35 results about "Mobile charge carrier" patented technology

Disclosed is a sensor for sensing the presence of an analyte component without relying on redox mediators. This sensor includes (a) a plurality of conductive polymer strands each having at least a first end and a second end and each aligned in a substantially common orientation; (b) a plurality of molecular recognition headgroups having an affinity for the analyte component and being attached to the first ends of the conductive polymer strands; and (c) an electrode substrate attached to the conductive polymer strands at the second ends. The electrode substrate is capable of reporting to an electronic circuit reception of mobile charge carriers (electrons or holes) from the conductive polymer strands. The electrode substrate may be a photovoltaic diode.

An improved perforation gun includes an outer gun barrel, which is used in conjunction with an inner movable charge carrier or an inner movable sleeve to trap virtually all of the debris created by the firing of the perforation gun. The charge carrier has a plurality of explosive charges initially aligned with complementary, pre-existing holes in the wall of the charge carrier, which are initially aligned with complementary, pre-existing scalloped sections of the outer gun barrel.

The present invention relates to a single field effect transistor capacitor-less memory device including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transistor and a base.The device further includes a fin structure comprising the source region, the intrinsic channel and the drain region, the fin structure extending outwardly from the base, and a double gate comprising a first gate connected to a first exposed lateral face of the intrinsic channel region for transistor control, and a second gate connected to a second exposed lateral face of the intrinsic channel region to generate a potential well for storing mobile charge carriers permitting memory operation, the first gate and the second gate being asymmetric for asymmetric electrostatic control of the device.The present invention also relates to a method for operating said device.

An electroactive material for charge transport. The material is formed of a plurality of nanocomponents including nanoparticles, in turn formed of conductive carbon-based clusters bound together by a conductive carbon-based cluster binder including nanoclusters and nanocluster binders, all having high densities of mobile charge carriers (electrons, electronic acceptors, ionic species). A terminal is electrically coupled to the nanoparticles for charge transport.

An electroactive material for charge transport. The material is formed of a plurality of nanocomponents including nanoparticles, in turn formed of conductive carbon-based clusters bound together by a conductive carbon-based cluster binder including nanoclusters and nanocluster binders, all having high densities of mobile charge carriers (electrons, electronic acceptors, ionic species). A terminal is electrically coupled to the nanoparticles for charge transport.

A charge multiplication amplifier device comprises a series arrangement of a first separation barrier facility, a temporary storage well for charge carriers, a second charge transfer barrier facility, an impact ionization facility that is operative through electric field strength effective on mobile charge carriers, and a charge collection well for receiving charge carriers so multiplied.Advantageously, the device comprises a charge collection and transfer facility (32) that is geometrically disposed next to the impact ionization facility (31) whereas impact ionization facility is controlled at a substantially static electric potential (DC1, DC2) for controlling the electric field strength.Advantageously, another embodiment of this device comprises charge collection and transfer facilities (41, 42) implemented as two (or more) independently clocked signals Φ1, Φ2 that require nearly two times less swing to achieve same effect.

A charge multiplication amplifier device comprises a series arrangement of a first separation barrier facility, a temporary storage well for charge carriers, a second charge transfer barrier facility, an impact ionization facility that is operative through electric field strength effective on mobile charge carriers, and a charge collection well for receiving charge carriers so multiplied.Advantageously, the device comprises a charge collection and transfer facility (32) that is geometrically disposed next to the impact ionization facility (31) whereas impact ionization facility is controlled at a substantially static electric potential (DC1, DC2) for controlling the electric field strength.Advantageously, another embodiment of this device comprises charge collection and transfer facilities (41, 42) implemented as two (or more) independently clocked signals Φ1, Φ2 that require nearly two times less swing to achieve same effect.

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transistor and a base. The device further includes a fin structure comprising the source region, the intrinsic channel and the drain region, the fin structure extending outwardly from the base, and a double gate comprising a first gate connected to a first exposed lateral face of the intrinsic channel region for transistor control, and a second gate connected to a second exposed lateral face of the intrinsic channel region to generate a potential well for storing mobile charge carriers permitting memory operation, the first gate and the second gate being asymmetric for asymmetric electrostatic control of the device.

An electroactive material for charge storage and transport in an electrochemical capacitor. The material is formed of a plurality of nanocomponents including nanoparticles, in turn formed of conductive carbon-based clusters bound together by a conductive carbon-based cluster binder including nanoclusters and nanocluster binders, all having high densities of mobile charge carriers (electrons, electronic acceptors, ionic species). A terminal is electrically coupled to the nanoparticles for charge transport.

This device for the detection of ionizing radiation includes a stack integrating a first set of electrodes (1), a solid detector material sensitive to ionizing radiation (2), capable of interacting therewith by releasing electron and electron hole mobile charge carriers, and a second set of electrodes (3), said first and second sets of electrodes being polarized in such a way that an electric field is applied through the detector material (2), thereby allowing the charge carriers generated by the interaction between the detector material and the ionizing radiation to migrate. It further includes electrically insulated electrodes (41-44), known as non-collecting electrodes, and positioned in the volume of the detector material (2) subjected to the electric field, and capable, by capacitive effect, of detecting the charges induced by the migration of the charge carriers in the volume of the detector subjected to the electric field.

A method for manipulating a quantum system comprises at least one mobile charge carrier with a magnetic moment. The method comprises the steps or acts of applying magnetic field to the charge carrier. The magnetic is spatially non-homogeneous. The method also comprises bringing the charge carrier into an oscillatory movement along a path. The magnetic field depends on the position of the charge carrier on said path. The oscillatory movement may be caused by electrostatic interaction with gate electrodes. Due to this approach, thus, in a magnetic moment resonance process the conventional oscillating magnetic field is replaced by an oscillating electric field which is locally transformed into a magnetic field by the Coulomb interaction that displaces the charge carrier wave function within an inhomogeneous magnetic field or in and out of a magnetic field.

This device for detecting electromagnetic radiation, in particular X-ray or γ-rays, includes: a sensing layer consisting of at least one material capable of interacting with said electromagnetic radiation to be detected, in order to liberate mobile charge carriers, whereof the movement generates an electric current; a substrate provided with a plurality of elementary collectors of the charge carriers thus liberated, said elementary collectors being distributed discretely; a transfer layer suitable for transferring the charge carriers liberated by the sensing layer at the elementary collectors, said layer being connected to the sensing layer; and an insulating adhesive mating layer, suitable for mating the plurality of elementary collectors and the transfer layer.

This device for the detection of ionizing radiation includes a stack integrating a first set of electrodes (1), a solid detector material sensitive to ionizing radiation (2), capable of interacting therewith by releasing electron and electron hole mobile charge carriers, and a second set of electrodes (3), said first and second sets of electrodes being polarized in such a way that an electric field is applied through the detector material (2), thereby allowing the charge carriers generated by the interaction between the detector material and the ionizing radiation to migrate. It further includes electrically insulated electrodes (41-44), known as non-collecting electrodes, and positioned in the volume of the detector material (2) subjected to the electric field, and capable, by capacitive effect, of detecting the charges induced by the migration of the charge carriers in the volume of the detector subjected to the electric field.

A Schottky barrier integrated circuit is disclosed, the circuit having at least one PMOS device or at least one NMOS device, at least one of the PMOS device or NMOS device having metal source-drain contacts forming Schottky barrier or Schottky-like contacts to the semiconductor substrate. The device provides a new distribution of mobile charge carriers in the bulk region of the semiconductor substrate, which improves device and circuit performance by lowering gate capacitance, improving effective carrier mobility, mu reducing noise, reducing gate insulator leakage, reducing hot carrier effect and improving reliability.

A variable IC capacitor includes a semiconductor layer doped to contain mobile charge carriers. Capacitor electrodes C1 and C2 are disposed adjacent to each other on the layer's surface, gate electrodes G1 and G2 are disposed on opposite sides of C1 and C2, and source and sink electrodes are disposed on opposite sides of G1 and G2. Potentials are applied to the electrodes as needed to inject and then confine a finite charge into the region under C1 and C2. A drive voltage V applied between C1 and C2 causes the charge packet to move back and forth beneath them, such that the effective capacitance C seen by drive voltage V is given by C=Q / V, where Q is the magnitude of the charge packet.

Disclosed is a method for preparing a highly electron conductive polymer, the method comprising a step of doping a conductive polymer with a dopant capable of introducing movable charge carriers into the repeating units of the polymer, wherein a voltage higher than a conduction band of the polymer is applied to the polymer while the polymer is doped with the dopant, so as to modify electron conductivity of the conductive polymer. A highly electron conductive polymer obtained by the method, an electrode comprising the highly electron conductive polymer, and an electrochemical device including the electrode are also disclosed. The novel doping method for improving the electron conductivity of a conductive polymer can provide a conductive polymer with a conductivity comparable to the conductivity of a conventional conductive agent.

A memory device includes a memory unit comprising a substrate supporting mobile charge carriers. Insulative features formed on the substrate surface define first and second substrate areas on either side of the insulative features areas being connected by an elongate channel defined by the insulative features. The memory unit is switchable between first and second states in which the channel respectively provides a first conductance and a second, different conductance between the first and second areas at a predetermined potential difference between said first and second. A write circuit is arranged to apply a first potential difference across the first and second areas for changing the memory unit to the first state, and a second, different potential difference for changing the memory unit to the second state. A read circuit is arranged to apply the predetermined potential difference across the first and second areas for reading the state.

A Schottky barrier integrated circuit is disclosed, the circuit having at least one PMOS device or at least one NMOS device, at least one of the PMOS device or NMOS device having metal source-drain contacts forming Schottky barrier or Schottky-like contacts to the semiconductor substrate. The device provides a new distribution of mobile charge carriers in the bulk region of the semiconductor substrate, which improves device and circuit performance by lowering gate capacitance, improving effective carrier mobility μ, reducing noise, reducing gate insulator leakage, reducing hot carrier effect and improving reliability.

Provided herewith is a novel method of controllably processing a dielectric fluid by creating discharges within the dielectric fluid from mobile charge carriers contained within the dielectric fluid. Generally, the dielectric fluid and the mobile charge carriers are between two electrodes which apply a voltage to the charge carriers. In one embodiment, the dielectric fluid is a hydrocarbon fluid such as a heavy crude oil or a fuel. In one embodiment the charge carrier comprises water droplets. In another embodiment, the mobile charge carriers are metallic balls. In both instances the discharges initiate from the mobile charge carriers.

This invention provides electrically conductive electret, electret-based direct-current power source and structural electret, with applications including the self-sensing of damage, stress and strain (including structural self-sensing) and electric powering (including structural self-powering). The electret is an electrically conductive material comprising mobile charge carriers (electrons, holes or ions), which exhibit a gradient in the carrier concertation along a line connecting the positive charge center and negative charge center in the electret. The carriers create an electric dipole. The material is electrically continuous along this line, which is along the path of least electrical resistance. The material exhibits microstructure comprising microscopic features that are positioned along said line and that interact with said carriers, with the interaction enhancing said dipole. The materials are preferably metals, carbons and their composites. The electret's electric field preferably ranges from 10′ V / m to 1 V / m. The electrical conductivity preferably ranges from 103Ω−1·m−1 to 108Ω−1·m−1.