The invention discloses high area efficiency
diode triggered controllable
silicon based on two-dimension design. The high area efficiency
diode triggered controllable
silicon based on the two-dimension design comprises a P-type substrate, N wells, a P well, P+ injection regions, N+ injection regions,
metal, a shallow-trench isolation part, a
cathode and an
anode, wherein the N wells comprise a first N well and a second N well, the P+ injection region comprises a first P+ injection region and a second P+ injection region, the N+ injection regions comprise a first N+ injection region, a second N+ injection region, a third N+ injection region, a fourth N+ injection region and a fifth N+ injection region, and the first N well, the P well and the second N well are arranged on the P-type substrate in sequence along the transverse direction. According to the high area efficiency
diode triggered controllable
silicon based on the two-dimension design, a diode is embedded into the controllable silicon at a trigger stage,
electric current flows mainly along the longitudinal direction of a device, thereby, well resistance in the longitudinal direction of the device is fully utilized, and compared with conventional diode triggered controllable silicon, the high area efficiency diode triggered controllable
silicon based on the two-dimension design has the advantages that only a few of series diodes of the device are required so that high trigger
voltage can be achieved, and the area efficiency is increased.