A semiconductor radiation detectors with high-resolution, which includes a semiconductor silicon with high purity and N type, a detection intrinsic region, a N type point anodic, a P type drift electrode and a first field-effect transistor, the semiconductor silicon (namely base chip) is of square shaped, the detection intrinsic region is consist of a P-N knot which evenly placed in the ray incident surface of the semiconductor silicon with high purity and N type, the N type point anodic is located outside of the intrinsic region relative to a side, and is surrounded by the P type drift electrode whose focus is a N type electrode, the P type drift electrodes are a plurality of article round convex rings whose focus is the N type electrode, the first filed-effect transistor is arranged inside the N type electrode. A new planar construction of the P type drift electrode is used in the detector on the base of silicon drift detector SDD, and key progress is processed for maintaining high resolution in SDD, large counting region, small size, light weight, and weak points of the SDD existed in the past is quite improved.