Reinforcing structure of radiation-resistant groove type MOS field effect transistor for satellite and preparation method

Abstract

The invention discloses a reinforcing structure of a radiation-resistant groove type MOS field effect transistor for a satellite and a preparation method. The reinforcing structure comprises a substrate, a slowly-changing epitaxial layer, an interlayer dielectric layer and a metal layer which are stacked in sequence, a P+ body doped region and an N+ source doped region are sequentially arranged onthe surface of the slowly-changing epitaxial layer, and a gate trench is formed in the slowly-changing epitaxial layer; a first gate oxide, a floating polycrystalline gate, a second gate oxide and acontrol polycrystalline gate are sequentially stacked in the gate trench from bottom to top to form a double-layer shielding gate structure; the interlayer dielectric layer is provided with source shallow trenches, the source shallow trenches are symmetrically distributed at two sides of the gate trench, the source shallow trenches sequentially pass through the interlayer dielectric layer, the N+source doped region and the P+ body doped region, and the depth of the source shallow trenches does not exceed the longitudinal polycrystalline thickness of a control polycrystalline gate in the gatetrench; a P+ deep source is formed in each source shallow trench through ion implantation, wherein the P+ deep source is connected with the P+ body doped region; the metal layer is arranged on the interlayer dielectric layer and fills the source shallow trenches.

Description

technical field [0001] The invention belongs to the field of electronic technology, in particular to a reinforcement structure and a preparation method of a radiation-resistant trench type MOS field-effect transistor for satellites. Background technique [0002] Trench MOS field effect transistors use trench sidewalls to form the gate structure of the device, which effectively reduces the device JFET resistance and drain resistance, and increases the cell density of the gate structure; it has a lower conductivity than the planar gate MOS field effect transistor. On-resistance, better quality factor, faster switching rate and lower drive loss, more suitable for low power consumption and high current design requirements of new distributed power systems in satellites and space vehicles, higher unit density is conducive to Power module integration and system miniaturization. [0003] However, the radiation resistance of the existing trench type MOS field effect transistor is in...

AI Technical Summary

Problems solved by technology

In the prior art, there is a shortcoming of insufficient radiation resistance of trench type MOS field effect transistors

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