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Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin

a technology of resin and underlayer film, which is applied in the direction of basic electric elements, electrical appliances, and paper, etc., can solve the problems of large influence of diffuse reflection of activating light ray from the substrate or of standing wave, difficult to obtain film thickness of resist pattern sufficient for processing the substrate, and large influence of standing wave reflection from the substrate. achieve satisfactory etching resistance and efficient suppression of reflection from the substra

Inactive Publication Date: 2010-01-28
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a resist underlayer film forming composition for use in a lithography process for producing a semiconductor device. The composition includes a polymer containing specific unit structures that can effectively absorb reflection light from the substrate and improve the resolution and stability of the resist pattern during processing. The composition can also have a selection ratio of the dry etching rate close to that of the resist, and can function as a reflection preventing film with excellent resist pattern quality. Additionally, the composition can provide a method for forming a resist pattern using the resist underlayer film forming composition.

Problems solved by technology

Following such a tendency, the influence of diffuse reflection of an activating light ray from the substrate or of a standing wave has become a large problem.
In future, when the miniaturization of the resist pattern progresses, there are caused a problem of the resolution and a problem of the collapse of the resist pattern after the development, so that the thinning of the resist becomes desired.
Therefore, it is difficult to obtain a film thickness of the resist pattern sufficient for processing the substrate and a process for imparting a function as a mask during processing the substrate to not only the resist pattern, but also a resist underlayer film produced between a resist and a semiconductor substrate to be processed, has become necessary.

Method used

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  • Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin
  • Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin
  • Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin

Examples

Experimental program
Comparison scheme
Effect test

synthesis example 1

[0135]30 g of 2-vinyl naphthalene, 3.5 g of glycidyl methacrylate and 4.5 g of 1-butoxyethyl methacrylate were dissolved in 112 g of cyclohexanone and then, the inside of a flask was purged with nitrogen, followed by elevating the temperature to 60° C. After elevating the temperature, 1.9 g of azobis-isobutylonitrile dissolved in 48 g of cyclohexanone were added to the reaction solution under nitrogen pressure and the reaction was effected at 60° C. for 24 hours. The reaction solution was cooled and then charged into methanol and a polymer was reprecipitated. The obtained polymer was dried by heating to obtain a polymer represented by Formula (7-1). The obtained polymer had a weight average molecular mass Mw of 12,000 (as converted into polystyrene). In Formula (7-1), when the total number of all unit structures constituting the polymer is assumed to be 1.0, the ratio of the number of unit structures containing 2-vinyl naphthalene, the ratio of the number of unit structures containi...

synthesis example 2

[0136]20 g of 2-vinyl naphthalene, 8.1 g of styrene, 3.7 g of glycidyl methacrylate and 4.1 g of 1-ethoxyethyl methacrylate were dissolved in 106 g of cyclohexanone and then the inside of a flask was purged with nitrogen, followed by elevating the temperature to 60° C. After elevating the temperature, 1.8 g of azobis-isobutylonitrile dissolved in 45 g of cyclohexanone were added to the reaction solution under nitrogen pressure and the reaction was effected at 60° C. for 24 hours. The reaction solution was cooled and then charged into methanol and a polymer was reprecipitated. The obtained polymer was dried by heating to obtain a polymer represented by Formula (7-2). The obtained polymer had a weight average molecular mass Mw of 11,000 (as converted into polystyrene).

[0137]In Formula (7-2), when the total number of all unit structures constituting the polymer is assumed to be 1.0, the ratio of the number of unit structures containing 2-vinyl naphthalene, the ratio of the number of un...

synthesis example 3

[0138]30 g of acenaphthylene and 9.2 g of 1-butoxyethyl methacrylate were dissolved in 115 g of cyclohexanone and then the inside of a flask was purged with nitrogen, followed by elevating the temperature to 60° C. After elevating the temperature, 2.0 g of azobis-isobutylonitrile dissolved in 49 g of cyclohexanone were added to the reaction solution under nitrogen pressure, and the reaction was effected at 60° C. for 24 hours. The reaction solution was cooled and then charged into methanol and a polymer was reprecipitated. The obtained polymer was dried by heating to obtain a polymer represented by Formula (4-2). The obtained polymer had a weight average molecular mass Mw of 10,000 (as converted into polystyrene).

[0139]In Formula (4-2), when the total number of all unit structures constituting the polymer is assumed to be 1.0, the ratio of the number of unit structures containing acenaphthylene and the ratio of the number of unit structures containing 1-butoxyethyl methacrylate were...

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Abstract

There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.

Description

TECHNICAL FIELD[0001]The present invention relates to a resist underlayer film forming composition for lithography effective during processing a semiconductor substrate, a method of forming a resist pattern using the resist underlayer film forming composition, and a method for producing a semiconductor device.BACKGROUND ART[0002]Conventionally, in the production of a semiconductor device, fine processing by the lithography using a photoresist composition has been performed. The fine processing is a processing method including: forming a thin film of a photoresist composition on a substrate to be processed, such as silicon wafer; irradiating an activating light ray, such as an ultra violet ray onto the resultant thin film through a mask pattern in which a pattern of a semiconductor device is depicted to develop a photoresist pattern; and subjecting the substrate to be processed, such as silicon wafer to etching processing using the resultant photoresist pattern as a protecting film. ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/311C08G63/40C08G63/42C08K5/15C08K5/10H01L21/30
CPCC09D125/02G03F7/11C08F212/08C08F212/32C09D125/14C08L25/14C08F220/18C08F226/12C08F220/325C08F220/281C08F232/08
Inventor SAKAGUCHI, TAKAHIROENOMOTO, TOMOYUKISHINJO, TETSUYA
Owner NISSAN CHEM IND LTD
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