131results about How to "Pattern in good shape" patented technology

[Problem] To provide a resist underlayer film forming composition for forming a resist underlayer film that has dry etching resistance and heat resistance at the same time. [Solution] A resist underlayer film forming composition which contains a polymer that has a unit structure represented by formula (1). In formula (1), it is preferable that R3 is a hydrogen atom, and both n1 and n2 are 0. A method for manufacturing a semiconductor device, which comprises: a step wherein an underlayer film is formed on a semiconductor substrate with use of a resist underlayer film forming composition of the present invention; a step wherein a hard mask is formed on the underlayer film; a step wherein a resist film is formed on the hard mask; a step wherein a resist pattern is formed by irradiation of light or electron beams and development; a step wherein the hard mask is etched with use of the resist pattern; a step wherein the underlayer film is etched with use of the patterned hard mask; and a step wherein the semiconductor substrate is processed with use of the patterned underlayer film.

A sulfonic acid onium salt represented by the following formula (1) can be used as a superior radiosensitive acid generator for resist compositions. It is possible to form a good pattern by using a resist composition containing this sulfonic acid onium salt.In formula (1), R1 represents a monovalent organic group, and Q+ represents a sulfonium cation or iodonium cation.

[Problem] To provide a resist underlayer film-forming composition for use in a lithography process for the production of a semiconductor device, said composition having heat resistance. [Solution] A resist underlayer film-forming composition which contains a polymer that has a unit structure represented by formula (1). In the formula, both ring A and ring B represent benzene rings; n1, n2 and n3 are 0; each of R4 and R6 represents a hydrogen atom; and R5 represents a naphthyl group. A method for producing a semiconductor device, which comprises: a step of forming an underlayer film on a semiconductor substrate using the above-described resist underlayer film-forming composition; a step of forming a hard mask on the underlayer film; a step of forming a resist film on the hard mask; a step of forming a resist pattern by irradiation of light or an electron beam and development; a step of etching the hard mask with use of the resist pattern; a step of etching the underlayer film with use of the patterned hard mask; and a step of processing the semiconductor substrate with use of the patterned underlayer film.

Disclosed is a photocurable resin composition for nanoimprint, which contains a curable monomer, or alternatively a curable monomer and a binder resin. The photocurable resin composition for nanoimprint is characterized by further containing 0.001-5 parts by weight of a compound, which has a reactive functional group and a hydrophobic functional group in the same molecular structure, per 100 parts by weight of the total of the curable monomer and the binder resin. The reactive functional group is preferably composed of at least one functional group selected from the group consisting of a hydroxyl group, an epoxy group, a vinyl ether group, an oxetanyl group, an alkoxysilane group and a radically polymerizable vinyl group. The hydrophobic functional group is preferably composed of at leastone functional group selected from the group consisting of a fluorine atom-containing group, an alkylsilane group, an alicyclic hydrocarbon group, and an aliphatic hydrocarbon group having 4 or more carbon atoms.

An airbag is disposed over almost the entire length along a roof side rail. The airbag comprises a duct formed with a gas introduction hole and a plurality of chambers communicating with the duct. The duct comprises a long first duct part and a short second duct part arranged with the gas introduction hole being provided therebetween. The inlet of a chamber closest to the gas introduction hole in the first duct part has a shape that becomes narrower gradually from the upper part toward the lower part. The passage width of the uppermost part of the inlet of the closest chamber is greater than the depth to the narrowest part thereof, and the passage width of the narrowest part is narrower than the passage width of the first duct part around the inlet thereof.

The present invention provides a positive resist composition wherein at least a polymer included in a base resin has a repeating unit with an acid labile group having absorption at the 248 nm wavelength light and the repeating unit is included with a ratio of 1 - 10 % of all repeating units of polymers included in the base resin. There can be provided a positive resist composition with equal or higher sensitivity and resolution than those of conventional positive resist compositions, and in particular, by which a pattern profile on a substrate with high reflectivity is excellent and generation of a standing wave and line edge roughness are reduced.

The problem of the present invention is to provide an etching solution composition that can etch with high accuracy a metal-laminated film pattern comprising thin films of copper and a copper alloy, can form an excellent pattern shape, and has practically excellent and stable characteristics with long solution life, and to provide an etching method using such etching solution composition. The present invention relates to an etching method for etching a metal-laminated film having a layer consisting of copper and a layer consisting of a copper alloy containing copper, using an etching solution composition comprising phosphoric acid, nitric acid, acetic acid and water, as well as to said etching solution composition.

To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative.A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1):wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.