211results about How to "Less dependent" patented technology

A method of forming an MTJ memory cell and / or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

A method for determining whether an radio frequency identification (RFID) device is detected, includes: (a) selecting a plurality of different antenna patterns from a predetermined multiplicity of antenna patterns; (b) determining a plurality of binary results; (c) selecting, from a plurality of predetermined methods, a method for forming a logical combination; and (d) determining that the identification device is detected by forming a logical combination of the plurality of binary results according to the selected method. Each binary result is responsive to whether a respective communication link provides a respective signal having a respective amplitude exceeding a respective threshold. Each communication link is operative in accordance with at least one of the selected antenna patterns.

A capacitive sensing system is used to measure a time-varying ion current through a channel, such as an ion channel or protein pore. Such a capacitive system does not suffer problems of electrode corrosion and, when used with methods to control a build up of ion concentration, allows the use of measurement volumes around the channel with dimensions on a scale of nanometers.

A device for ensuring reliable data packet throughput in a redundant system includes a splitter that creates copies of a data packet and sends each copy to a separate intermediate source for processing, parallel buffers for receiving the processed packets from the intermediate sources, and a comparator for determining whether the data packets are equivalent.

A method of forming an MTJ memory cell and / or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

A transflective display device has a viewing side (7) and a rear side (8) and comprises a plurality of electrowetting elements (2) having a first support plate (5) facing the viewing side and a second support plate (6) facing the rear side. Each electrowetting element comprises a space (10) between the first support plate and the second support plate and includes a first fluid (11) and a second fluid (12) immiscible with each other. The second fluid absorbs at least a part of the optical spectrum. The position of the second fluid is controllable to cover a predetermined area (30) of the cross-section (29) of the space in the plane of the second support plate. A structured reflector (18) is arranged on the second support plate, comprising within the cross-section an area (33, 34) transparent for light incident from the rear side and an area (35, 36) reflective for light incident from the viewing side. The transparent area and the reflective area are arranged such that the predetermined area (30) covered by the second fluid covers the same proportion of the transparent area and the reflective area.

A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable of promoting the crystallization of the amorphous silicon film by heating the amorphous silicon film, thereby crystallizing at least a part of the amorphous silicon film, and accelerating the crystallization by irradiating the silicon film with a laser beam or intense light equivalent thereto.

A touch-sensitive apparatus comprises a light transmissive panel, an illumination arrangement and a detection arrangement. The illumination arrangement is configured to couple light into the panel via an incoupling site such that the light propagates by total internal reflection in opposite top and bottom surfaces of the panel and such that an object touching the top or bottom surface causes a change in the propagating light. The detection arrangement comprises a light detector arranged to detect the change in the propagating light. A compact and robust incoupling site is defined by a sheet-like micro-structured surface portion which is fixedly arranged on one of the top and bottom surfaces and configured to transmit light having an angle of incidence that enables light propagation by TIR inside the panel.

A low voltage amplifier having a class-AB control circuit which generates minimal or no surge current when the output of the amplifier clips to ground or the negative rail. The amplifier includes an input stage, a summing circuit, a class-AB control circuit and an output stage. The input stage connects to a first current source and couples to receive a pair of differential input signals to generate intermediate signals that are summed together using the summing circuit. A second current source supplies the summing circuit with current. The class-AB control circuit receives the summed signals from the summing circuit to provide control for the output stage which generates the amplifier result at the output of the amplifier which delivers current to drive an external load. Specifically, the class-AB control circuit is improved by the addition of a PMOS device connected in such a way to cut off the DC current path that is generated during the output stage clipping condition by a diode connected PMOS device and a NMOS sensing device both located near the output of the class-AB control circuit. Thereby, the additional PMOS device minimizes the surge current generated by the NMOS sensing device when the output of the amplifier clips to ground or the negative rail.

A micromechanical inertial sensor having at least one seismic mass which may be deflected relative to a substrate, and at least one electrode surface which in terms of circuitry, together with at least portions of the seismic mass forms at least one capacitor having a capacitance which is dependent on the deflection of the seismic mass. At least one additional auxiliary electrode is included which is located outside the region which forms the capacitor and which may be set at a potential that deviates from the potential of the seismic mass.

There is provided a surface treatment method of metal that can endow the surface of a metallic material with strong bonding force in a simple process regardless of the profile and the substance of the metallic material as well as a metallic material obtained by such a method. The method comprises a first step of conducting a chemical etching process accompanied by formation of a film coat on the metal surface and a second step of chemically removing the film coat formed on the metal surface in the first step. If necessary, it may further comprise a third step of forming a thin layer on the metal surface after the second step.

Determining physiological life signs, with a sensor that is in contact with the surface of a patient's skin at point proximate an artery, and measuring arterial blood vessel displacement and / or blood pressure changes. A data stream of measurements of is collected and a set of parameters from the collected data, a number of physiological life signs parameters, is extracted from the data. The physiological life signs that can be extracted include heart rate, breathing rate, systolic blood pressure, and diastolic blood pressure.

A system for use in managing internet Small Computer Systems Interface (iSCSI) communications includes core logic and application programming interface (API) logic. The core logic has iSCSI protocol processing capability and is hardware independent for iSCSI communications. The system API logic is hardware dependent for iSCSI communications and communicates with the core logic.