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A method and device for changing the trigger voltage of an electrostatic protection device

A technology of electrostatic protection and trigger voltage, which is applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve problems such as damage to electronic components, and achieve the effects of reducing trigger voltage, increasing trigger voltage, and reducing capacitance

Inactive Publication Date: 2011-12-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
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Problems solved by technology

[0003] The purpose of the present invention is to solve the existing problem of electrostatic damage to electronic components and provide a method and device for changing the trigger voltage of electrostatic protection devices

Method used

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  • A method and device for changing the trigger voltage of an electrostatic protection device
  • A method and device for changing the trigger voltage of an electrostatic protection device
  • A method and device for changing the trigger voltage of an electrostatic protection device

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Embodiment Construction

[0016] In NMOS / PMOS or cascaded NMOS / PMOS (NMOS / PMOS transistors connected in series)

[0017] When used as an electrostatic protection device, according to the breakdown voltage formula of the unilateral abrupt junction , silicon dielectric permittivity , the maximum electric field , unit electron charge can be approximated as a constant, is the concentration on the low-doped side of the unilateral abrupt junction. It can be seen that the change of the concentration on both sides of the PN junction of the drain doped implantation region of NMOS / PMOS or cascaded NMOS / PMOS (NMOS / PMOS in series) changes its breakdown voltage and also changes the moment when its parasitic BJT is turned on . Therefore, the trigger voltage of NMOS / PMOS or cascaded NMOS / PMOS (NMOS / PMOS tubes connected in series) as an electrostatic protection device is reduced or increased.

[0018] The method for changing the trigger voltage of the electrostatic protection device provided by the present ...

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Abstract

A method for changing the trigger voltage of an electrostatic protection device is disclosed, which includes doping implantation at the drain of the electrostatic protection device; the impurity type of the drain doping implantation is the same or opposite to the impurity type of the drain. The invention also discloses a device for changing the trigger voltage of the electrostatic protection device. The method and device for changing the trigger voltage of the electrostatic protection device provided by the present invention can effectively reduce the trigger voltage, so that the electrostatic protection device can be applied to the electrostatic protection of small-sized and low-voltage circuits. The capacitance of the electrostatic protection device can also be reduced while the trigger voltage is increased, and the electrostatic protection capability of the electrostatic protection device is basically not affected.

Description

technical field [0001] The invention relates to the field of electrostatic protection of electronic devices, in particular to a method and device for changing the trigger voltage of an electrostatic protection device. Background technique [0002] Static electricity exists all the time in nature. When the external environment of the chip or the static charge accumulated inside the chip flows into or out of the chip through the pins of the chip, the instantaneous current (peak value can reach several amperes) or voltage will damage the integrated circuit. circuit, making the chip function invalid. ESD protection is costly to both electronics manufacturers and consumers. When the human body can feel the presence of static electricity, the static electricity generated has reached tens of thousands of volts, which is enough to damage most electronic components. Therefore, the design of qualified electrostatic protection is the due meaning of all industrial electronic devices....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01L27/02H01L29/08
Inventor 姜一波杜寰曾传滨王立新
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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