrate protrudes inward from the unit support section and the housing is attached to the unit support section.

A cassette carrier for containing a cassette incorporating a semiconductor radiation detector includes a rectangular recessed portion formed for containing the cassette with an irradiation surface exposed. The recessed portion is formed by a first frame that forms a side wall of one side thereof and includes a handle that a user holds, and a second frame forming a side wall of another side of the recessed portion. In the side wall formed by the first frame, an opening is provided in an opposite position opposing a connector unit of the cassette with the cassette attached to the recessed portion. The first frame has a space in communication with the opening, and connection / disconnection of an external cable to / from the connector unit is possible through the space with the cassette attached, and the space is large enough to contain an entire connector housing of the external.

A guard-ring electrode can be used at a suitable position for each of a plurality of imaging regions. Improvement in image quality and reduction in unnecessary radiation exposure, such as reduction in artifacts or noise, improvement in SNR, and expansion in dynamic range, are realized by reducing the cross-talk or the inflow of electrical charges from ineffective regions. Based on a radiation detector having a plurality of pixel electrodes 117 and a common electrode that sandwich a photoelectric conversion layer, an interelement guard-ring electrode 111 is adjacently disposed between the pixel electrodes 117 of the radiation detecting element, and the interelement guard-ring electrode 111 is switched between an electrically open-circuit state and a ground-potential connection state, so as to change the area in which the radiation detecting element detects radiation.