Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

High-voltage ESD protective circuit

An ESD protection and high-voltage technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of poor anti-noise capability, poor ESD capability, and low trigger voltage of ESD protection circuits, so as to improve ESD capability and avoid malfunction. , Improve the effect of trigger voltage and anti-noise ability

Active Publication Date: 2016-10-19
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned shortcoming of prior art, the purpose of the present invention is to provide a kind of high-voltage ESD protection circuit, is used to solve the ESD ability of ESD protection circuit in the prior art is relatively poor, the trigger voltage at IO PAD place is low, and ESD The anti-noise ability of the protection circuit is poor, which may cause malfunctions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage ESD protective circuit
  • High-voltage ESD protective circuit
  • High-voltage ESD protective circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0046] As an embodiment of the present invention, this embodiment relates to a high-voltage ESD protection circuit, which is used to discharge the ESD current flowing from the IO PAD. Please refer to Figure 2 ~ Figure 4 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a high-voltage ESD protective circuit which is used for discharging ESD current that flows from an IO PAD. The high-voltage ESD protective circuit at least comprises the components of a GDPMOS discharging unit which is arranged between a power supply and the IO PAD; an auxiliary discharging unit which is arranged between the IO PAD and ground and is connected with the GDPMOS discharging unit; and a GGNMOS discharging unit which is connected with the auxiliary discharging unit, wherein the auxiliary discharging unit is used for supplying an auxiliary discharging path of the GGNMOS discharging unit. The auxiliary discharging unit of the invention can supply the auxiliary discharging path of the GGNMOS discharging unit and improves ESD capability. By means of the stacked structure for aiming at high-voltage process, ESD capability of the circuit can be improved, and furthermore triggering voltage and noise resistance of the whole high-voltage ESD protective circuit can be improved, thereby preventing misoperation of the whole high-voltage ESD protective circuit caused by noise.

Description

technical field [0001] The invention relates to the technical field of ESD, in particular to a high-voltage ESD protection circuit. Background technique [0002] The ESD (Electro-Static discharge, electrostatic discharge) phenomenon poses a huge threat to the reliability of integrated circuits, and using on-chip semiconductor devices to form a protection circuit is an important means to improve ESD protection. Existing ESD protection circuits are usually arranged on the IO PAD (input and output pad) of the integrated circuit and the main circuit and at the input port of the power supply voltage. [0003] In high voltage process, common ESD protection circuits such as figure 1 As shown, among them, due to the limitation of the defect of the first high-voltage NMOS transistor HVNMOS1 itself, its ESD capability is lower than that of the first high-voltage PMOS transistor HVPMOS1, which is a short board in the ESD protection circuit, resulting in poor ESD capability of the enti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
Inventor 张辉张国俊周乐
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products