High area efficiency diode triggered controllable silicon based on two-dimension design
A technology of area efficiency and diodes, applied in thyristors, electrical components, circuits, etc., can solve the problems of low trigger voltage, low maintenance voltage, and low area efficiency, and achieve the effect of simple structure, high trigger voltage, and improved area efficiency
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[0013] The present invention will be further described below in conjunction with the accompanying drawings.
[0014] Such as figure 1 , figure 2 As shown, a high area efficiency diode-triggered thyristor based on two-dimensional design, including P-type substrate 1, N well 2, P well 3, P+ implant region 4, N+ implant region 5, metal 6, shallow trench isolation 7. The cathode 8 and the anode 9, the N well includes a first N well 21 and a second N well 22, the P+ injection region 4 includes a first P+ injection region 41 and a second P+ injection region 42, and the N+ injection region Region 5 includes a first N+ implantation region 51, a second N+ implantation region 52, a third N+ implantation region 53, a fourth N+ implantation region 54, and a fifth N+ implantation region 55, which are sequentially arranged on the P-type substrate 1 along the lateral direction. There are a first N well 21, a P well 3, and a second N well 22; the first N well 21 is provided with a first P+...
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