62 results about "Silicon drift detector" patented technology

An x-ray spectrometer system comprising an x-ray imaging system with at least one achromatic imaging x-ray optic and an x-ray detection system. The optical train of the imaging system is arranged so that its object focal plane partially overlaps an x-ray emitting volume of an object. An image of a portion of the object is formed with a predetermined image magnification at the x-ray detection system. The x-ray detection system has both high spatial and spectral resolution, and converts the detected x-rays to electronic signals. In some embodiments, the detector system may have a small aperture placed in the image plane, and use a silicon drift detector to collect x-rays passing through the aperture. In other embodiments, the detector system has an energy resolving pixel array x-ray detector. In other embodiments, wavelength dispersive elements may be used in either the optical train or the detector system.

A handheld X-ray fluorescence (XRF) spectrometer is described. The handheld XRF spectrometer comprises a radiation source, a silicon drift detector (SDD), a cooling device configured to regulate the temperature of the SDD, at least one signal processing and power control module coupled to at least one of the radiation source, the SDD, and the cooling device, and a housing substantially encasing the radiation source, the SDD, the cooling device, and the at least one signal processing and power control module. The at least one signal processing and power control module includes at least one input / output connector.

An X-ray detector using a semiconductor detector, most preferably a Silicon Drift Detector, utilizes a field effect transistor or other voltage-controlled resistance to generate an output voltage proportional to its input charge (which is generated by the X-ray photons incident on the semiconductor detector). To keep the charge (and thus the output voltage) to an acceptable range—one wherein the relationship between output voltage and input charge is substantially proportional—a feedback circuit is provided between the output and input terminals, wherein the charge on the input terminal is depleted when the output voltage begins leaving the desired range. Preferably, this is done by a comparator which monitors the output voltage, and provides a reset signal to the input terminal when it begins moving out of range. Alternatively or additionally, the reset signal may be a pulse supplied to the input terminal from a pulse generator activated by the comparator.

A silicon drift detector (SDD) comprising electrically isolated rings. The rings can be individually biased doped rings. One embodiment includes an SDD with a single doped ring. Some of the doped rings may not require a bias voltage. Some of the rings can be field plate rings. The field plate rings may all use the same biasing voltage as a single outer doped ring. The ring widths can vary such that the outermost ring is widest and the ring widths decrease with each subsequent ring towards the anode.

A silicon drift detector has an X-ray detection device, an electrode terminal subassembly for electrical connection, a Peltier device, and first and second shields formed between the electrode terminal subassembly and the Peltier device. The first shield is made of a material consisting chiefly of an element having an atomic number smaller than the average atomic numbers of the elements included in the material of the Peltier device. The second shield is made of a material consisting chiefly of an element having an atomic number greater than the atomic numbers of the elements included in the material of the Peltier device

The invention provides a silicon drift detector. The silicon drift detector comprises an N type silicon wafer in a detection region, an isolation layer, a plurality of front surface electrodes arranged at intervals, back surface electrodes, and a plurality of partial pressure parts arranged at intervals, wherein a front surface region in the detection region comprises a front surface annular N region and a plurality of front surface annular P regions which are arranged at intervals; a back surface region in the detection region comprises a P type region; the isolation layer is arranged on thefront surface of the N type silicon wafer, and the isolation layer comprises multiple first contact holes formed at intervals; the multiple front surface electrodes comprise negative electrodes and positive electrodes; the negative electrodes are arranged in the corresponding first contact holes connected with the front surface annular P regions in a one-to-one correspondence manner; the positiveelectrodes are arranged in the corresponding first contact holes connected with the front surface annular N region; the back surface electrodes are arranged on the surface of the front surface region,far from the detection region, of the P type region; the multiple partial pressure parts are arranged on the surface, far from the N type silicon wafer, of the isolation layer; the partial pressure parts are positioned on the surface of the isolation layer between two adjacent negative electrodes; the partial pressure parts are electrically connected with adjacent two negative electrodes respectively; and the partial pressure parts are semiconductor partial pressure parts. The detector is simple in operation.

A large area SDD detector having linear anodes surrounded by steering electrodes and having an oblong, circular, hexagonal, or rectangular shape. The detectors feature stop rings having a junction on the irradiation side and an ohmic contact on the anode side and / or irradiation side. The irradiation and anode stop ring biasing configuration influences the leakage current flowing to the anode and, hence, the overall efficiency of the active area of the detector. A gettering process is also described for creation of the disclosed SDD detectors. The SDD detector may utilize a segmented configuration having multiple anode segments and kick electrodes for reduction of the detector's surface electric field. In another embodiment, a number of strip-like anodes are linked together to form an interdigitated SDD detector for use with neutron detection. Further described is a wraparound structure for use with Ge detectors to minimize capacitance.

An x-ray analyser for a transmission electron microscope is described. The analyser has a silicon drift detector moveable in use between an analysis position and a retracted position. The analyser has a housing having an end portion within which the silicon drift detector is retained. The end portion is formed from a material with a relative magnetic permeability of less than 1.004. The analyser also has an automatic retraction system adapted to move the silicon drift detector from the analysis position to the retracted position upon receipt of a trigger signal indicative of a condition in which the power level received by the silicon drift detector from impinging x-rays or electrons is above a predetermined threshold.

An X-ray fluourescence (XRF) apparatus uses both an analyzer crystal (6) and a silicon drift detector (34). By using this combination problems of background and overlapping peaks can be mitigated.

The invention provides a multipoint type detection apparatus for ash content of coal. The apparatus comprises a container, a detector, an electric control machine. The container comprises coal sample cabins, baffle plates and an automatic cinder valve (1). The detector comprises a gamma ray source device, a ray detector, a silicon drift detector (8) and a multichannel data analysis spectrometer (9). The electric control machine comprises a master control system (23), a power source (24) controlled by the master control system (23), a coal flow control system (25), a signal transmission system (26), a data processing and spectrum unfolding system (27) and a display system (27). By using the apparatus, multipoint continuous measurement of the ash content is realized. By pulling the baffle plates, the coal ash content is controlled to be measured in batches, and the coal samples measured by dual-energy gamma-ray are ensured to be in the same batch. Furthermore, the mutual interference between moderate-energy gamma-ray and low-energy gamma-ray is prevented, thus improving the representativeness and accuracy of the measurement.

The present invention is directed to an energy dispersive X-ray detector appliance and a method for pulsed reset of said appliance. The present invention provides a ramp-and-neutralize cycled I-FET SDD in which the voltage dependency and nonlinearity due to the integrated FET is reduced via a compensation circuit to a level that can be handled by a correction circuit. The correction circuit does not substantially add noise or other kinds of erroneous signals. Accordingly, the appliance comprises a silicon drift detector with internal field effect transistor I-FET SDD, a compensation circuit for compensating nonlinearities in the I-FET SDD; and a neutralizing circuit adapted to neutralize accumulated charges in I-FET SDD comprising means for pulsed reset of the detector.

A semiconductor radiation detectors with high-resolution, which includes a semiconductor silicon with high purity and N type, a detection intrinsic region, a N type point anodic, a P type drift electrode and a first field-effect transistor, the semiconductor silicon (namely base chip) is of square shaped, the detection intrinsic region is consist of a P-N knot which evenly placed in the ray incident surface of the semiconductor silicon with high purity and N type, the N type point anodic is located outside of the intrinsic region relative to a side, and is surrounded by the P type drift electrode whose focus is a N type electrode, the P type drift electrodes are a plurality of article round convex rings whose focus is the N type electrode, the first filed-effect transistor is arranged inside the N type electrode. A new planar construction of the P type drift electrode is used in the detector on the base of silicon drift detector SDD, and key progress is processed for maintaining high resolution in SDD, large counting region, small size, light weight, and weak points of the SDD existed in the past is quite improved.

The invention belongs to the technical field of deep space detection and discloses a large-area spiral cylindrical double-sided silicon drift detector and a design method thereof. The design method for the large-area spiral cylindrical double-sided silicon drift detector comprises the following steps of determining electric potentials of the front surface and the rear surface of the silicon driftdetector; calculating an optimal drift path from a point S1 to a point S2 for a carrier during drifting in the silicon drift detector by adopting a mathematical variation method; determining a constant drift electric field of the optimal drift path; and calculating width distribution of a spiral negative electrode of the silicon drift detector. According to the method, through analysis on a carrier drift behavior law and heavily doped electrode growth of the SSD, starting from a new structure, a novel process integration design and a light particle theory calculation method, a double-sided electrode having a double-sided correlation effect and capable of keeping an uniform electron drift electric field and providing a smooth drift trajectory is designed, and an innovative design and manufacturing mode of the efficient collection SDD with high energy resolution of soft X-ray particles with the intensity of 0.5-15keV is established.

The invention discloses an SDD (Silicon Drift Detector)-based X-ray fluorescence analysis system. By using the SDD-based X-ray fluorescence analysis system provided by the invention, X-ray fluorescence can be effectively produced, an X-ray fluorescence spectrum can be analyzed, energy resolution is high and noise is low. The X-ray fluorescence analysis system provided by the invention comprises a fluorescence producing sub system, an SSD and an electronics reading sub system, wherein the fluorescence producing sub system comprises a radio-isotope source serving as an X-ray source and adopts a grazing incidence method to produce fluorescence; the SSD is used for converting X fluorescence produced by a sample into a weak electrical signal and the electronics reading sub system comprises a pre-amplifier, a shaping amplifying module, an MCA (multi channel analyzer), a high-voltage module, a refrigeration module and a power supply module, and is used for amplifying the electrical signal of the SDD, extracting the X-ray fluorescence spectrum, and providing a reverse-biased working high voltage and a low-temperature working environment for the SDD.

The invention discloses a grazing incidence X-ray fluorescence measuring device for quickly detecting the heavy metal content in cosmetics. The device comprises an excitation light source, a detecting device, a sample table, an analyzer and a circuit output device, wherein the excitation light source comprises an X-ray tube, X-ray tube high voltage and a collimator arranged at the outlet of the X-ray tube; the detecting device comprises a silicon drift detector, detector high voltage, a charge-sensitive preamplifier and a pulse-shaping amplifier; the sample table comprises a manual rotation displacement table, a goniometer table and a sample box; the analyzer is a digitized multi-channel spectrometer; the circuit output device comprises a computer, a stamper and a displayer. Through regulating the position and angle of the sample table, the X-ray emitted from the X-ray tube can irradiate on a cosmetic sample with a small angle to stimulate the characteristic X-ray fluorescence information of the heavy metal elements in the cosmetic sample, the fluorescence information is received by the silicon drift detector, converted into energyspectrum applicable to analysis by the digitized multi-channel spectrometer after being formed and amplified by the pulse-shaping amplifier, and the energyspectrum is processed and controlled by the computer.

The invention belongs to the technical field of deep space detection, and discloses a large-area concentric-circles-shaped cylindrical double-surface silicon drift detector and a design method thereof. The design method of the large-area concentric-circles-shaped cylindrical double-surface silicon drift detector comprises the following steps: determining electric potentials of the front surface and the rear surface of the silicon drift detector; calculating an optimal drift path from a point S1 to a point S2 when a current carrier drifts in the silicon drift detector by using a mathematic variational method; and determining a constant drift electric field of the optimal drift path. An SDD current carrier drift behavior law and heavy doping electrode growth are analyzed, a double-surface electrode which has double-surface correlation, not only maintains a uniform electron drift electric field, but also provides a smooth drift track is designed from a new structure, novel process integrated design and a theoretical calculating method for the corpuscular property of light, and a creative design manufacturing mode which is high in energy resolution ration on soft X-ray particles with the strength being 0.5-15 keV and effectively collects SDD is established.

An x-ray detector module comprises a plurality of silicon drift detector cells arranged next to each other on a sensor chip. The sensor chip is arranged in a recess of a frame-shaped base support, such that the sensitive chip surface lies in the opening of the frame-shaped base support. A mask (10) is fixed to the side of the base support (2) opposite to the recess and covers the outer edge areas of external detector cells and ridges above the sensor chip (8) protrude into the opening of the base support (2). The ridges are arranged in such a manner that they cover the defining strips which are adjacent to the detector cells, in order to protect the external edge areas and the defining strips which are covered by the mask (10) counter to the incident x-ray photons.

A multi-radiation identification and dosimetry system and method that allows for monitoring of alpha, beta, and gamma radiation is disclosed. The system / method incorporates a segmented silicon drift detector (SSDD) that allows measurement of directly absorbed radiation in the semiconductor (betas, conversion electrons, Lx lines, and alphas) on one SSDD segment and radiation from a radiation scintillation detector (RSD) on multiple segments of the SSDD. With the anode side of the SSDD directed toward the radiation inspection surface (RIS), the SSDD+RSD stacked radiation detector collects radiation which is processed by a charge sensitive amplifier (CSA) and then processed by a time stamping differentiator (TSD). A computing control device (CCD) may be configured to collect the time stamp differentiation data from the various SSDD segments to permit the simultaneous discrimination of several types of radiation by and presentation of these radiation types and counts on a display monitor.

The invention relates to a multi-target scanning type rapid sulfur detector. The rapid sulfur detector is composed of an excitation light source, a detector, a sample platform, an analyzer and a circuit output device, wherein the sample platform comprises a main disc, six sample boxes, motors, a gear and a bearing; on the condition of fixed points of irradiation, a computer is used for controlling the main disc and the six sample boxes to respectively do circular motion under the brake of the respective motors so as to realize multi-target multi-area scanning and reduce the influence of particle sizes and uniformities of samples; the excitation light source comprises a high-power X-ray tube, a collimator at the exit of the X-ray tube and an X-ray tube high voltage power supply; the detector comprises a silicon drift detector, a detector high voltage power supply, a load-sensitive pre-amplifier and a pulse shaping amplifier, and the silicon drift detector is arranged on the right side of the X-ray tube. The analyzer disclosed by the invention is a digital multi-channel spectrometer and is used for analyzing and treating original signals amplified by the amplifier and acquired by the detector and converting the original signals into energy spectrum for analysis, and finally the computer is used for data treatment and control.

A large area SDD detector having linear anodes surrounded by steering electrodes and having an oblong, circular, hexagonal, or rectangular shape. The detectors feature stop rings having a junction on the irradiation side and an ohmic contact on the anode side and / or irradiation side. The irradiation and anode stop ring biasing configuration influences the leakage current flowing to the anode and, hence, the overall efficiency of the active area of the detector. A gettering process is also described for creation of the disclosed SDD detectors. The SDD detector may utilize a segmented configuration having multiple anode segments and kick electrodes for reduction of the detector's surface electric field. In another embodiment, a number of strip-like anodes are linked together to form an interdigitated SDD detector for use with neutron detection. Further described is a wraparound structure for use with Ge detectors to minimize capacitance.

The invention discloses a processing technology of a large-area double-sided silicon drift detector, and belongs to the technical field of semiconductor detector processing. The process of making the large-area SDD is carried out by the eight steps of wafer gettering oxidation, double-sided mark preparation, positive and negative P-type injection etching, N-type positive injection etching, post-injection annealing, positive and negative injection region oxidation layer full etching, positive and negative electrode preparation, and rapid annealing; and the eight steps are sequentially carried out, so that the required large-area SDD is finally prepared. According to the processing technology disclosed by the invention, the purposes of improving the quality of wafer oxidation and the alignment precision of the positive and negative surfaces and greatly reducing the impurity introduction risk can be realized while the large-area double-sided SDD is prepared.

The invention belongs to the technical field of detectors, and discloses a concentric ring type large-area silicon drift detector, a design method and an application. The design method comprises the following steps: calculating the width distribution of electrodes and resistors of a detector; calculating the electric field voltage distribution of the silicon drift detector; determining a drift electric field and an optimal drift path from a point S1 to a point S2 during drift; determining the design of the rear surface of the silicon drift detector; and designing a floating electrode. The SDDcarrier drift behavior rule and the heavily doped electrode growth are analyzed. A double-sided electrode which has double-sided correlation, maintains a uniform electron drift electric field and provides a smooth drift track is designed, and an innovative design and manufacture mode of high energy resolution of soft X-ray particles with the intensity of 0.5-15keV and efficient SDD collection is established. A layer of divider resistor is deposited between the electrodes of the concentric circle type silicon drift detector by utilizing an ALD technology, so that the concentric circle type detector can normally work without an additional voltage divider.

The invention discloses a silicon drift detector based on a control surface electric field and a design method thereof. The silicon drift detector based on the control surface electric field comprisesa front surface electrode, a cylindrical n-type silicon main body and a back surface electrode which are connected in turn. First, according to the resistance value of the first P + type circular spiral cathode ring of the front surface electrode at the radial r point, determining a voltage distribution of a first P + type circular helical cathode ring, and then keeping the gap between two adjacent rings of the first P +-type circular spiral cathode ring unchanged, determining a width distribution of a first P + type circular helical cathode ring at a radial r point, and then determining therelationship between the rotation angle of the first P + type circular helical cathode ring of the front surface electrode and the radial r point, Secondly, the drift path and the drift electric fieldof the second P +-type spiral cathode ring of the rear surface electrode are determined. Finally, the design of the second P +-type spiral cathode ring of the rear surface electrode is determined according to the design method of the first P +-type spiral cathode ring.

The invention belongs to the technical field of deep space exploration and discloses a helical hexagonal double-sided silicon drift detector for large area and a designing method thereof, therein thedesigning method of the helical hexagonal double-sided silicon drift detector for large area comprises the following steps: determining the electric potential of anterior and posterior surfaces of thesilicon drift detector; the calculus of variations is used to calculate the optimum drift path of a carrier when drifting in the silicon drift detector from point S1 to point S2; determining the constant drift electric field of the optimum drift path; calculating the width distribution of the helical cathode of the silicon drift detector. By analyzing the drift laws of the carrier of SDD and thegrowth of heavily doped electrodes, and processing from the novel structure, the novel process integration design and the theoretical calculation method of particle-like nature of light, the double-sided electrodes with double-sided correlation is designed, which not only maintain uniform electron drift electric field but also provide smooth drift track. Finally, an innovative designing and manufacturing method for collecting SDD with high efficiency, high energy resolution ratio for soft X-ray particles with intensity of 0.5-15 keV is established.

The invention discloses a charge amplification circuit for a front-end reading system of a silicon drift detector. The signal amplification circuit comprises a first-stage amplification circuit and asecond-stage amplification circuit, the input end of the first-stage amplification circuit is in direct-current coupling connection with a detector, the output end of the first-stage amplification circuit is connected with the input end of the second-stage amplification circuit, and the output end of the second-stage amplification circuit outputs amplified signals. The invention aims to solve theproblem that input signals of a silicon drift detector are extremely weak. A pre-amplification circuit structure adopting a two-stage accurate charge amplification circuit is provided, the structure multiplies and amplifies the charge quantity and then converts the charge quantity into a voltage signal, the maximum charge-voltage gain can be obtained at the minimum noise cost, and the requirementof a silicon drift detector reading system for the gain is met.