1190 results about "Mobile charge" patented technology

In all representative embodiments presented, the Ge concentration in the source and drain 10 and the SiGe epitaxial channel layer 20 is in the 15% to 50% range, preferably between about 20% to 40%. The SiGe thicknesses in the source / drain 10 are staying below the critical thickness for the given Ge concentration. The critical thickness is defined such that above it the SiGe will relax and defects and dislocations will form. The thickness of the SiGe epitaxial layer 20 typically is between about 5nm and 15nm. The thickness of the epitaxial Si layer 30 is typically between about 5nm and 15nm. FIG. 1A shows an embodiment where the body is bulk Si. These type of devices are the most common devices in present day microelectronics. FIGS. 1B and 1C show representative embodiment of the heterojunction source / drain FET device when the Si body 40 is disposed on top of an insulating material 55. This type of technology is commonly referred to as silicon on insulator (SOI) technology. The insulator material 55 usually, and preferably, is SiO2. FIG. 1B shows an SOI embodiment where the body 40 has enough volume to contain mobile charges. Such SOI devices are called partially depleted devices. FIG. 1C shows an SOI embodiment where the volume of the body 40 is insufficient to contain mobile charges. Such SOI devices are called fully depleted devices. For devices shown in FIG. 1B and 1C there is, at least a thin, layer of body underneath the source and drain 10. This body material serves as the seed material onto which the epitaxial SiGe source and drain 10 are grown. In an alternate embodiment, shown in FIG. 1D. for extremely thin fully depleted SOI devices, one could grow the source and drain 10 laterally, from a lateral seeding, in which case the source and drain 10 would penetrate all the way down to the insulating layer 55.

Disclosed is a sensor for sensing the presence of an analyte component without relying on redox mediators. This sensor includes (a) a plurality of conductive polymer strands each having at least a first end and a second end and each aligned in a substantially common orientation; (b) a plurality of molecular recognition headgroups having an affinity for the analyte component and being attached to the first ends of the conductive polymer strands; and (c) an electrode substrate attached to the conductive polymer strands at the second ends. The electrode substrate is capable of reporting to an electronic circuit reception of mobile charge carriers (electrons or holes) from the conductive polymer strands. The electrode substrate may be a photovoltaic diode.

The invention is a mobile payment method based on mobile communication network, characterized in: adopting communication protocol and technical criterion of financial trade standard to perform bidirectional data transmission and electronic transaction between NFC mobile charging system and financial institution, and by wireless channel of mobile communication operator, adopting special communication protocol, safe protocol and encryption protocol to implement bidirectional data transmission and electronic transaction between traditional mobile terminal and NFC mobile charging system. As compared with the existing technique, it has the following outstanding advantages of: 1) it can effectively improve market competition capacity of mobile communication operator and financial institution; 2) it provides a convenient and safe payment mode for a user of handset with NFC mobile charging system, and can assure capital safety in the NFC mobile charging system; 3) the user of NFC mobile terminal need not pay fees to any financial institution.

A lower-cost and more precise control methodology of regulating the output voltage of a Flyback converter from the primary side is provided, which works accurately in either continuous voltage mode (CCM) and discontinuous mode (DCM), and can be applied to most small, medium and high power applications such cell phone chargers, power management in desktop computers and networking equipment, and, generally, to a wide spectrum of power management applications. Two highly integrated semiconductor chips based on this control methodology are also described that require very few components to build a constant voltage Flyback converter.

The invention discloses a man-machine interaction intelligent control system for a water heater. The man-machine interaction intelligent control system for the water heater comprises a water heater main control system and an intelligent terminal control system, and is characterized in that the water heater main control system and the intelligent terminal control system are in WIFI connection through a wireless router; the water heater main control system comprises a WIFI communication module used for receiving external control signals, a water heater microprocessor connected with the WIFI communication module through signals and a working module connected with the water heater microprocessor through signals; the intelligent terminal control system comprises a mobile terminal, a display / key module, a fingerprint collecting module, a fingerprint memorizing module and a fingerprint recognizing module, wherein the display / key module, the fingerprint collecting module, the fingerprint memorizing module and the fingerprint recognizing module are connected with a mobile terminal microprocessor. Compared with the prior art, an intelligent mobile charging controller is adopted in the man-machine interaction intelligent control system, a specially-arranged remote control device is not needed, the structure is simple, and the cost is low. The invention further provides an intelligent water heater control method adopting the man-machine interaction intelligent control system.

The present invention relates to a single field effect transistor capacitor-less memory device including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transistor and a base.The device further includes a fin structure comprising the source region, the intrinsic channel and the drain region, the fin structure extending outwardly from the base, and a double gate comprising a first gate connected to a first exposed lateral face of the intrinsic channel region for transistor control, and a second gate connected to a second exposed lateral face of the intrinsic channel region to generate a potential well for storing mobile charge carriers permitting memory operation, the first gate and the second gate being asymmetric for asymmetric electrostatic control of the device.The present invention also relates to a method for operating said device.

The invention discloses a method for supplying power generated by utilizing a piezoelectric material to a mobile phone, and a piezoelectric generation device, which belong to the technical field of power supply of mobile electronic equipment. In the method for supplying the power by utilizing a piezoelectric effect power generation principle, the piezoelectric generation device is arranged in the mobile phone, and energy produced by the work application of an external force acting on the mobile phone is recovered, stored as electric energy and provided for the mobile phone to utilize. In the method, at least one special piezoelectric generation device arranged in the mobile phone is also adopted, and comprises the piezoelectric material and a power conversion device, wherein the electric energy output end of the piezoelectric material is electrically connected with the power conversion device; and the power conversion device is electrically connected with a rechargeable battery of the mobile phone. The method and the device realize the recovery of the external energy and the full utilization of the energy, can further avoid troubles in the replacement of the battery of the mobile phone, remarkably reduce the dependence of the battery charging of the mobile phone in an external power supply and bring great convenience to the life of a user.