39results about How to "Reaction" patented technology

A method of forming a light emitting device includes providing a sapphire substrate, growing an Al1−xGaxN first layer by vapor deposition on the substrate at a temperature between about 1000° C. and about 1180° C., and growing a III-nitride second layer overlying the first layer. The first layer may have a thickness between about 500 angstroms and about 5000 angstroms. In some embodiments, reaction between the group V precursor and the substrate is reduced by starting with a low molar ratio of group V precursor to group III precursor, then increasing the ratio during growth of the first layer, or by using nitrogen as an ambient gas.

A battery is provided which has a high capacity and can improve battery characteristics, such as cycle characteristics. The battery includes a spirally wound electrode body, wherein a cathode and an anode are wound with a separator in between. The anode includes, for example, simple substances, alloys, compounds of metal elements or metalloid elements capable of forming an alloy with Li, the like and combinations thereof. An electrolytic solution wherein an electrolyte salt is dissolved in a solvent is impregnated in the separator. For the electrolyte salt, a light metallic salt having B—O bond or P—O bond, such as difluoro[oxalato-O,O′]lithium borate and tetra fluoro[oxalato-O,O′]lithium phosphate, can be used. By forming a stable coating, decomposition reaction of the solvent can be inhibited, and reaction between the anode and the solvent can be prevented.

A photocatalytic composite material having a photocatalytic titanium oxide film on the surface of a substrate is produced by a CVD method in which TiCl4 vapor is reacted with water vapor. The TiCl4 vapor and the water vapor are injected into a vapor deposition chamber (9) through nozzles (5) and (6), respectively, such that the resulting two injected vapor streams meet before reaching the substrate, thereby mixing the two vapors. Within 3 seconds after this mixing, the mixed vapors are brought into contact with a substrate (1) which is moving in one direction. Preferably the TiCl4 vapor is injected in a reverse direction with respect to the direction of movement of the substrate through a multi-orifice nozzle (5), while the water vapor is injected through a slit nozzle (6) disposed at a smaller angle with respect to the substrate.

A negative electrode active material particle and a method for preparing the same are provided. The negative electrode active material particle includes SiOx (0<x≦2) and Li2Si2O5, and includes less than 2 wt % of Li2SiO3 and Li4SiO4.

The present invention relates to novel polypeptide variants of factor VII (FVII) or factor VIIa (FVIIa) polypeptides, where said variants comprise an amino acid substitution in position 10 and 32 and where said variants further comprise a sugar moiety covalently attached to an introduced in vivo N-glycosylation site located outside the Gla domain. Such polypeptide variants are useful in therapy, in particular for the treatment of a variety of coagulation-related disorders, such as trauma.

A power storage device in which charge capacity and discharge capacity are high and deterioration in battery characteristics due to charge / discharge is small is provided. A power storage device in which charge capacity and discharge capacity are high and output characteristics are excellent is provided. A power storage device in which charge capacity and discharge capacity are high and cycle characteristics are excellent is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector, an active material including a plurality of protrusions protruding from the current collector and an outer shell in contact with and attached to surfaces of the plurality of protrusions, and graphene in contact with and attached to the outer shell. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.

The invention relates to sub-critical processes and systems for accomplishing the same. In one aspect, the process is a sub-critical oxidation process for the destruction of organic and inorganic contaminates within a waste fluid or gas. The sub-critical processes are preferably carried out in a reactor and / or continuous flow centrifuge operating at sub-critical temperature and pressure. The processes and systems provide for destruction of high levels of organic and inorganic contaminates within a contaminate source, which represents a vast improvement over other conventional approaches. The processes and systems also accomplish this superior destruction of contaminates in a much faster time frame, i.e., minutes as compared to hours. Finally, the processes and systems described herein provide a safe and highly economical sub-critical approach as compared to the super-critical conditions, i.e., exceeding high temperatures and pressures, used in most conventional approaches.

The invention relates to a tobacco alkaloid releasing chewing gum comprising tobacco alkaloid, gum base, and chewing gum ingredients, said gum base comprising elastomer and resin-compounds constituting an amount in the range of about 2 to 20% by weight of said chewing gum.

The present invention provides a magnesium-base composite material capable of suppressing coarse growth of a crystal particle size of a magnesium matrix and Mg2Si particles, thereby providing excellent mechanical properties such as strength and hardness, and a manufacturing method thereof. The manufacturing method includes the steps of: blending matrix powder containing Mg and Si powder to obtain a blended matter; applying a plasticization treatment to the resulting blended matter to form a solid body; heating the solid body to allow Mg and Si to react with each other to form a heat solid body containing Mg2Si; and applying a warm plasticization treatment to the heat solid body. Thus, it is possible to provide a magnesium-base composite material having a tensile strength from not less than 100 MPa to not more than 500 MPa.

A high-purity vitreous silica crucible which has high strength and is used for pulling a large-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and an inner layer composed of amorphous silica glass with a bubble content of 0.6% or less and a purity of 99.99% or higher, and in the portion between the upper opening end of the high-purity vitreous silica crucible and the ingot-pulling start line of a silicon melt surface in the step of pulling a single-crystal silicon ingot, a portion corresponding to 40 to 100 volume % from the upper opening end of the crucible is in a crystalline structure free from the crystallization promoter.

A stator coil 24 is installed in a stator core 11, and an insulating resin is impregnated into slot portions 22 and hardened. The stator coil 24 is constituted by enameled wires in which a polyamideimide resin layer has been applied radially outside a copper wire and hardened, and the insulating resin contains as a major component a THEIC-modified polyester resin that has been modified by a fatty acid.

An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas. Next, a second semiconductor layer including an amorphous semiconductor and a microcrystal semiconductor is formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity imparting one conductivity is added is formed and a conductive film is formed. Thus, a thin film transistor is manufactured.

A substrate for selenium compound semiconductor has at least a steel base and an aluminum base. The aluminum base is arranged on one end in a direction of lamination of the steel base and the aluminum base, the steel base is arranged on the other end in the direction. An alloy layer having a thickness of from 0.01 μm to 10 μm is formed between the steel base and the aluminum base. A thermal oxide film having a thickness of 6 nm or more is formed on a surface of the steel base opposite to the aluminum base.

Described is an injection device (1) for administering a drug, the injection device (1) comprising a cartridge holder (2) adapted to receive a drug cartridge (3), a hollow injection needle (6) having a proximal tip (6.2) adapted to pierce a septum (4) of the cartridge (3) so as to establish a fluid communication between the cartridge (3) and the needle (6),and a cap (7) arrangeable over the cartridge holder (2) in a manner to cover the needle (6). In an initial state the cartridge (3) is arranged within the cartridge holder (2) with the septum (4) axially spaced from the proximal tip (6.2) of the needle (6). The cap (7) is adapted to move the needle (6) relative to the septum (4) for piercing it on movement of the cap (7) relative to the cartridge holder (2).

A method of manufacturing a solid electrolytic capacitor includes: rolling an anode foil, a cathode foil and a separator together, the separator being a mixed fiber composed of a chemical fiber and a natural fiber and being between the anode foil and the cathode foil; degrading and removing the natural fiber with enzyme; and forming an electrolytic layer composed of solid polymer between the anode foil and the cathode foil after degrading and removing the natural fiber.

A positive electrode active material with least part of a surface coated with a surface treatment layer composed of a phosphate compound. The phosphate compound contains at least one element selected from the group consisting of neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.

A battery is provided which has a high capacity and can improve battery characteristics, such as cycle characteristics. The battery includes a spirally wound electrode body, wherein a cathode and an anode are wound with a separator in between. The anode includes, for example, simple substances, alloys, compounds of metal elements or metalloid elements capable of forming an alloy with Li, the like and combinations thereof. An electrolytic solution wherein an electrolyte salt is dissolved in a solvent is impregnated in the separator. For the electrolyte salt, a light metallic salt having B—O bond or P—O bond, such as difluoro[oxalato-O,O′]lithium borate and tetra fluoro[oxalato-O,O′]lithium phosphate, can be used. By forming a stable coating, decomposition reaction of the solvent can be inhibited, and reaction between the anode and the solvent can be prevented.

The present invention relates to the field of aircraft structure strength design, and particularly relates to a gravity-center normal overload calculation method for ski-jump takeoff of an aircraft, so as to solve the problem of an inaccurate calculation result of the existing gravity-center normal overload calculation method. The gravity-center normal overload calculation method for ski-jump takeoff of an aircraft comprises the following steps: calculating the curvature radius of an oblique board of an aircraft carrier by using a predetermined formula; and according to formulas involving the gravitational acceleration, a takeoff roll speed of the aircraft, and a tangential angle of the oblique board of the aircraft carrier, calculating the gravity-center normal overload for ski-jump takeoff of the aircraft. According to the gravity-center normal overload calculation method for ski-jump takeoff of an aircraft, normal overload can be figured out more accurately, so that the calculation result matches the actual takeoff load better, thereby more truly reflecting a deck reaction force borne by a landing gear of the aircraft.

A method is provided for forming a feature of a target material on a substrate. The method including:forming a feature of a sacrificial material on the substrate; andforming the feature of the target material by a deposition process during which the feature of the sacrificial material is removed from the substrate by forming a volatile reaction product with a precursor of the deposition process, wherein the sacrificial material is replaced by the target material and the target material is selectively deposited on surface portions of the substrate, which portions were covered by the feature of the sacrificial material, to form the feature of the target material.

An inside layer including zeolite and an outside layer including alumina and Pd are formed in a layered shape on a carrier, and Ag and Bi are simultaneously allowed to be carried on the inside and outside layers through impregnation. Thus, production of an alloy through a reaction between Pd and Ag can be suppressed by Bi.

The present invention relates to an analyzing tool (X1) including a reaction space (4) for allowing a particular component contained in a sample and a reagent to react with each other, and a reagent portion (51, 52) which is arranged in the reaction space (4) and which dissolves when the sample is supplied to the reaction space (4). The reagent portion (51, 52) includes a first part (51) and a second part (52) facing each other at a defining surface defining the reaction space (4).

A heating unit includes an AlN substrate having a main surface on which an elongated heat-generating resistor is provided. A protection layer is formed on the main surface of the substrate for the heat-generating resistor. The protection layer includes a first cover layer covering the heat-generating resistor and a second cover layer covering the first cover layer. The first cover layer is made of crystallized or semi-crystallized glass having a higher crystallization temperature by at least 50° C. than the softening point of the glass. The second cover layer is made of non-crystalline glass.

An alkaline battery including a positive electrode, a negative electrode and an alkaline electrolyte, wherein the positive electrode includes a positive electrode material mixture including nickel oxyhydroxide, electrolytic manganese dioxide and expanded graphite, the expanded graphite has an average particle diameter on a volume basis of 5 to 25 μm, a BET specific surface area of 4 to 10 m2 / g, and a bulk specific gravity (apparent density) measured by a static method of 0.03 to 0.10 g / cm3, the nickel oxyhydroxide has an average nickel valence of not less than 3.05, and a content of the expanded graphite in a total amount of the nickel oxyhydroxide, the electrolytic manganese dioxide and the expanded graphite that are included in the positive electrode material mixture of 3 to 15 wt %.

An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas. Next, a second semiconductor layer including an amorphous semiconductor and a microcrystal semiconductor is formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity imparting one conductivity is added is formed and a conductive film is formed. Thus, a thin film transistor is manufactured.

A high-purity vitreous silica crucible which has high strength and is used for pulling a large-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and an inner layer composed of amorphous silica glass with a bubble content of 0.6% or less and a purity of 99.99% or higher, and in the portion between the upper opening end of the high-purity vitreous silica crucible and the ingot-pulling start line of a silicon melt surface in the step of pulling a single-crystal silicon ingot, a portion corresponding to 40 to 100 volume % from the upper opening end of the crucible is in a crystalline structure free from the crystallization promoter.

A method is to form a thin film light emitting device. The method includes providing a transparent substrate. A transparent anode layer, a light emitting layer, a metal cathode layer are sequentially formed on the transparent substrate. A sealant layer is formed to at least cover the light emitting layer and the metal cathode layer. A covering layer having a covering surface is provided. An evaporation process is performed to form an active absorption layer on the covering surface of the covering layer. The covering surface of the covering layer covers on a portion of the sealant layer above the metal cathode layer. The covering layer can have a recess region that is to be formed the active absorption layer thereon. Alternatively, the active absorption layer can be evaporated before the sealant is formed. Moreover, the active absorption layer can be replaced with an insulating layer.

A positive electrode active material with least part of a surface coated with a surface treatment layer composed of a phosphate compound. The phosphate compound contains at least one element selected from the group consisting of neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.

A method for producing a luster pigment containing a plurality of scaly pigment particles that is capable of suppressing reactions between an aluminum layer as a core layer of each pigment particle and water, even when the luster pigment is exposed to atmosphere containing oxygen or water. The method includes forming a first layer on a surface of a film substrate through deposition of titanium as material, forming a second layer on a surface of the first layer through deposition of aluminum as material, and forming a third layer on a surface of the second layer through deposition of titanium as material, so as to form a stack including the first layer, second layer, and third layer stacked in sequence on the surface of the film substrate, and removing the stack from the film substrate and crushing the removed stack, so as to produce the plurality of scaly pigment particles.

Provided is a water-based inkjet ink, comprising: a fluorine resin; a wetting agent; a pigment; a curing agent; and a water-based solvent, wherein the fluorine resin has a hydroxyl value of 10 to 30 mg KOH / g, and wherein the wetting agent does not comprise a hydroxy group.